TW344128B - Process for producing semiconductor device - Google Patents

Process for producing semiconductor device

Info

Publication number
TW344128B
TW344128B TW084110912A TW84110912A TW344128B TW 344128 B TW344128 B TW 344128B TW 084110912 A TW084110912 A TW 084110912A TW 84110912 A TW84110912 A TW 84110912A TW 344128 B TW344128 B TW 344128B
Authority
TW
Taiwan
Prior art keywords
semi
transparent film
semiconductor device
film
amorphous silicon
Prior art date
Application number
TW084110912A
Other languages
Chinese (zh)
Inventor
Hisashi Otani
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW344128B publication Critical patent/TW344128B/en

Links

Abstract

A process for producing a semiconductor device, which comprises the following steps: forming an amorphous silicon film; forming a semi-transparent film on a portion of the amorphous silicon film, the semi-transparent film containing metal elements promoting the silicon crystallization; thermally treating the region formed with the semi-transparent film thereby selectively crystallizing the amorphous silicon film; applying a laser on at least a portion of the region formed with the semi-transparent film and at least a portion of the region not formed with the semi-transparent film.
TW084110912A 1994-10-20 1995-10-17 Process for producing semiconductor device TW344128B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28140894 1994-10-20

Publications (1)

Publication Number Publication Date
TW344128B true TW344128B (en) 1998-11-01

Family

ID=17638741

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084110912A TW344128B (en) 1994-10-20 1995-10-17 Process for producing semiconductor device

Country Status (3)

Country Link
KR (1) KR100271082B1 (en)
CN (1) CN1149632C (en)
TW (1) TW344128B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
CN1331194C (en) * 2004-06-30 2007-08-08 吉林大学 A method for making metal induced polysilicon film having diffuse layer above metal
KR100721555B1 (en) 2004-08-13 2007-05-23 삼성에스디아이 주식회사 Bottom gate thin film transistor and method fabricating thereof
WO2011105830A2 (en) * 2010-02-26 2011-09-01 주식회사 테라세미콘 Method for producing a polycrystalline silicon layer, and apparatus for forming a metal mixed layer for same
KR101120045B1 (en) * 2010-02-26 2012-03-22 주식회사 테라세미콘 Method for manufacturing poly crystalline silicon layer

Also Published As

Publication number Publication date
CN1149632C (en) 2004-05-12
KR100271082B1 (en) 2000-11-01
CN1133489A (en) 1996-10-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees