JPH0945890A - オーミック電極構造、半導体装置およびその製造方法 - Google Patents

オーミック電極構造、半導体装置およびその製造方法

Info

Publication number
JPH0945890A
JPH0945890A JP8125159A JP12515996A JPH0945890A JP H0945890 A JPH0945890 A JP H0945890A JP 8125159 A JP8125159 A JP 8125159A JP 12515996 A JP12515996 A JP 12515996A JP H0945890 A JPH0945890 A JP H0945890A
Authority
JP
Japan
Prior art keywords
layer
type
ohmic electrode
semiconductor device
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8125159A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0945890A5 (enExample
Inventor
Mototsugu Yakura
基次 矢倉
Hiroya Sato
浩哉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8125159A priority Critical patent/JPH0945890A/ja
Priority to US08/652,303 priority patent/US6188137B1/en
Publication of JPH0945890A publication Critical patent/JPH0945890A/ja
Publication of JPH0945890A5 publication Critical patent/JPH0945890A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8125159A 1995-05-25 1996-05-20 オーミック電極構造、半導体装置およびその製造方法 Withdrawn JPH0945890A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8125159A JPH0945890A (ja) 1995-05-25 1996-05-20 オーミック電極構造、半導体装置およびその製造方法
US08/652,303 US6188137B1 (en) 1995-05-25 1996-05-23 Ohmic electrode structure, semiconductor device including such ohmic electrode structure, and method for producing such semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-126911 1995-05-25
JP12691195 1995-05-25
JP8125159A JPH0945890A (ja) 1995-05-25 1996-05-20 オーミック電極構造、半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH0945890A true JPH0945890A (ja) 1997-02-14
JPH0945890A5 JPH0945890A5 (enExample) 2004-07-22

Family

ID=26461671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8125159A Withdrawn JPH0945890A (ja) 1995-05-25 1996-05-20 オーミック電極構造、半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US6188137B1 (enExample)
JP (1) JPH0945890A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765242B1 (en) * 2000-04-11 2004-07-20 Sandia Corporation Npn double heterostructure bipolar transistor with ingaasn base region
US6858522B1 (en) * 2000-09-28 2005-02-22 Skyworks Solutions, Inc. Electrical contact for compound semiconductor device and method for forming same
TWI276230B (en) * 2001-12-04 2007-03-11 Epitech Corp Ltd Structure and manufacturing method of light emitting diode
US8569889B1 (en) 2011-02-09 2013-10-29 Nlight Photonics Corporation Nano thick Pt metallization layer
US9214538B2 (en) * 2011-05-16 2015-12-15 Eta Semiconductor Inc. High performance multigate transistor
CN110610991A (zh) * 2019-09-27 2019-12-24 厦门市三安集成电路有限公司 外延结构和低导通电压晶体管
CN112993063B (zh) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 一种光通信芯片欧姆接触电极的制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220966A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置
JPS6010774A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPH01194468A (ja) 1988-01-29 1989-08-04 Fujitsu Ltd オーミック電極構造
JPH0246773A (ja) * 1988-08-09 1990-02-16 Toshiba Corp 化合物半導体装置およびその電極形成方法
JPH03219674A (ja) 1990-01-25 1991-09-27 Toshiba Corp 半導体装置の電極構造及びその製造方法
JPH03239364A (ja) 1990-02-16 1991-10-24 Toshiba Corp 半導体装置の電極構造
JP3093774B2 (ja) * 1990-04-02 2000-10-03 住友電気工業株式会社 電極構造
GB9015871D0 (en) * 1990-07-19 1990-09-05 Secr Defence Ohmic contact for p-type gaas
US5296698A (en) * 1991-02-28 1994-03-22 Sumitomo Electric Industries, Ltd. Lateral photo-sensing device, opt-electronic integrated circuit using the lateral photo-sensing device and photo-logic device using the lateral photo-sensing device
US5280190A (en) * 1991-03-21 1994-01-18 Industrial Technology Research Institute Self aligned emitter/runner integrated circuit
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
JPH06310706A (ja) 1993-04-20 1994-11-04 Fujitsu Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6188137B1 (en) 2001-02-13

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