KR100234376B1 - 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법 - Google Patents

박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법 Download PDF

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Publication number
KR100234376B1
KR100234376B1 KR1019970012306A KR19970012306A KR100234376B1 KR 100234376 B1 KR100234376 B1 KR 100234376B1 KR 1019970012306 A KR1019970012306 A KR 1019970012306A KR 19970012306 A KR19970012306 A KR 19970012306A KR 100234376 B1 KR100234376 B1 KR 100234376B1
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South Korea
Prior art keywords
film
thin film
passivation
film transistor
manufacturing
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Expired - Fee Related
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KR1019970012306A
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English (en)
Korean (ko)
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KR970072459A (ko
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이주형
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윤종용
삼성전자주식회사
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Priority claimed from KR1019960010607A external-priority patent/KR970072496A/ko
Application filed by 윤종용, 삼성전자주식회사 filed Critical 윤종용
Priority to KR1019970012306A priority Critical patent/KR100234376B1/ko
Priority to JP9092797A priority patent/JP4376323B2/ja
Priority to US08/835,588 priority patent/US6277678B1/en
Publication of KR970072459A publication Critical patent/KR970072459A/ko
Application granted granted Critical
Publication of KR100234376B1 publication Critical patent/KR100234376B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019970012306A 1996-04-09 1997-04-03 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법 Expired - Fee Related KR100234376B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019970012306A KR100234376B1 (ko) 1996-04-09 1997-04-03 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법
JP9092797A JP4376323B2 (ja) 1996-04-09 1997-04-09 表示装置の製造方法
US08/835,588 US6277678B1 (en) 1996-04-09 1997-04-09 Methods of manufacturing thin film transistors using insulators containing water

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10607 1996-04-09
KR1019960010607 1996-04-09
KR1019960010607A KR970072496A (ko) 1996-04-09 1996-04-09 박막 트랜지스터(TFT : Thin Film Transistor)제조방법
KR1019970012306A KR100234376B1 (ko) 1996-04-09 1997-04-03 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법
US08/835,588 US6277678B1 (en) 1996-04-09 1997-04-09 Methods of manufacturing thin film transistors using insulators containing water

Publications (2)

Publication Number Publication Date
KR970072459A KR970072459A (ko) 1997-11-07
KR100234376B1 true KR100234376B1 (ko) 1999-12-15

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Family Applications (1)

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KR1019970012306A Expired - Fee Related KR100234376B1 (ko) 1996-04-09 1997-04-03 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법

Country Status (3)

Country Link
US (1) US6277678B1 (enExample)
JP (1) JP4376323B2 (enExample)
KR (1) KR100234376B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3384714B2 (ja) * 1997-07-16 2003-03-10 富士通株式会社 半導体装置およびその製造方法
KR100316271B1 (ko) * 1999-05-27 2001-12-12 구본준, 론 위라하디락사 전계발광소자 및 그의 제조방법
JP2001177097A (ja) * 1999-12-10 2001-06-29 Koninkl Philips Electronics Nv 薄膜トランジスタ及びその製造方法
US6720577B2 (en) * 2000-09-06 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4986351B2 (ja) * 2000-09-06 2012-07-25 株式会社半導体エネルギー研究所 半導体装置
JP4002410B2 (ja) * 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
KR100491142B1 (ko) * 2001-11-20 2005-05-24 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
US6869169B2 (en) 2002-05-15 2005-03-22 Eastman Kodak Company Snap-through thermal actuator
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
JP2007242895A (ja) 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
US8034702B2 (en) 2007-08-16 2011-10-11 Micron Technology, Inc. Methods of forming through substrate interconnects
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433008A (en) * 1982-05-11 1984-02-21 Rca Corporation Doped-oxide diffusion of phosphorus using borophosphosilicate glass
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4628405A (en) * 1985-08-19 1986-12-09 National Semiconductor Corporation Integrated circuit precision capacitor
US4789564A (en) * 1987-03-31 1988-12-06 Union Carbide Corporation Hydridoaminosilane treatment for rendering surfaces water-repellent
US5087581A (en) * 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5376590A (en) * 1992-01-20 1994-12-27 Nippon Telegraph And Telephone Corporation Semiconductor device and method of fabricating the same
US5213986A (en) * 1992-04-10 1993-05-25 North American Philips Corporation Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5304398A (en) * 1993-06-03 1994-04-19 Watkins Johnson Company Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
JP3059915B2 (ja) * 1994-09-29 2000-07-04 三洋電機株式会社 表示装置および表示装置の製造方法
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
JPH10229196A (ja) * 1997-02-13 1998-08-25 Toshiba Corp アクティブマトリクス型表示装置

Also Published As

Publication number Publication date
KR970072459A (ko) 1997-11-07
JPH1041518A (ja) 1998-02-13
US6277678B1 (en) 2001-08-21
JP4376323B2 (ja) 2009-12-02

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