JP3642157B2 - ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ - Google Patents

ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ Download PDF

Info

Publication number
JP3642157B2
JP3642157B2 JP13540697A JP13540697A JP3642157B2 JP 3642157 B2 JP3642157 B2 JP 3642157B2 JP 13540697 A JP13540697 A JP 13540697A JP 13540697 A JP13540697 A JP 13540697A JP 3642157 B2 JP3642157 B2 JP 3642157B2
Authority
JP
Japan
Prior art keywords
layer
group iii
aluminum
magnesium
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13540697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10326911A (ja
JPH10326911A5 (enExample
Inventor
庸紀 朝妻
克典 簗嶋
孝夫 宮嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15150989&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3642157(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13540697A priority Critical patent/JP3642157B2/ja
Priority to TW087107841A priority patent/TW387106B/zh
Priority to DE69803721T priority patent/DE69803721T3/de
Priority to EP98109371A priority patent/EP0881666B2/en
Priority to KR1019980018774A priority patent/KR100613814B1/ko
Priority to US09/084,187 priority patent/US6104039A/en
Publication of JPH10326911A publication Critical patent/JPH10326911A/ja
Publication of JPH10326911A5 publication Critical patent/JPH10326911A5/ja
Publication of JP3642157B2 publication Critical patent/JP3642157B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

Landscapes

  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP13540697A 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ Expired - Lifetime JP3642157B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
TW087107841A TW387106B (en) 1997-05-26 1998-05-20 P-type nitrogen compound semiconductor and method of manufacturing same
DE69803721T DE69803721T3 (de) 1997-05-26 1998-05-22 P-typ Stickstoff-Verbindungshalbleiter und Verfahren zu dessen Herstellung
EP98109371A EP0881666B2 (en) 1997-05-26 1998-05-22 P-type nitrogen compound semiconductor and method of manufacturing same
KR1019980018774A KR100613814B1 (ko) 1997-05-26 1998-05-25 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법
US09/084,187 US6104039A (en) 1997-05-26 1998-05-26 P-type nitrogen compound semiconductor and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2004029739A Division JP2004146852A (ja) 2004-02-05 2004-02-05 ｐ型ＩＩＩ族ナイトライド化合物半導体およびその製造方法
JP2004208283A Division JP2004343137A (ja) 2004-07-15 2004-07-15 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP2004327175A Division JP2005045292A (ja) 2004-11-11 2004-11-11 ｐ型ＩＩＩ族ナイトライド化合物半導体の製造方法、発光ダイオードの製造方法および半導体レーザの製造方法

Publications (3)

Publication Number Publication Date
JPH10326911A JPH10326911A (ja) 1998-12-08
JPH10326911A5 JPH10326911A5 (enExample) 2005-01-13
JP3642157B2 true JP3642157B2 (ja) 2005-04-27

Family

ID=15150989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13540697A Expired - Lifetime JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Country Status (6)

Country Link
US (1) US6104039A (enExample)
EP (1) EP0881666B2 (enExample)
JP (1) JP3642157B2 (enExample)
KR (1) KR100613814B1 (enExample)
DE (1) DE69803721T3 (enExample)
TW (1) TW387106B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186598B2 (en) 2002-09-24 2007-03-06 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
KR100925164B1 (ko) 2007-12-13 2009-11-05 서울옵토디바이스주식회사 ｐ형 질화물 반도체층 형성 방법 및 그것을 갖는 발광 소자

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL183687B1 (pl) * 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
JP2000208874A (ja) * 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
JP5095064B2 (ja) * 2000-08-04 2012-12-12 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4519693B2 (ja) * 2005-03-28 2010-08-04 日本電信電話株式会社 窒化物半導体
JP4707712B2 (ja) 2005-04-01 2011-06-22 シャープ株式会社 ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
EP1883119B1 (de) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
WO2013157881A1 (ko) * 2012-04-19 2013-10-24 서울반도체 주식회사 반도체 장치 및 이를 제조하는 방법
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
KR101515024B1 (ko) * 2013-10-22 2015-05-04 경북대학교 산학협력단 질화물 반도체 트랜지스터 및 그 제조방법
US9293648B1 (en) 2015-04-15 2016-03-22 Bolb Inc. Light emitter with a conductive transparent p-type layer structure
TWI566430B (zh) * 2015-05-06 2017-01-11 嘉晶電子股份有限公司 氮化物半導體結構
JP6735078B2 (ja) * 2015-09-30 2020-08-05 サンケン電気株式会社 半導体基体及び半導体装置
US9401455B1 (en) 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
US10276746B1 (en) 2017-10-18 2019-04-30 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
JP7181045B2 (ja) * 2018-10-12 2022-11-30 株式会社デンソー 窒化物半導体装置の製造方法
EP3699964B1 (en) 2019-02-22 2023-08-23 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
US10833221B2 (en) 2019-03-06 2020-11-10 Bolb Inc. Heterostructure and light-emitting device employing the same
US10950750B2 (en) 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
US11107951B2 (en) 2019-03-06 2021-08-31 Bolb Inc. Heterostructure for light emitting device or photodetector and light-emitting device employing the same
CN111668351B (zh) * 2019-03-06 2023-05-12 博尔博公司 异质结构以及采用异质结构的发光器件
US10916680B2 (en) 2019-03-06 2021-02-09 Bolb Inc. Heterostructure and light-emitting device employing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
JP2809692B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186598B2 (en) 2002-09-24 2007-03-06 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
KR100925164B1 (ko) 2007-12-13 2009-11-05 서울옵토디바이스주식회사 ｐ형 질화물 반도체층 형성 방법 및 그것을 갖는 발광 소자

Also Published As

Publication number Publication date
EP0881666A3 (en) 1999-08-25
KR100613814B1 (ko) 2006-12-19
DE69803721T3 (de) 2011-06-09
TW387106B (en) 2000-04-11
DE69803721D1 (de) 2002-03-21
US6104039A (en) 2000-08-15
JPH10326911A (ja) 1998-12-08
KR19980087334A (ko) 1998-12-05
EP0881666B1 (en) 2002-02-06
EP0881666B2 (en) 2010-11-24
EP0881666A2 (en) 1998-12-02
DE69803721T2 (de) 2002-09-12

Similar Documents

Publication Publication Date Title
JP3642157B2 (ja) ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
US6218269B1 (en) Process for producing III-V nitride pn junctions and p-i-n junctions
US6559038B2 (en) Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6849862B2 (en) III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
CN101311380B (zh) 制造ⅲ-ⅴ族化合物半导体的方法、二极管及其制作方法
KR100692267B1 (ko) Ⅲ족 질화물 반도체 결정의 제조 방법
TW200834670A (en) Process for producing III group nitride compound semiconductor, III group nitride compound semiconductor light emitting element, and lamp
US6476420B2 (en) P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US20020028565A1 (en) Method for growing p-type III-V compound material utilizing HVPE techniques
US6599133B2 (en) Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
JP4618465B2 (ja) ｐ型窒化物系ＩＩＩ−Ｖ族化合物半導体の製造方法および半導体素子の製造方法
US20020030192A1 (en) III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer
US6559467B2 (en) P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US20020017650A1 (en) III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer
JPH08264899A (ja) 窒化ガリウム系半導体の製造方法
Kamp et al. On surface cracking of ammonia for mbe growth of GaN
JP4439400B2 (ja) リン化硼素系半導体発光素子、その製造方法及び発光ダイオード
JPH10290051A (ja) 半導体装置とその製造方法
JP3522610B2 (ja) ｐ型窒化物半導体の製造方法
JP4006537B2 (ja) Ｐ型の窒化物半導体の作製方法
JPH11354458A (ja) ｐ型ＩＩＩ−Ｖ族窒化物半導体およびその製造方法
US7989926B2 (en) Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof
JP2005045292A (ja) ｐ型ＩＩＩ族ナイトライド化合物半導体の製造方法、発光ダイオードの製造方法および半導体レーザの製造方法
JP2004343137A (ja) ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JPH07283436A (ja) ３−５族化合物半導体と発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040216

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20040330

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20040420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040715

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040910

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20041012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041111

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20041122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050105

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050118

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080204

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090204

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100204

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100204

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110204

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110204

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120204

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130204

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130204

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140204

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term