JPH09321310A5 - - Google Patents

Info

Publication number
JPH09321310A5
JPH09321310A5 JP1996139206A JP13920696A JPH09321310A5 JP H09321310 A5 JPH09321310 A5 JP H09321310A5 JP 1996139206 A JP1996139206 A JP 1996139206A JP 13920696 A JP13920696 A JP 13920696A JP H09321310 A5 JPH09321310 A5 JP H09321310A5
Authority
JP
Japan
Prior art keywords
semiconductor film
region
polycrystalline semiconductor
laser beam
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996139206A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09321310A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13920696A priority Critical patent/JPH09321310A/ja
Priority claimed from JP13920696A external-priority patent/JPH09321310A/ja
Priority to US08/865,476 priority patent/US6429100B2/en
Priority to KR1019970022172A priority patent/KR100510001B1/ko
Priority to DE69720856T priority patent/DE69720856T2/de
Priority to EP97303681A priority patent/EP0810639B1/en
Publication of JPH09321310A publication Critical patent/JPH09321310A/ja
Publication of JPH09321310A5 publication Critical patent/JPH09321310A5/ja
Pending legal-status Critical Current

Links

JP13920696A 1996-05-31 1996-05-31 半導体装置の製造方法 Pending JPH09321310A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法
US08/865,476 US6429100B2 (en) 1996-05-31 1997-05-29 Method of manufacturing a semiconductor device
KR1019970022172A KR100510001B1 (ko) 1996-05-31 1997-05-30 반도체장치의제조방법
DE69720856T DE69720856T2 (de) 1996-05-31 1997-06-02 Laserkristallisation eines amorphen Siliziumfilms für einen TFT
EP97303681A EP0810639B1 (en) 1996-05-31 1997-06-02 Laser crystallisation of an amorphous silicon film for a TFT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH09321310A JPH09321310A (ja) 1997-12-12
JPH09321310A5 true JPH09321310A5 (https=) 2004-07-08

Family

ID=15240021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13920696A Pending JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6429100B2 (https=)
EP (1) EP0810639B1 (https=)
JP (1) JPH09321310A (https=)
KR (1) KR100510001B1 (https=)
DE (1) DE69720856T2 (https=)

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JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
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JP4663047B2 (ja) 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP4104800B2 (ja) * 1999-12-08 2008-06-18 三菱電機株式会社 液晶表示装置およびｔｆｔパネル
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
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JP2001326365A (ja) * 2001-03-27 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置
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KR100967824B1 (ko) * 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
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JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
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US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
AU2003272222A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
AU2003263609A1 (en) 2002-09-20 2004-04-08 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
KR100534577B1 (ko) * 2002-11-05 2005-12-07 삼성에스디아이 주식회사 특성이 우수한 디스플레이 디바이스
US6906349B2 (en) * 2003-01-08 2005-06-14 Samsung Electronics Co., Ltd. Polysilicon thin film transistor array panel and manufacturing method thereof
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
KR101191837B1 (ko) 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
KR100956339B1 (ko) * 2003-02-25 2010-05-06 삼성전자주식회사 규소 결정화 시스템 및 규소 결정화 방법
FR2852886A1 (fr) * 2003-03-25 2004-10-01 Secap Cartouche d'impression securisee
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
KR100997971B1 (ko) 2003-11-19 2010-12-02 삼성전자주식회사 결정화용 마스크, 이를 이용한 결정화 방법 및 이를포함하는 박막 트랜지스터 표시판의 제조 방법
JP4686122B2 (ja) * 2003-11-28 2011-05-18 東芝モバイルディスプレイ株式会社 アクティブマトリクス型表示装置及びその製造方法
CN100541722C (zh) 2004-03-26 2009-09-16 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2008518280A (ja) * 2004-10-29 2008-05-29 スリーエム イノベイティブ プロパティズ カンパニー 環状オレフィンコポリマーを組み入れた光学フィルム
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US7514714B2 (en) * 2006-02-16 2009-04-07 Stmicroelectronics, Inc. Thin film power MOS transistor, apparatus, and method
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US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
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US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
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JPH09260681A (ja) 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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