DE69803721T3 - P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung - Google Patents

P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung Download PDF

Info

Publication number
DE69803721T3
DE69803721T3 DE69803721T DE69803721T DE69803721T3 DE 69803721 T3 DE69803721 T3 DE 69803721T3 DE 69803721 T DE69803721 T DE 69803721T DE 69803721 T DE69803721 T DE 69803721T DE 69803721 T3 DE69803721 T3 DE 69803721T3
Authority
DE
Germany
Prior art keywords
layers
magnesium
aluminum
compound semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69803721T
Other languages
German (de)
English (en)
Other versions
DE69803721D1 (de
DE69803721T2 (de
Inventor
Tsunenori Shinagawa-ku Asatsuma
Katsunori Shinagawa-ku Yanashima
Takao Shinagawa-ku Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15150989&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69803721(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69803721D1 publication Critical patent/DE69803721D1/de
Application granted granted Critical
Publication of DE69803721T2 publication Critical patent/DE69803721T2/de
Publication of DE69803721T3 publication Critical patent/DE69803721T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

Landscapes

  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
DE69803721T 1997-05-26 1998-05-22 P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung Expired - Lifetime DE69803721T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP13540697 1997-05-26

Publications (3)

Publication Number Publication Date
DE69803721D1 DE69803721D1 (de) 2002-03-21
DE69803721T2 DE69803721T2 (de) 2002-09-12
DE69803721T3 true DE69803721T3 (de) 2011-06-09

Family

ID=15150989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803721T Expired - Lifetime DE69803721T3 (de) 1997-05-26 1998-05-22 P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung

Country Status (6)

Country Link
US (1) US6104039A (enExample)
EP (1) EP0881666B2 (enExample)
JP (1) JP3642157B2 (enExample)
KR (1) KR100613814B1 (enExample)
DE (1) DE69803721T3 (enExample)
TW (1) TW387106B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL183687B1 (pl) * 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
JP2000208874A (ja) 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
EP2276059A1 (en) * 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
JP2004119513A (ja) 2002-09-24 2004-04-15 Toshiba Corp 半導体装置及びその製造方法
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4519693B2 (ja) * 2005-03-28 2010-08-04 日本電信電話株式会社 窒化物半導体
JP4707712B2 (ja) 2005-04-01 2011-06-22 シャープ株式会社 ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
EP1883119B1 (de) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
KR100925164B1 (ko) 2007-12-13 2009-11-05 서울옵토디바이스주식회사 ｐ형 질화물 반도체층 형성 방법 및 그것을 갖는 발광 소자
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
WO2013157881A1 (ko) * 2012-04-19 2013-10-24 서울반도체 주식회사 반도체 장치 및 이를 제조하는 방법
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
KR101515024B1 (ko) * 2013-10-22 2015-05-04 경북대학교 산학협력단 질화물 반도체 트랜지스터 및 그 제조방법
US9293648B1 (en) 2015-04-15 2016-03-22 Bolb Inc. Light emitter with a conductive transparent p-type layer structure
TWI566430B (zh) * 2015-05-06 2017-01-11 嘉晶電子股份有限公司 氮化物半導體結構
JP6735078B2 (ja) * 2015-09-30 2020-08-05 サンケン電気株式会社 半導体基体及び半導体装置
US9401455B1 (en) 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
US10276746B1 (en) 2017-10-18 2019-04-30 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
JP7181045B2 (ja) * 2018-10-12 2022-11-30 株式会社デンソー 窒化物半導体装置の製造方法
EP3699964B1 (en) 2019-02-22 2023-08-23 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
US10833221B2 (en) 2019-03-06 2020-11-10 Bolb Inc. Heterostructure and light-emitting device employing the same
US11107951B2 (en) 2019-03-06 2021-08-31 Bolb Inc. Heterostructure for light emitting device or photodetector and light-emitting device employing the same
US10950750B2 (en) 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
US10916680B2 (en) 2019-03-06 2021-02-09 Bolb Inc. Heterostructure and light-emitting device employing the same
CN113707775B (zh) * 2019-03-06 2022-06-03 博尔博公司 异质结构以及采用异质结构的发光器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
JP2809692B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

Also Published As

Publication number Publication date
EP0881666B1 (en) 2002-02-06
EP0881666B2 (en) 2010-11-24
TW387106B (en) 2000-04-11
JPH10326911A (ja) 1998-12-08
DE69803721D1 (de) 2002-03-21
EP0881666A3 (en) 1999-08-25
KR100613814B1 (ko) 2006-12-19
US6104039A (en) 2000-08-15
KR19980087334A (ko) 1998-12-05
EP0881666A2 (en) 1998-12-02
DE69803721T2 (de) 2002-09-12
JP3642157B2 (ja) 2005-04-27

Similar Documents

Publication Publication Date Title
DE69803721T3 (de) P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung
DE69227170T3 (de) Verfahren zur Herstellung von Verbundhalbleitern des P-Typs
DE69217903T2 (de) Halbleiteranordnung auf Basis von Gallium-Nitrid und Verfahren zur Herstellung
DE69431333T2 (de) GaN-Einkristall
DE68919408T2 (de) Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes.
DE60121768T2 (de) Verfahren zur herstellung eines halbleiterbauelements mit nitridzusammensetzung der gruppe iii
DE69230260T2 (de) Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung
DE60130461T2 (de) Halbleitervorrichtung aus einer gruppe iii-nitridverbindung
DE10213395B4 (de) Indiumgalliumnitrid-Glättungsstrukturen für III-Nitried-Anordnungen
DE69936564T2 (de) Züchtungsverfahren für einen III-V-Nitridverbindungshalbleiter und Herstellungsverfahren für ein Halbleiterbauelement
DE10213358B4 (de) Licht emittierende III-Nitrid-Anordnung und Verfahren zu deren Herstellung
DE69319854T2 (de) Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE19523158C2 (de) Verfahren zur Herstellung von selbsttragenden Halbleiterschichten aus Al¶x¶Ga¶y¶In¶1¶¶-¶¶x¶¶-¶¶y¶N und Verwendung der Halbleiterschichten
DE69937565T2 (de) P-dotierte zinkoxidschichten und herstellungsverfahren
DE4116563C2 (de) Siliciumcarbid-Leuchtdiode und Verfahren zu ihrer Herstellung
DE19734034C2 (de) Epitaxiewafer für Licht emittierende Vorrichtung, Verfahren zum Bilden des Wafers und den Wafer verwendende, Licht emittierende Vorrichtung
DE69715075T2 (de) Verfahren zum epitaktischen Wachsen einer Halbleiterverbindung in der Dampffase
DE102010012711A1 (de) Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
DE112015000824B4 (de) Verfahren zur Herstellung eines elektronischen Halbleiterchips
DE112006001279T5 (de) Mehrschichtensubstrat eines Nitridhalbleiters der Gruppe 3-5, Verfahren zur Herstellung eines freitragenden Substrats eines Nitridhalbleiters der Gruppe 3-5 und Halbleiterelement
DE112004002804B4 (de) Züchtungsverfahren für eine dünne In-reiche Nitridhalbleiterschicht sowie UV-Lichtemissionsbauteil mit In-reicher Nitridhalbleiterschicht
DE69830788T2 (de) Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche
DE112009001297T5 (de) ALXGA(1-X)AS-Substrat, Epitaxialwafer für Infrarot-LED, Infrarot-LED, Verfahren zur Herstellung eines ALXGA(1-X) AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für eine Infrarot-LED und Verfahren zur Herstellung einer Infrarot-LED
DE112005000296B4 (de) Galliumnitrid-Verbindungshalbleiter-Mehrschichtstruktur, Lampe damit und Herstellungsverfahren dafür
DE19603782A1 (de) III-V Halbleiterstruktur, Verfahren zu ihrer Herstellung und lichtemittierendes Element

Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings