JPH09321310A5 - - Google Patents

Info

Publication number
JPH09321310A5
JPH09321310A5 JP1996139206A JP13920696A JPH09321310A5 JP H09321310 A5 JPH09321310 A5 JP H09321310A5 JP 1996139206 A JP1996139206 A JP 1996139206A JP 13920696 A JP13920696 A JP 13920696A JP H09321310 A5 JPH09321310 A5 JP H09321310A5
Authority
JP
Japan
Prior art keywords
semiconductor film
region
polycrystalline semiconductor
laser beam
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996139206A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09321310A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13920696A priority Critical patent/JPH09321310A/ja
Priority claimed from JP13920696A external-priority patent/JPH09321310A/ja
Priority to US08/865,476 priority patent/US6429100B2/en
Priority to KR1019970022172A priority patent/KR100510001B1/ko
Priority to EP97303681A priority patent/EP0810639B1/en
Priority to DE69720856T priority patent/DE69720856T2/de
Publication of JPH09321310A publication Critical patent/JPH09321310A/ja
Publication of JPH09321310A5 publication Critical patent/JPH09321310A5/ja
Pending legal-status Critical Current

Links

JP13920696A 1996-05-31 1996-05-31 半導体装置の製造方法 Pending JPH09321310A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法
US08/865,476 US6429100B2 (en) 1996-05-31 1997-05-29 Method of manufacturing a semiconductor device
KR1019970022172A KR100510001B1 (ko) 1996-05-31 1997-05-30 반도체장치의제조방법
EP97303681A EP0810639B1 (en) 1996-05-31 1997-06-02 Laser crystallisation of an amorphous silicon film for a TFT
DE69720856T DE69720856T2 (de) 1996-05-31 1997-06-02 Laserkristallisation eines amorphen Siliziumfilms für einen TFT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH09321310A JPH09321310A (ja) 1997-12-12
JPH09321310A5 true JPH09321310A5 (https=) 2004-07-08

Family

ID=15240021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13920696A Pending JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6429100B2 (https=)
EP (1) EP0810639B1 (https=)
JP (1) JPH09321310A (https=)
KR (1) KR100510001B1 (https=)
DE (1) DE69720856T2 (https=)

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
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JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
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JP4663047B2 (ja) 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP4104800B2 (ja) * 1999-12-08 2008-06-18 三菱電機株式会社 液晶表示装置およびｔｆｔパネル
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
CN1404627A (zh) 2000-10-10 2003-03-19 纽约市哥伦比亚大学托管会 处理薄金属层的方法与设备
US6573163B2 (en) 2001-01-29 2003-06-03 Sharp Laboratories Of America, Inc. Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
JP2001326365A (ja) * 2001-03-27 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置
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US6979605B2 (en) * 2001-11-30 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light
JP2003179068A (ja) * 2001-12-12 2003-06-27 Hitachi Ltd 画像表示装置およびその製造方法
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
EP1326273B1 (en) * 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
KR101006938B1 (ko) * 2002-09-20 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조 시스템 및 발광장치 제작방법
KR100534577B1 (ko) * 2002-11-05 2005-12-07 삼성에스디아이 주식회사 특성이 우수한 디스플레이 디바이스
US6906349B2 (en) * 2003-01-08 2005-06-14 Samsung Electronics Co., Ltd. Polysilicon thin film transistor array panel and manufacturing method thereof
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
KR100956339B1 (ko) * 2003-02-25 2010-05-06 삼성전자주식회사 규소 결정화 시스템 및 규소 결정화 방법
FR2852886A1 (fr) * 2003-03-25 2004-10-01 Secap Cartouche d'impression securisee
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
KR100997971B1 (ko) 2003-11-19 2010-12-02 삼성전자주식회사 결정화용 마스크, 이를 이용한 결정화 방법 및 이를포함하는 박막 트랜지스터 표시판의 제조 방법
JP4686122B2 (ja) * 2003-11-28 2011-05-18 東芝モバイルディスプレイ株式会社 アクティブマトリクス型表示装置及びその製造方法
US7812283B2 (en) 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN100530549C (zh) * 2004-08-23 2009-08-19 株式会社半导体能源研究所 激光照射设备、照射方法和制备半导体器件的方法
EP1805013A1 (en) * 2004-10-29 2007-07-11 3M Innovative Properties Company Optical films incorporating cyclic olefin copolymers
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN101617069B (zh) 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
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US20080135758A1 (en) * 2006-12-06 2008-06-12 Electronics And Telecommunications Research Institute Bolometer and method of manufacturing the same
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
KR20110041107A (ko) 2009-10-15 2011-04-21 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조 방법
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8575043B2 (en) * 2011-07-26 2013-11-05 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
JP5907530B2 (ja) 2012-11-20 2016-04-26 株式会社日本製鋼所 レーザアニール方法およびレーザアニール装置
JP7226767B2 (ja) * 2018-11-02 2023-02-21 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

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JPH09260681A (ja) 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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