JPH09321310A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH09321310A
JPH09321310A JP13920696A JP13920696A JPH09321310A JP H09321310 A JPH09321310 A JP H09321310A JP 13920696 A JP13920696 A JP 13920696A JP 13920696 A JP13920696 A JP 13920696A JP H09321310 A JPH09321310 A JP H09321310A
Authority
JP
Japan
Prior art keywords
region
line
substrate
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13920696A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09321310A5 (https=
Inventor
Kiyoshi Yoneda
清 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP13920696A priority Critical patent/JPH09321310A/ja
Priority to US08/865,476 priority patent/US6429100B2/en
Priority to KR1019970022172A priority patent/KR100510001B1/ko
Priority to EP97303681A priority patent/EP0810639B1/en
Priority to DE69720856T priority patent/DE69720856T2/de
Publication of JPH09321310A publication Critical patent/JPH09321310A/ja
Publication of JPH09321310A5 publication Critical patent/JPH09321310A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP13920696A 1996-05-31 1996-05-31 半導体装置の製造方法 Pending JPH09321310A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法
US08/865,476 US6429100B2 (en) 1996-05-31 1997-05-29 Method of manufacturing a semiconductor device
KR1019970022172A KR100510001B1 (ko) 1996-05-31 1997-05-30 반도체장치의제조방법
EP97303681A EP0810639B1 (en) 1996-05-31 1997-06-02 Laser crystallisation of an amorphous silicon film for a TFT
DE69720856T DE69720856T2 (de) 1996-05-31 1997-06-02 Laserkristallisation eines amorphen Siliziumfilms für einen TFT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13920696A JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH09321310A true JPH09321310A (ja) 1997-12-12
JPH09321310A5 JPH09321310A5 (https=) 2004-07-08

Family

ID=15240021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13920696A Pending JPH09321310A (ja) 1996-05-31 1996-05-31 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6429100B2 (https=)
EP (1) EP0810639B1 (https=)
JP (1) JPH09321310A (https=)
KR (1) KR100510001B1 (https=)
DE (1) DE69720856T2 (https=)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
JP2000243968A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2001326365A (ja) * 2001-03-27 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置
WO2003043093A1 (en) * 2001-11-14 2003-05-22 Samsung Electronics Co., Ltd. A mask for crystallizing polysilicon and a method for forming thin film transistor using the mask
KR100393949B1 (ko) * 1994-12-16 2003-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 액티브 매트릭스 디스플레이 장치
KR100406614B1 (ko) * 1999-12-08 2003-11-21 미쓰비시덴키 가부시키가이샤 액정 표시 장치 및 ｔｆｔ 패널
WO2004028214A1 (en) * 2002-09-20 2004-04-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
JP2004213027A (ja) * 2003-01-08 2004-07-29 Samsung Electronics Co Ltd 多結晶シリコン薄膜トランジスタ表示板及びその製造方法
JP2005164741A (ja) * 2003-11-28 2005-06-23 Toshiba Matsushita Display Technology Co Ltd アクティブマトリクス型表示装置及びその製造方法
KR100523302B1 (ko) * 1997-09-12 2005-12-21 산요덴키가부시키가이샤 펄스 레이저에 의한 어닐을 실시한 반도체 소자를 갖는반도체 장치 및 표시 장치
CN100335956C (zh) * 2001-12-12 2007-09-05 株式会社日立制作所 图像显示装置
US7691545B2 (en) 2003-11-19 2010-04-06 Samsung Electronics Co., Ltd. Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor
US8278659B2 (en) 1996-05-28 2012-10-02 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US8411713B2 (en) 2002-08-19 2013-04-02 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US8502809B2 (en) 2009-10-15 2013-08-06 Samsung Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
KR20150087195A (ko) 2012-11-20 2015-07-29 가부시끼가이샤 니혼 세이꼬쇼 레이저 어닐링 방법 및 레이저 어닐링 장치
JP2020072227A (ja) * 2018-11-02 2020-05-07 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

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JP4663047B2 (ja) 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
CN1404627A (zh) 2000-10-10 2003-03-19 纽约市哥伦比亚大学托管会 处理薄金属层的方法与设备
US6573163B2 (en) 2001-01-29 2003-06-03 Sharp Laboratories Of America, Inc. Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
SG120880A1 (en) * 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7103576B2 (en) * 2001-09-21 2006-09-05 First Usa Bank, Na System for providing cardless payment
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EP1326273B1 (en) * 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
KR100534577B1 (ko) * 2002-11-05 2005-12-07 삼성에스디아이 주식회사 특성이 우수한 디스플레이 디바이스
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
KR100956339B1 (ko) * 2003-02-25 2010-05-06 삼성전자주식회사 규소 결정화 시스템 및 규소 결정화 방법
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US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7812283B2 (en) 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN100530549C (zh) * 2004-08-23 2009-08-19 株式会社半导体能源研究所 激光照射设备、照射方法和制备半导体器件的方法
EP1805013A1 (en) * 2004-10-29 2007-07-11 3M Innovative Properties Company Optical films incorporating cyclic olefin copolymers
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN101617069B (zh) 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
US7514714B2 (en) * 2006-02-16 2009-04-07 Stmicroelectronics, Inc. Thin film power MOS transistor, apparatus, and method
US20080135758A1 (en) * 2006-12-06 2008-06-12 Electronics And Telecommunications Research Institute Bolometer and method of manufacturing the same
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
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TW280037B (en) 1994-04-22 1996-07-01 Handotai Energy Kenkyusho Kk Drive circuit of active matrix type display device and manufacturing method
JP3025408B2 (ja) * 1994-06-20 2000-03-27 シャープ株式会社 半導体素子の製造方法
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JPH09260681A (ja) 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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US8278659B2 (en) 1996-05-28 2012-10-02 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
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JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
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KR100406614B1 (ko) * 1999-12-08 2003-11-21 미쓰비시덴키 가부시키가이샤 액정 표시 장치 및 ｔｆｔ 패널
JP2001326365A (ja) * 2001-03-27 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置
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US7781765B2 (en) 2001-11-14 2010-08-24 Samsung Electronics Co., Ltd. Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask
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US8411713B2 (en) 2002-08-19 2013-04-02 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
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JP2004213027A (ja) * 2003-01-08 2004-07-29 Samsung Electronics Co Ltd 多結晶シリコン薄膜トランジスタ表示板及びその製造方法
US7691545B2 (en) 2003-11-19 2010-04-06 Samsung Electronics Co., Ltd. Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor
JP2005164741A (ja) * 2003-11-28 2005-06-23 Toshiba Matsushita Display Technology Co Ltd アクティブマトリクス型表示装置及びその製造方法
US8502809B2 (en) 2009-10-15 2013-08-06 Samsung Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
US8673674B2 (en) 2009-10-15 2014-03-18 Samsung Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
KR20150087195A (ko) 2012-11-20 2015-07-29 가부시끼가이샤 니혼 세이꼬쇼 레이저 어닐링 방법 및 레이저 어닐링 장치
JP2020072227A (ja) * 2018-11-02 2020-05-07 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法
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EP0810639A2 (en) 1997-12-03
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KR100510001B1 (ko) 2005-11-03
US6429100B2 (en) 2002-08-06
US20020001888A1 (en) 2002-01-03
EP0810639A3 (en) 1999-07-28
DE69720856D1 (de) 2003-05-22

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