JPH10326911A5 - - Google Patents

Info

Publication number
JPH10326911A5
JPH10326911A5 JP1997135406A JP13540697A JPH10326911A5 JP H10326911 A5 JPH10326911 A5 JP H10326911A5 JP 1997135406 A JP1997135406 A JP 1997135406A JP 13540697 A JP13540697 A JP 13540697A JP H10326911 A5 JPH10326911 A5 JP H10326911A5
Authority
JP
Japan
Prior art keywords
magnesium
nitrogen
gallium
group iii
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997135406A
Other languages
English (en)
Japanese (ja)
Other versions
JP3642157B2 (ja
JPH10326911A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP13540697A external-priority patent/JP3642157B2/ja
Priority to JP13540697A priority Critical patent/JP3642157B2/ja
Priority to TW087107841A priority patent/TW387106B/zh
Priority to DE69803721T priority patent/DE69803721T3/de
Priority to EP98109371A priority patent/EP0881666B2/en
Priority to KR1019980018774A priority patent/KR100613814B1/ko
Priority to US09/084,187 priority patent/US6104039A/en
Publication of JPH10326911A publication Critical patent/JPH10326911A/ja
Publication of JPH10326911A5 publication Critical patent/JPH10326911A5/ja
Publication of JP3642157B2 publication Critical patent/JP3642157B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP13540697A 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ Expired - Lifetime JP3642157B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
TW087107841A TW387106B (en) 1997-05-26 1998-05-20 P-type nitrogen compound semiconductor and method of manufacturing same
DE69803721T DE69803721T3 (de) 1997-05-26 1998-05-22 P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung
EP98109371A EP0881666B2 (en) 1997-05-26 1998-05-22 P-type nitrogen compound semiconductor and method of manufacturing same
KR1019980018774A KR100613814B1 (ko) 1997-05-26 1998-05-25 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법
US09/084,187 US6104039A (en) 1997-05-26 1998-05-26 P-type nitrogen compound semiconductor and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2004029739A Division JP2004146852A (ja) 2004-02-05 2004-02-05 ｐ型ＩＩＩ族ナイトライド化合物半導体およびその製造方法
JP2004208283A Division JP2004343137A (ja) 2004-07-15 2004-07-15 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP2004327175A Division JP2005045292A (ja) 2004-11-11 2004-11-11 ｐ型ＩＩＩ族ナイトライド化合物半導体の製造方法、発光ダイオードの製造方法および半導体レーザの製造方法

Publications (3)

Publication Number Publication Date
JPH10326911A JPH10326911A (ja) 1998-12-08
JPH10326911A5 true JPH10326911A5 (enExample) 2005-01-13
JP3642157B2 JP3642157B2 (ja) 2005-04-27

Family

ID=15150989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13540697A Expired - Lifetime JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Country Status (6)

Country Link
US (1) US6104039A (enExample)
EP (1) EP0881666B2 (enExample)
JP (1) JP3642157B2 (enExample)
KR (1) KR100613814B1 (enExample)
DE (1) DE69803721T3 (enExample)
TW (1) TW387106B (enExample)

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PL183687B1 (pl) * 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
JP2000208874A (ja) * 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
JP5095064B2 (ja) * 2000-08-04 2012-12-12 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
JP2004119513A (ja) * 2002-09-24 2004-04-15 Toshiba Corp 半導体装置及びその製造方法
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4519693B2 (ja) * 2005-03-28 2010-08-04 日本電信電話株式会社 窒化物半導体
JP4707712B2 (ja) 2005-04-01 2011-06-22 シャープ株式会社 ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
EP1883119B1 (de) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
KR100925164B1 (ko) 2007-12-13 2009-11-05 서울옵토디바이스주식회사 ｐ형 질화물 반도체층 형성 방법 및 그것을 갖는 발광 소자
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
WO2013157881A1 (ko) * 2012-04-19 2013-10-24 서울반도체 주식회사 반도체 장치 및 이를 제조하는 방법
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
KR101515024B1 (ko) * 2013-10-22 2015-05-04 경북대학교 산학협력단 질화물 반도체 트랜지스터 및 그 제조방법
US9293648B1 (en) 2015-04-15 2016-03-22 Bolb Inc. Light emitter with a conductive transparent p-type layer structure
TWI566430B (zh) * 2015-05-06 2017-01-11 嘉晶電子股份有限公司 氮化物半導體結構
JP6735078B2 (ja) * 2015-09-30 2020-08-05 サンケン電気株式会社 半導体基体及び半導体装置
US9401455B1 (en) 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
US10276746B1 (en) 2017-10-18 2019-04-30 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
JP7181045B2 (ja) * 2018-10-12 2022-11-30 株式会社デンソー 窒化物半導体装置の製造方法
EP3699964B1 (en) 2019-02-22 2023-08-23 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
US10833221B2 (en) 2019-03-06 2020-11-10 Bolb Inc. Heterostructure and light-emitting device employing the same
US10950750B2 (en) 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
US11107951B2 (en) 2019-03-06 2021-08-31 Bolb Inc. Heterostructure for light emitting device or photodetector and light-emitting device employing the same
CN111668351B (zh) * 2019-03-06 2023-05-12 博尔博公司 异质结构以及采用异质结构的发光器件
US10916680B2 (en) 2019-03-06 2021-02-09 Bolb Inc. Heterostructure and light-emitting device employing the same

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Publication number Priority date Publication date Assignee Title
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
JP2809692B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

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