JPH1041518A5 - - Google Patents

Info

Publication number
JPH1041518A5
JPH1041518A5 JP1997090927A JP9092797A JPH1041518A5 JP H1041518 A5 JPH1041518 A5 JP H1041518A5 JP 1997090927 A JP1997090927 A JP 1997090927A JP 9092797 A JP9092797 A JP 9092797A JP H1041518 A5 JPH1041518 A5 JP H1041518A5
Authority
JP
Japan
Prior art keywords
film
insulating film
forming
planarization
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997090927A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1041518A (ja
JP4376323B2 (ja
Filing date
Publication date
Priority claimed from KR1019960010607A external-priority patent/KR970072496A/ko
Priority claimed from KR1019970012306A external-priority patent/KR100234376B1/ko
Application filed filed Critical
Publication of JPH1041518A publication Critical patent/JPH1041518A/ja
Publication of JPH1041518A5 publication Critical patent/JPH1041518A5/ja
Application granted granted Critical
Publication of JP4376323B2 publication Critical patent/JP4376323B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP9092797A 1996-04-09 1997-04-09 表示装置の製造方法 Expired - Fee Related JP4376323B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1019960010607A KR970072496A (ko) 1996-04-09 1996-04-09 박막 트랜지스터(TFT : Thin Film Transistor)제조방법
KR1019970012306A KR100234376B1 (ko) 1996-04-09 1997-04-03 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법
KR97-12306 1997-04-03
KR96-10607 1997-04-03
US08/835,588 US6277678B1 (en) 1996-04-09 1997-04-09 Methods of manufacturing thin film transistors using insulators containing water

Publications (3)

Publication Number Publication Date
JPH1041518A JPH1041518A (ja) 1998-02-13
JPH1041518A5 true JPH1041518A5 (enExample) 2005-03-10
JP4376323B2 JP4376323B2 (ja) 2009-12-02

Family

ID=27349308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9092797A Expired - Fee Related JP4376323B2 (ja) 1996-04-09 1997-04-09 表示装置の製造方法

Country Status (3)

Country Link
US (1) US6277678B1 (enExample)
JP (1) JP4376323B2 (enExample)
KR (1) KR100234376B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3384714B2 (ja) * 1997-07-16 2003-03-10 富士通株式会社 半導体装置およびその製造方法
KR100316271B1 (ko) * 1999-05-27 2001-12-12 구본준, 론 위라하디락사 전계발광소자 및 그의 제조방법
JP2001177097A (ja) * 1999-12-10 2001-06-29 Koninkl Philips Electronics Nv 薄膜トランジスタ及びその製造方法
US6720577B2 (en) * 2000-09-06 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4986351B2 (ja) * 2000-09-06 2012-07-25 株式会社半導体エネルギー研究所 半導体装置
JP4002410B2 (ja) * 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
KR100491142B1 (ko) * 2001-11-20 2005-05-24 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
US6869169B2 (en) 2002-05-15 2005-03-22 Eastman Kodak Company Snap-through thermal actuator
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
JP2007242895A (ja) 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
US8034702B2 (en) 2007-08-16 2011-10-11 Micron Technology, Inc. Methods of forming through substrate interconnects
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433008A (en) * 1982-05-11 1984-02-21 Rca Corporation Doped-oxide diffusion of phosphorus using borophosphosilicate glass
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4628405A (en) * 1985-08-19 1986-12-09 National Semiconductor Corporation Integrated circuit precision capacitor
US4789564A (en) * 1987-03-31 1988-12-06 Union Carbide Corporation Hydridoaminosilane treatment for rendering surfaces water-repellent
US5087581A (en) * 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5376590A (en) * 1992-01-20 1994-12-27 Nippon Telegraph And Telephone Corporation Semiconductor device and method of fabricating the same
US5213986A (en) * 1992-04-10 1993-05-25 North American Philips Corporation Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5304398A (en) * 1993-06-03 1994-04-19 Watkins Johnson Company Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
JP3059915B2 (ja) * 1994-09-29 2000-07-04 三洋電機株式会社 表示装置および表示装置の製造方法
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
JPH10229196A (ja) * 1997-02-13 1998-08-25 Toshiba Corp アクティブマトリクス型表示装置

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