JPH09172229A5 - - Google Patents

Info

Publication number
JPH09172229A5
JPH09172229A5 JP1996315844A JP31584496A JPH09172229A5 JP H09172229 A5 JPH09172229 A5 JP H09172229A5 JP 1996315844 A JP1996315844 A JP 1996315844A JP 31584496 A JP31584496 A JP 31584496A JP H09172229 A5 JPH09172229 A5 JP H09172229A5
Authority
JP
Japan
Prior art keywords
vertical
emitting laser
cavity surface
laser diode
distributed bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP1996315844A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09172229A (ja
Filing date
Publication date
Priority claimed from US08/565,537 external-priority patent/US5724376A/en
Application filed filed Critical
Publication of JPH09172229A publication Critical patent/JPH09172229A/ja
Publication of JPH09172229A5 publication Critical patent/JPH09172229A5/ja
Ceased legal-status Critical Current

Links

JP31584496A 1995-11-30 1996-11-27 半導体ウェーハ・ボンディングによって製造された透明基板垂直共振型面発光レーザ Ceased JPH09172229A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US565,537 1995-11-30
US08/565,537 US5724376A (en) 1995-11-30 1995-11-30 Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding

Publications (2)

Publication Number Publication Date
JPH09172229A JPH09172229A (ja) 1997-06-30
JPH09172229A5 true JPH09172229A5 (enExample) 2004-11-18

Family

ID=24259060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31584496A Ceased JPH09172229A (ja) 1995-11-30 1996-11-27 半導体ウェーハ・ボンディングによって製造された透明基板垂直共振型面発光レーザ

Country Status (4)

Country Link
US (2) US5724376A (enExample)
JP (1) JPH09172229A (enExample)
DE (1) DE19646015A1 (enExample)
GB (1) GB2307791B (enExample)

Families Citing this family (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167877A (ja) * 1995-12-15 1997-06-24 Furukawa Electric Co Ltd:The 半導体レーザ装置及びその製造方法
US5977604A (en) * 1996-03-08 1999-11-02 The Regents Of The University Of California Buried layer in a semiconductor formed by bonding
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5835517A (en) * 1996-10-04 1998-11-10 W. L. Gore & Associates, Inc. WDM multiplexer-demultiplexer using Fabry-Perot filter array
US5838707A (en) * 1996-12-27 1998-11-17 Motorola, Inc. Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
WO1998048492A1 (en) * 1997-04-23 1998-10-29 Honeywell Inc. Electronic devices formed from pre-patterned structures that are bonded
CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6022760A (en) * 1997-07-30 2000-02-08 Motorola, Inc. Integrated electro-optical package and method of fabrication
JPH11154774A (ja) * 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
US6021146A (en) * 1997-09-15 2000-02-01 Motorola, Inc. Vertical cavity surface emitting laser for high power single mode operation and method of fabrication
EP2169733B1 (de) * 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US6633120B2 (en) * 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
DE19807782A1 (de) * 1998-02-18 1999-09-02 Siemens Ag Bauelement mit einem Lichtsender und einem Lichtempfänger
US6301281B1 (en) 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US6816528B1 (en) * 1998-12-30 2004-11-09 Xerox Corporation Method and structure for nitride based laser diode arrays on a conducting substrate
US6204189B1 (en) 1999-01-29 2001-03-20 The Regents Of The University Of California Fabrication of precision high quality facets on molecular beam epitaxy material
GB2346258A (en) * 1999-01-30 2000-08-02 Mitel Semiconductor Ab Monitoring the light output of surface emitting lasers
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6280523B1 (en) 1999-02-05 2001-08-28 Lumileds Lighting, U.S., Llc Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
GB2349740A (en) * 1999-05-05 2000-11-08 Mitel Semiconductor Ab Vertical cavity surface emitting laser with monitoring diode
EP1226612A4 (en) * 1999-05-06 2007-01-24 Univ Boston REFLECTIVE LAYER BURIED IN SILICON AND METHOD FOR MANUFACTURING SAME
JP3728147B2 (ja) * 1999-07-16 2005-12-21 キヤノン株式会社 光電気混載配線基板
JP2001141924A (ja) * 1999-11-16 2001-05-25 Matsushita Electric Ind Co Ltd 分波素子及び分波受光素子
DE19959182A1 (de) * 1999-12-08 2001-06-28 Max Planck Gesellschaft Verfahren zum Herstellen eines optoelektronischen Bauelements
US6778582B1 (en) * 2000-03-06 2004-08-17 Novalux, Inc. Coupled cavity high power semiconductor laser
US20060029120A1 (en) * 2000-03-06 2006-02-09 Novalux Inc. Coupled cavity high power semiconductor laser
US6335263B1 (en) * 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
US6420732B1 (en) 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
JP3538602B2 (ja) * 2000-06-28 2004-06-14 シャープ株式会社 半導体レーザー装置の製造方法および半導体レーザー装置の製造装置
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP2002141556A (ja) * 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6711203B1 (en) * 2000-09-22 2004-03-23 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
TW474034B (en) * 2000-11-07 2002-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
DE10102458A1 (de) * 2001-01-15 2002-07-25 Infineon Technologies Ag Vertikallaserdiode mit ausbleichbarem Absorbermittel
TW493286B (en) * 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US6882669B2 (en) * 2001-02-10 2005-04-19 Zhijiang Hang High-power surface emitting laser and fabrication methods thereof
US6589805B2 (en) 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US6987613B2 (en) 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6785052B2 (en) * 2001-05-21 2004-08-31 Jds Uniphase Corporation Stress free and thermally stabilized dielectric fiber
US6636539B2 (en) * 2001-05-25 2003-10-21 Novalux, Inc. Method and apparatus for controlling thermal variations in an optical device
US7010012B2 (en) * 2001-07-26 2006-03-07 Applied Optoelectronics, Inc. Method and apparatus for reducing specular reflections in semiconductor lasers
US6692979B2 (en) * 2001-08-13 2004-02-17 Optoic Technology, Inc. Methods of fabricating optoelectronic IC modules
US6674948B2 (en) 2001-08-13 2004-01-06 Optoic Technology, Inc. Optoelectronic IC module
US6656756B2 (en) * 2001-08-24 2003-12-02 Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. Technique for a surface-emitting laser diode with a metal reflector
US7501303B2 (en) * 2001-11-05 2009-03-10 The Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
DE10201102A1 (de) * 2002-01-09 2003-07-24 Infineon Technologies Ag Laservorrichtung
US6773532B2 (en) * 2002-02-27 2004-08-10 Jds Uniphase Corporation Method for improving heat dissipation in optical transmitter
US6658041B2 (en) * 2002-03-20 2003-12-02 Agilent Technologies, Inc. Wafer bonded vertical cavity surface emitting laser systems
US6829264B2 (en) * 2002-05-10 2004-12-07 Intel Corporation Laser frequency aging compensation
AU2003256382A1 (en) * 2002-07-06 2004-01-23 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel
JP3941713B2 (ja) * 2003-03-11 2007-07-04 セイコーエプソン株式会社 面発光レーザを備えた半導体集積回路、半導体集積回路の製造方法および電子機器
JP2004281559A (ja) * 2003-03-13 2004-10-07 Toshiba Corp 半導体発光素子
KR100678407B1 (ko) * 2003-03-18 2007-02-02 크리스탈 포토닉스, 인코포레이티드 Ⅲ족 질화물 장치를 제조하는 방법과 이 방법으로 제조된장치
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
WO2005067113A1 (ja) * 2004-01-07 2005-07-21 Hamamatsu Photonics K.K. 半導体発光素子及びその製造方法
EP1569263B1 (de) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
DE102004040077A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung
JP4507715B2 (ja) * 2004-06-21 2010-07-21 株式会社リコー 面型光スイッチ及びそれを用いた光通信システム
US8728937B2 (en) * 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
WO2006012838A2 (de) * 2004-07-30 2006-02-09 Osram Opto Semiconductors Gmbh Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
US7322704B2 (en) * 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
DE102005036820A1 (de) * 2004-08-31 2006-03-09 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper für einen vertikal emittierenden Laser und Verfahren zu dessen Herstellung
US7330319B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US20060091414A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J LED package with front surface heat extractor
US20060091411A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
CN100383989C (zh) * 2004-11-23 2008-04-23 北京大学 在金属热沉上的激光剥离功率型led芯片及其制备方法
KR100627703B1 (ko) * 2004-12-14 2006-09-26 한국전자통신연구원 하이브리드 금속접합 표면방출 레이저 및 그 제작 방법
KR100689501B1 (ko) * 2005-02-03 2007-03-02 삼성전자주식회사 광대역 반도체 광소자
KR100634538B1 (ko) 2005-02-05 2006-10-13 삼성전자주식회사 효율적인 냉각 구조를 갖는 반도체 발광 소자 및 그 제조방법
US8000374B2 (en) * 2005-04-20 2011-08-16 Finisar Corporation Surface gratings on VCSELs for polarization pinning
US7526009B2 (en) * 2005-05-07 2009-04-28 Samsung Electronics Co., Ltd. End-pumped vertical external cavity surface emitting laser
US20070147458A1 (en) * 2005-06-10 2007-06-28 Novalux, Inc. Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities
CN101258652B (zh) 2005-09-02 2010-11-17 国立大学法人京都大学 二维光子晶体面发光激光光源
DE102006023685A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7547925B2 (en) * 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
US7390117B2 (en) * 2006-05-02 2008-06-24 3M Innovative Properties Company LED package with compound converging optical element
US7953293B2 (en) * 2006-05-02 2011-05-31 Ati Technologies Ulc Field sequence detector, method and video device
US20070258241A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with non-bonded converging optical element
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US7525126B2 (en) 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
WO2008011377A2 (en) * 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
JP2008028120A (ja) * 2006-07-20 2008-02-07 Sumitomo Electric Ind Ltd 面発光型半導体素子
TW200834969A (en) * 2007-02-13 2008-08-16 Epistar Corp Light-emitting diode and method for manufacturing the same
JP4927178B2 (ja) * 2007-03-16 2012-05-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 垂直外部共振器形面発光レーザ、及び、その発光部品を製造する方法
DE102007029391A1 (de) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
CN106449805B (zh) 2009-02-09 2019-03-12 艾克斯瑟乐普林特有限公司 集中器型光电(cpv)模块、接收器和子接收器及其形成方法
CN101582480B (zh) * 2009-05-08 2011-06-22 华灿光电股份有限公司 带热沉的led芯片及其制造方法
US8559127B2 (en) 2010-12-22 2013-10-15 Seagate Technology Llc Integrated heat assisted magnetic recording head with extended cavity vertical cavity surface emitting laser diode
JP5659903B2 (ja) * 2011-03-29 2015-01-28 ソニー株式会社 発光素子・受光素子組立体及びその製造方法
JP5729147B2 (ja) * 2011-06-06 2015-06-03 株式会社デンソー 面発光レーザ素子の製造方法
US8451695B2 (en) 2011-06-23 2013-05-28 Seagate Technology Llc Vertical cavity surface emitting laser with integrated mirror and waveguide
CN102569031A (zh) * 2011-07-07 2012-07-11 杨继远 一种用铟(In)进行外延片/硅片键合的方法
JP2013161965A (ja) * 2012-02-06 2013-08-19 Kyoto Univ 半導体発光素子
TWI568016B (zh) * 2014-12-23 2017-01-21 錼創科技股份有限公司 半導體發光元件
US20160226223A1 (en) * 2015-01-30 2016-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd VCSEL Packaging and VCSEL Array Configurations
EP3352313B1 (en) * 2015-09-15 2023-11-15 Sony Group Corporation Surface light-emitting laser
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
TWI609540B (zh) 2016-07-18 2017-12-21 可提升使用效能的面射型雷射
US10193301B2 (en) * 2017-03-31 2019-01-29 Nichia Corporation Method of manufacturing light emitting device and light emitting device
DE102018130562A1 (de) * 2018-11-30 2020-06-04 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiter-bauelement mit stromverteilungsschicht und verfahren zur herstellung des optoelektronischen halbleiter-bauelements
TWI890733B (zh) * 2020-02-18 2025-07-21 日商索尼半導體解決方案公司 發光裝置及發光裝置之製造方法
US11588299B2 (en) * 2020-04-07 2023-02-21 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser fabrication on large wafer
CN112260062A (zh) * 2020-09-10 2021-01-22 华芯半导体科技有限公司 垂直腔面发射激光器及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth
US5012486A (en) * 1990-04-06 1991-04-30 At&T Bell Laboratories Vertical cavity semiconductor laser with lattice-mismatched mirror stack
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US5206872A (en) * 1991-11-01 1993-04-27 At&T Bell Laboratories Surface emitting laser
US5207864A (en) * 1991-12-30 1993-05-04 Bell Communications Research Low-temperature fusion of dissimilar semiconductors
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
DE69400237T2 (de) * 1993-02-22 1996-12-05 Philips Electronics Nv Halbleiterlaserdioden und Herstellungsverfahren
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator
US5459081A (en) * 1993-12-21 1995-10-17 Nec Corporation Process for transferring a device to a substrate by viewing a registration pattern
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5491712A (en) * 1994-10-31 1996-02-13 Lin; Hong Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
US5659568A (en) * 1995-05-23 1997-08-19 Hewlett-Packard Company Low noise surface emitting laser for multimode optical link applications
US5583072A (en) * 1995-06-30 1996-12-10 Siemens Components, Inc. Method of manufacturing a monolithic linear optocoupler
US5707139A (en) * 1995-11-01 1998-01-13 Hewlett-Packard Company Vertical cavity surface emitting laser arrays for illumination

Similar Documents

Publication Publication Date Title
JPH09172229A5 (enExample)
JP7522209B2 (ja) 3D及びLiDARセンシングモジュール
KR100843787B1 (ko) 발광 소자
CA2051223C (en) High-density, independently addressable surface emitting semiconductor laser/light emitting diode array
KR100937879B1 (ko) 역전 발광 소자 제조 방법 및 역전 발광 다이오드
CN102742038B (zh) 具有横向构造的带介质镜的发光二极管
JP6176298B2 (ja) 面発光型半導体レーザアレイ及び面発光型半導体レーザアレイの製造方法
US9941455B2 (en) Light emitting diode and light emitting device including the same
JPH04294591A (ja) 高密度、個別アドレス可能型表面発光半導体レーザー/発光ダイオードアレイ
JP3707279B2 (ja) 半導体発光装置
JP2008277342A (ja) 発光ダイオード
US6603151B2 (en) Method and structure for packaging a high efficiency electro-optics device
JP2004514285A (ja) 光抽出を改善するためのテーパーづけ側壁を有するレーザ分離ダイ
US9129834B2 (en) Submount for LED device package
JP3610235B2 (ja) 面型発光素子装置
JP2022500880A (ja) 位相結合されたレーザ装置、および位相結合されたレーザ装置を製造するための方法
JP5064626B2 (ja) レーザダイオード装置およびその製造方法
JP2005340836A (ja) オプトエレクトロニクス構成素子及びその製造方法
JPH0590329A (ja) 半導体光素子
JPS5839080A (ja) 発光ダイオ−ド
JP3272060B2 (ja) 半導体素子
KR100830605B1 (ko) 광 검출기를 구비한 광소자
JPS6267886A (ja) 半導体発光装置
JPS61159788A (ja) 半導体レ−ザアレイ装置