TW344128B - Process for producing semiconductor device - Google Patents
Process for producing semiconductor deviceInfo
- Publication number
- TW344128B TW344128B TW084110912A TW84110912A TW344128B TW 344128 B TW344128 B TW 344128B TW 084110912 A TW084110912 A TW 084110912A TW 84110912 A TW84110912 A TW 84110912A TW 344128 B TW344128 B TW 344128B
- Authority
- TW
- Taiwan
- Prior art keywords
- semi
- transparent film
- semiconductor device
- film
- amorphous silicon
- Prior art date
Links
Abstract
A process for producing a semiconductor device, which comprises the following steps: forming an amorphous silicon film; forming a semi-transparent film on a portion of the amorphous silicon film, the semi-transparent film containing metal elements promoting the silicon crystallization; thermally treating the region formed with the semi-transparent film thereby selectively crystallizing the amorphous silicon film; applying a laser on at least a portion of the region formed with the semi-transparent film and at least a portion of the region not formed with the semi-transparent film.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28140894 | 1994-10-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW344128B true TW344128B (en) | 1998-11-01 |
Family
ID=17638741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084110912A TW344128B (en) | 1994-10-20 | 1995-10-17 | Process for producing semiconductor device |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100271082B1 (en) |
CN (1) | CN1149632C (en) |
TW (1) | TW344128B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
CN1331194C (en) * | 2004-06-30 | 2007-08-08 | 吉林大学 | A method for making metal induced polysilicon film having diffuse layer above metal |
KR100721555B1 (en) | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | Bottom gate thin film transistor and method fabricating thereof |
WO2011105830A2 (en) * | 2010-02-26 | 2011-09-01 | 주식회사 테라세미콘 | Method for producing a polycrystalline silicon layer, and apparatus for forming a metal mixed layer for same |
KR101120045B1 (en) * | 2010-02-26 | 2012-03-22 | 주식회사 테라세미콘 | Method for manufacturing poly crystalline silicon layer |
-
1995
- 1995-10-17 TW TW084110912A patent/TW344128B/en not_active IP Right Cessation
- 1995-10-20 KR KR1019950036493A patent/KR100271082B1/en not_active IP Right Cessation
- 1995-10-20 CN CNB951205048A patent/CN1149632C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1149632C (en) | 2004-05-12 |
KR100271082B1 (en) | 2000-11-01 |
CN1133489A (en) | 1996-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |