JPH10256521A - ピクセル機能を相互に共用するアクティブピクセル撮像センサおよびその製造方法 - Google Patents

ピクセル機能を相互に共用するアクティブピクセル撮像センサおよびその製造方法

Info

Publication number
JPH10256521A
JPH10256521A JP10042197A JP4219798A JPH10256521A JP H10256521 A JPH10256521 A JP H10256521A JP 10042197 A JP10042197 A JP 10042197A JP 4219798 A JP4219798 A JP 4219798A JP H10256521 A JPH10256521 A JP H10256521A
Authority
JP
Japan
Prior art keywords
pixel
pixels
gate
photodetector
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10042197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256521A5 (https=
Inventor
Robert Michael Guidash
マイケル グイダッシュ ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JPH10256521A publication Critical patent/JPH10256521A/ja
Publication of JPH10256521A5 publication Critical patent/JPH10256521A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10042197A 1997-02-28 1998-02-24 ピクセル機能を相互に共用するアクティブピクセル撮像センサおよびその製造方法 Pending JPH10256521A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/808,444 US6160281A (en) 1997-02-28 1997-02-28 Active pixel sensor with inter-pixel function sharing
US08/808,444 1997-02-28

Publications (2)

Publication Number Publication Date
JPH10256521A true JPH10256521A (ja) 1998-09-25
JPH10256521A5 JPH10256521A5 (https=) 2005-10-27

Family

ID=25198772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10042197A Pending JPH10256521A (ja) 1997-02-28 1998-02-24 ピクセル機能を相互に共用するアクティブピクセル撮像センサおよびその製造方法

Country Status (6)

Country Link
US (2) US6160281A (https=)
EP (1) EP0862219B1 (https=)
JP (1) JPH10256521A (https=)
KR (1) KR100556308B1 (https=)
DE (1) DE69840490D1 (https=)
TW (1) TW392352B (https=)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176163A (ja) * 2000-09-20 2002-06-21 Eastman Kodak Co Ｃｍｏｓアクティブピクセル画像センサ
JP2004508716A (ja) * 2000-08-31 2004-03-18 モトローラ・インコーポレイテッド 画像化デバイスおよび画像化の方法
EP1592066A2 (en) 2004-04-27 2005-11-02 Fujitsu Limited Solid-state image sensor
WO2006025079A1 (ja) * 2004-07-20 2006-03-09 Fujitsu Limited Ｃｍｏｓ撮像素子
JP2006147708A (ja) * 2004-11-17 2006-06-08 Omron Corp 撮像デバイス
JP2007081033A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2007123765A (ja) * 2005-10-31 2007-05-17 Sharp Corp 増幅型固体撮像装置
EP1988704A2 (en) 2007-05-02 2008-11-05 Canon Kabushiki Kaisha Image capturing system, signal processing circuit, and signal processing method
JP2009105309A (ja) * 2007-10-25 2009-05-14 Sumitomo Electric Ind Ltd 受光素子アレイおよび撮像装置
JP2010521812A (ja) * 2007-03-15 2010-06-24 イーストマン コダック カンパニー 画素面積が低減された画像センサ
WO2010074007A1 (ja) * 2008-12-24 2010-07-01 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
US7916195B2 (en) 2006-10-13 2011-03-29 Sony Corporation Solid-state imaging device, imaging apparatus and camera
WO2011105043A1 (ja) * 2010-02-26 2011-09-01 パナソニック株式会社 固体撮像装置およびカメラ
JP2012186404A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 固体撮像装置
WO2012132099A1 (ja) * 2011-03-29 2012-10-04 富士フイルム株式会社 固体撮像素子及び撮像装置
JP2013149742A (ja) * 2012-01-18 2013-08-01 Canon Inc 撮像装置および撮像システム
KR101320784B1 (ko) * 2005-06-01 2013-10-22 옴니비전 테크놀러지즈 인코포레이티드 이미지 센서 및 이를 포함하는 디지털 카메라
JP2014049727A (ja) * 2012-09-04 2014-03-17 Canon Inc 固体撮像装置
JP2014143444A (ja) * 2014-04-25 2014-08-07 Sony Corp 固体撮像装置及び電子機器
US9041854B2 (en) 2010-08-19 2015-05-26 Canon Kabushiki Kaisha Image-pickup apparatus and method of detecting defective pixel thereof
US9111835B2 (en) 2010-01-28 2015-08-18 Sony Corporation Solid-state imaging device and electronic apparatus
JP2017175164A (ja) * 2017-06-12 2017-09-28 ソニー株式会社 固体撮像装置及び電子機器
JP2020028037A (ja) * 2018-08-13 2020-02-20 株式会社東芝 固体撮像装置
JP2023014881A (ja) * 2021-07-19 2023-01-31 テックポイント インク 撮像素子及び撮像装置

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160281A (en) * 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3496918B2 (ja) * 1997-12-26 2004-02-16 キヤノン株式会社 固体撮像装置
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
KR19990084630A (ko) * 1998-05-08 1999-12-06 김영환 씨모스 이미지 센서 및 그 구동 방법
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6734906B1 (en) * 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US7116366B1 (en) * 1999-08-31 2006-10-03 Micron Technology, Inc. CMOS aps pixel sensor dynamic range increase
US6486913B1 (en) * 1999-09-30 2002-11-26 Intel Corporation Pixel array with shared reset circuitry
KR100683396B1 (ko) * 1999-12-28 2007-02-15 매그나칩 반도체 유한회사 이미지센서의 화소어레이 주사 방법
WO2001063905A2 (en) 2000-02-23 2001-08-30 Photobit Corporation Frame shutter pixel with an isolated storage node
US6552322B1 (en) * 2000-05-16 2003-04-22 Micron Technology, Inc. Shared photodetector pixel image sensor
JP2002122887A (ja) * 2000-06-12 2002-04-26 Nec Corp 液晶表示装置及びその製造方法
US6642961B1 (en) * 2000-07-12 2003-11-04 Vanguard International Semiconductor Corp. Method of defective pixel address detection for image sensors having windowing function
US7154546B1 (en) * 2000-08-07 2006-12-26 Micron Technology, Inc. Pixel optimization for color
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
FR2820882B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodetecteur a trois transistors
FR2824665B1 (fr) * 2001-05-09 2004-07-23 St Microelectronics Sa Photodetecteur de type cmos
CN1225897C (zh) * 2002-08-21 2005-11-02 佳能株式会社 摄像装置
US6919551B2 (en) * 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US7375748B2 (en) * 2002-08-29 2008-05-20 Micron Technology, Inc. Differential readout from pixels in CMOS sensor
JP3792628B2 (ja) * 2002-09-02 2006-07-05 富士通株式会社 固体撮像装置及び画像読み出し方法
FR2844398A1 (fr) * 2002-09-11 2004-03-12 St Microelectronics Sa Photodetecteur d'un capteur d'images
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
JP4208559B2 (ja) 2002-12-03 2009-01-14 キヤノン株式会社 光電変換装置
CN100362854C (zh) * 2003-02-13 2008-01-16 松下电器产业株式会社 固体摄像装置、其驱动方法及使用它的照相机
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
KR100523672B1 (ko) * 2003-04-30 2005-10-24 매그나칩 반도체 유한회사 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서
US7332786B2 (en) * 2003-11-26 2008-02-19 Micron Technology, Inc. Anti-blooming storage pixel
US7542085B2 (en) * 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
US20050157194A1 (en) * 2004-01-06 2005-07-21 Altice Peter P.Jr. Imager device with dual storage nodes
US7087883B2 (en) * 2004-02-04 2006-08-08 Omnivision Technologies, Inc. CMOS image sensor using shared transistors between pixels with dual pinned photodiode
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
KR100674908B1 (ko) * 2004-06-01 2007-01-26 삼성전자주식회사 필 팩터가 개선된 ｃｍｏｓ 이미지 소자
JP4971586B2 (ja) 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
JP2006093263A (ja) * 2004-09-22 2006-04-06 Seiko Epson Corp 固体撮像装置及びその駆動方法
US20060125947A1 (en) * 2004-12-09 2006-06-15 Packer Jimmy L Imaging with clustered photosite arrays
KR100690880B1 (ko) * 2004-12-16 2007-03-09 삼성전자주식회사 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
US20060255381A1 (en) * 2005-05-10 2006-11-16 Micron Technology, Inc. Pixel with gate contacts over active region and method of forming same
US7446357B2 (en) * 2005-05-11 2008-11-04 Micron Technology, Inc. Split trunk pixel layout
US7830437B2 (en) * 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
KR100660865B1 (ko) * 2005-06-08 2006-12-26 삼성전자주식회사 이미지 센서에서 공유된 배선/트랜지스터를 가지는 픽셀회로 및 구동 방법
KR100718781B1 (ko) 2005-06-15 2007-05-16 매그나칩 반도체 유한회사 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서
US7449736B2 (en) 2005-07-12 2008-11-11 Micron Technology, Inc. Pixel with transfer gate with no isolation edge
US7728896B2 (en) * 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
US7468532B2 (en) * 2005-07-12 2008-12-23 Aptina Imaging Corporation Method and apparatus providing capacitor on an electrode of an imager photosensor
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
US7511323B2 (en) * 2005-08-11 2009-03-31 Aptina Imaging Corporation Pixel cells in a honeycomb arrangement
US20070040922A1 (en) * 2005-08-22 2007-02-22 Micron Technology, Inc. HDR/AB on multi-way shared pixels
US7804117B2 (en) * 2005-08-24 2010-09-28 Aptina Imaging Corporation Capacitor over red pixel
US7800146B2 (en) * 2005-08-26 2010-09-21 Aptina Imaging Corporation Implanted isolation region for imager pixels
US7244918B2 (en) * 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7714917B2 (en) 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
KR100778854B1 (ko) * 2005-12-29 2007-11-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7602429B2 (en) * 2006-02-01 2009-10-13 Chi Wah Kok Paired differential active pixel sensor
US7667183B2 (en) * 2006-03-10 2010-02-23 Samsung Electronics Co., Ltd. Image sensor with high fill factor pixels and method for forming an image sensor
US7608873B2 (en) * 2006-04-27 2009-10-27 Aptina Imaging Corporation Buried-gated photodiode device and method for configuring and operating same
EP1887626A1 (en) * 2006-08-09 2008-02-13 Tohoku University Optical sensor comprising overflow gate and storage capacitor
US7764315B2 (en) * 2006-08-24 2010-07-27 Dalsa Corporation CMOS imaging facility and a modular array for use in such a facility
US8026966B2 (en) 2006-08-29 2011-09-27 Micron Technology, Inc. Method, apparatus and system providing a storage gate pixel with high dynamic range
US7773138B2 (en) * 2006-09-13 2010-08-10 Tower Semiconductor Ltd. Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme
US8031249B2 (en) 2007-01-11 2011-10-04 Micron Technology, Inc. Missing pixel architecture
EP1971088A1 (en) * 2007-03-12 2008-09-17 Nokia Corporation Release of resources in a communication system
US20080296639A1 (en) * 2007-06-01 2008-12-04 Dalsa Corporation Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device
US8130300B2 (en) 2007-12-20 2012-03-06 Aptina Imaging Corporation Imager method and apparatus having combined select signals
JP4952601B2 (ja) * 2008-02-04 2012-06-13 日本テキサス・インスツルメンツ株式会社 固体撮像装置
US8077236B2 (en) 2008-03-20 2011-12-13 Aptina Imaging Corporation Method and apparatus providing reduced metal routing in imagers
US8031247B2 (en) * 2008-08-20 2011-10-04 Aptina Imaging Corporation Method and apparatus providing an imager with a shared power supply and readout line for pixels
TWI433307B (zh) 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
JP2010199450A (ja) 2009-02-27 2010-09-09 Sony Corp 固体撮像装置の製造方法、固体撮像装置および電子機器
US8405751B2 (en) * 2009-08-03 2013-03-26 International Business Machines Corporation Image sensor pixel structure employing a shared floating diffusion
KR20110050063A (ko) * 2009-11-06 2011-05-13 삼성전자주식회사 픽셀과 이를 포함하는 이미지 처리 장치들
JP2013038174A (ja) * 2011-08-05 2013-02-21 Canon Inc 軟ｘ線検出装置、及び軟ｘ線検出システム
US9210345B2 (en) 2013-02-11 2015-12-08 Tower Semiconductor Ltd. Shared readout low noise global shutter image sensor method
US9160956B2 (en) 2013-02-11 2015-10-13 Tower Semiconductor Ltd. Shared readout low noise global shutter image sensor
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
CN109427287B (zh) * 2017-08-29 2020-12-22 昆山国显光电有限公司 适用于高像素密度的像素驱动电路、像素结构和制作方法
KR102907634B1 (ko) 2021-04-09 2026-01-06 삼성전자주식회사 이미지 센서
CN120239349A (zh) * 2023-12-20 2025-07-01 格科微电子（上海）有限公司 一种图像传感器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0824351B2 (ja) * 1984-04-27 1996-03-06 オリンパス光学工業株式会社 固体撮像装置
JPH0831585B2 (ja) * 1987-04-20 1996-03-27 オリンパス光学工業株式会社 固体撮像装置
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5631704A (en) * 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
JP3031606B2 (ja) * 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
US5587596A (en) * 1995-09-20 1996-12-24 National Semiconductor Corporation Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range
US5608243A (en) * 1995-10-19 1997-03-04 National Semiconductor Corporation Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range
DE69623659T2 (de) * 1996-05-08 2003-05-08 Ifire Technology Inc., Fort Saskatchewan Hochauflösender flacher sensor für strahlungsabbildungssystem
US6160281A (en) * 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004508716A (ja) * 2000-08-31 2004-03-18 モトローラ・インコーポレイテッド 画像化デバイスおよび画像化の方法
JP2002176163A (ja) * 2000-09-20 2002-06-21 Eastman Kodak Co Ｃｍｏｓアクティブピクセル画像センサ
EP1592066A2 (en) 2004-04-27 2005-11-02 Fujitsu Limited Solid-state image sensor
US7557846B2 (en) 2004-04-27 2009-07-07 Fujitsu Microelectronics Limited Solid-state image sensor including common transistors between pixels
EP1976014A2 (en) 2004-07-20 2008-10-01 Fujitsu Limited CMOS imaging device
WO2006025079A1 (ja) * 2004-07-20 2006-03-09 Fujitsu Limited Ｃｍｏｓ撮像素子
US8610177B2 (en) 2004-07-20 2013-12-17 Fujitsu Semiconductor Limited CMOS imaging device having U-shaped device isolation regions
JPWO2006025079A1 (ja) * 2004-07-20 2008-05-08 富士通株式会社 Ｃｍｏｓ撮像素子
JP2006147708A (ja) * 2004-11-17 2006-06-08 Omron Corp 撮像デバイス
KR101320784B1 (ko) * 2005-06-01 2013-10-22 옴니비전 테크놀러지즈 인코포레이티드 이미지 센서 및 이를 포함하는 디지털 카메라
US7595829B2 (en) 2005-09-13 2009-09-29 Panasonic Corporation Solid-state image pickup device
JP2007081033A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2007123765A (ja) * 2005-10-31 2007-05-17 Sharp Corp 増幅型固体撮像装置
US7916195B2 (en) 2006-10-13 2011-03-29 Sony Corporation Solid-state imaging device, imaging apparatus and camera
JP2010521812A (ja) * 2007-03-15 2010-06-24 イーストマン コダック カンパニー 画素面積が低減された画像センサ
EP1988704A2 (en) 2007-05-02 2008-11-05 Canon Kabushiki Kaisha Image capturing system, signal processing circuit, and signal processing method
US8456550B2 (en) 2007-05-02 2013-06-04 Canon Kabushiki Kaisha Image capturing system for correcting signals output from defective pixels
US8072513B2 (en) 2007-05-02 2011-12-06 Canon Kabushiki Kaisha Image capturing system, signal processing circuit, and signal processing method
JP2009105309A (ja) * 2007-10-25 2009-05-14 Sumitomo Electric Ind Ltd 受光素子アレイおよび撮像装置
US8946611B2 (en) 2008-12-24 2015-02-03 Sharp Kabushiki Kaisha Solid-state imaging element and manufacturing method thereof, and electronic information device
JP2010153511A (ja) * 2008-12-24 2010-07-08 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
WO2010074007A1 (ja) * 2008-12-24 2010-07-01 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
US9521350B2 (en) 2010-01-28 2016-12-13 Sony Corporation Solid-state imaging device and electronic apparatus
US11019296B2 (en) 2010-01-28 2021-05-25 Sony Corporation Solid-state imaging device and electronic apparatus
US12047699B2 (en) 2010-01-28 2024-07-23 Sony Group Corporation Light detecting device and electronic apparatus including shared reset and amplification transistors
US11595610B2 (en) 2010-01-28 2023-02-28 Sony Group Corporation Solid-state imaging device and electronic apparatus
US11394914B2 (en) 2010-01-28 2022-07-19 Sony Group Corporation Solid-state imaging device and electronic apparatus including transistors with differently sized gate terminals
US10397509B2 (en) 2010-01-28 2019-08-27 Sony Corporation Solid-state imaging device and electronic apparatus
US9787933B2 (en) 2010-01-28 2017-10-10 Sony Corporation Solid-state imaging device and electronic apparatus
US9270915B2 (en) 2010-01-28 2016-02-23 Sony Corporation Solid-state imaging device and electronic apparatus
US9111834B2 (en) 2010-01-28 2015-08-18 Sony Corporation Solid-state imaging device and electronic apparatus
US9111835B2 (en) 2010-01-28 2015-08-18 Sony Corporation Solid-state imaging device and electronic apparatus
WO2011105043A1 (ja) * 2010-02-26 2011-09-01 パナソニック株式会社 固体撮像装置およびカメラ
JP2011181595A (ja) * 2010-02-26 2011-09-15 Panasonic Corp 固体撮像装置およびカメラ
US9041854B2 (en) 2010-08-19 2015-05-26 Canon Kabushiki Kaisha Image-pickup apparatus and method of detecting defective pixel thereof
JP2012186404A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 固体撮像装置
WO2012132099A1 (ja) * 2011-03-29 2012-10-04 富士フイルム株式会社 固体撮像素子及び撮像装置
JP2012209342A (ja) * 2011-03-29 2012-10-25 Fujifilm Corp 固体撮像素子及び撮像装置
US9143713B2 (en) 2011-03-29 2015-09-22 Fujifilm Corporation Solid-state imaging device and imaging apparatus
US8780244B2 (en) 2012-01-18 2014-07-15 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system
JP2013149742A (ja) * 2012-01-18 2013-08-01 Canon Inc 撮像装置および撮像システム
JP2014049727A (ja) * 2012-09-04 2014-03-17 Canon Inc 固体撮像装置
JP2014143444A (ja) * 2014-04-25 2014-08-07 Sony Corp 固体撮像装置及び電子機器
JP2017175164A (ja) * 2017-06-12 2017-09-28 ソニー株式会社 固体撮像装置及び電子機器
JP2020028037A (ja) * 2018-08-13 2020-02-20 株式会社東芝 固体撮像装置
JP2023014881A (ja) * 2021-07-19 2023-01-31 テックポイント インク 撮像素子及び撮像装置
KR20240032969A (ko) 2021-07-19 2024-03-12 테크포인트 인코포레이티드 촬상 소자 및 촬상 장치
US12538045B2 (en) 2021-07-19 2026-01-27 Techpoint, Inc. Imaging element and imaging device

Also Published As

Publication number Publication date
EP0862219A3 (en) 1999-01-13
EP0862219B1 (en) 2009-01-21
DE69840490D1 (de) 2009-03-12
EP0862219A2 (en) 1998-09-02
KR100556308B1 (ko) 2006-05-25
US6160281A (en) 2000-12-12
KR19980071796A (ko) 1998-10-26
TW392352B (en) 2000-06-01
US6423994B1 (en) 2002-07-23

Similar Documents

Publication Publication Date Title
JPH10256521A (ja) ピクセル機能を相互に共用するアクティブピクセル撮像センサおよびその製造方法
KR100637945B1 (ko) 화상센서및고체화상감지디바이스제조방법
US10586818B2 (en) Solid-state imaging device, camera module and electronic apparatus
JP4401507B2 (ja) 配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ
JP4721380B2 (ja) 固体撮像装置および撮像システム
EP0977426B1 (en) Active pixel sensor with row control busses shared between adjacent pixel rows
CN1941390B (zh) 具有两个半导体层的像素、图像传感器及图像处理系统
US8355069B2 (en) Solid-state image pickup device
US7671314B2 (en) Image sensor including active pixel sensor array with photoelectric conversion region
EP1320993B1 (en) Imager with adjustable resolution
US6900480B2 (en) Solid-state imaging device
US20120007157A1 (en) Image sensor with compact pixel layout
KR19980071795A (ko) 능동 픽셀 이미지 센서 및 능동 픽셀 센서
US6486913B1 (en) Pixel array with shared reset circuitry
KR100820520B1 (ko) 고체촬상장치
JP2018050028A (ja) 固体撮像装置及び電子機器
JP3420144B2 (ja) イメージセンサ及びその製造方法
JP2008060481A (ja) 固体撮像装置
JP2003282859A (ja) 固体撮像素子

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050120

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050804

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070116

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070612