KR910016046A - 반도체 장치 제조방법 - Google Patents

반도체 장치 제조방법 Download PDF

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Publication number
KR910016046A
KR910016046A KR1019910002183A KR910002183A KR910016046A KR 910016046 A KR910016046 A KR 910016046A KR 1019910002183 A KR1019910002183 A KR 1019910002183A KR 910002183 A KR910002183 A KR 910002183A KR 910016046 A KR910016046 A KR 910016046A
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South Korea
Prior art keywords
opening
layer
silicon oxide
oxide layer
silicon
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KR1019910002183A
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English (en)
Inventor
요하네스 요셉 테우니센 마티아스
마리아 람베르티나 물데르 요하나
하시마 얀
페트루스 마리아 루텐 빌헬무스
Original Assignee
프레데릭 얀 스미트
엔. 브이. 필립스 글로아이람펜 파브리켄
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Publication of KR910016046A publication Critical patent/KR910016046A/ko

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/154—Solid phase epitaxy

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  • Microelectronics & Electronic Packaging (AREA)
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  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

내용 없음

Description

반도체 장치 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 본 발명의 방법에 의한 제조단계 중에 있는 반도체 장치의 일부분에 대한 개략적인 단면도.

Claims (6)

  1. 단결정 실리콘 기재 상의 제1실리콘 산화물층 상에 제공되며 상기 제1실리콘 산화물층의 개구를 통해 상기 실리콘 기재와 접촉하는 제1다결정 또는 비정질 실리콘층이 상기 개구에 열을 집중시키는 열집중 수단의 면전에서 열처리에 의해 적어도 상기 개구에서 단결정층으로 변환하게 하는 반도체 장치 제조방법에 있어서, 상기 제1다결정 또는 비정질 실리콘층에 상기 열집중 수단을 제2실리콘 산화물층, 제2다결정 또는 비정질 실리콘층 및 피복층의 형태로 제공하고; 상기 제1실리콘 산화물층의 상기 개구의 상측에 위치하는 상기 제2실리콘 산화물층 부분의 두께를 상기 제2실리콘 산화물층의 나머지 부분의 두께 보다 얇게 하고; 열처리 후에 변환된 상기 제1실리콘층에 회로소자를 제공하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 개구를 길고 좁은 흠의 형상으로 한 것을 특징으로 하는 방법.
  3. 제2항에 있어서, 상기 개구를 그의 길이 방향에서 단절시킨 것을 특징으로 하는 방법.
  4. 제2항 또는 3항에 있어서, 상기 홈의 방향을 〔100〕 또는 〔110〕방향으로 선택한 것을 특징으로 하는 방법.
  5. 제2 내지 4항 중의 어느 한 항에 있어서, 상기 열처리를 레이저에 의해 수행하되 용융 스폿을 상기 홈의 방향으로 변위시키면서 수행하는 것을 특징으로 하는 방법.
  6. 제5항에 있어서, 상기 레이저는 연속파 이산화 탄소 레이저인 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002183A 1990-02-12 1991-02-08 반도체 장치 제조방법 KR910016046A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9000324 1990-02-12
NL9000324A NL9000324A (nl) 1990-02-12 1990-02-12 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
KR910016046A true KR910016046A (ko) 1991-09-30

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ID=19856575

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Application Number Title Priority Date Filing Date
KR1019910002183A KR910016046A (ko) 1990-02-12 1991-02-08 반도체 장치 제조방법

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US (1) US5057452A (ko)
EP (1) EP0442565A1 (ko)
JP (1) JPH04214615A (ko)
KR (1) KR910016046A (ko)
NL (1) NL9000324A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2682128B1 (fr) * 1991-10-08 1993-12-03 Thomson Csf Procede de croissance de couches heteroepitaxiales.
US5436197A (en) * 1993-09-07 1995-07-25 Motorola, Inc. Method of manufacturing a bonding pad structure
DE102013109163B4 (de) 2013-08-23 2022-05-12 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung polykristalliner, 3D-Strukturen aufweisender Siliziumschichten gleichmäßiger Dicke

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
JPS6054277B2 (ja) * 1981-08-08 1985-11-29 富士通株式会社 非単結晶半導体層の単結晶化方法
JPS59108313A (ja) * 1982-12-13 1984-06-22 Mitsubishi Electric Corp 半導体単結晶層の製造方法
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法
JPH084067B2 (ja) * 1985-10-07 1996-01-17 工業技術院長 半導体装置の製造方法
JPS62160712A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol 半導体装置の製造方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process

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Publication number Publication date
JPH04214615A (ja) 1992-08-05
US5057452A (en) 1991-10-15
EP0442565A1 (en) 1991-08-21
NL9000324A (nl) 1991-09-02

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