JPH07335886A - 半導体集積回路構造およびその製造方法 - Google Patents
半導体集積回路構造およびその製造方法Info
- Publication number
- JPH07335886A JPH07335886A JP7163102A JP16310295A JPH07335886A JP H07335886 A JPH07335886 A JP H07335886A JP 7163102 A JP7163102 A JP 7163102A JP 16310295 A JP16310295 A JP 16310295A JP H07335886 A JPH07335886 A JP H07335886A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- substrate
- semiconductor integrated
- layer
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000002131 composite material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LUTSRLYCMSCGCS-BWOMAWGNSA-N [(3s,8r,9s,10r,13s)-10,13-dimethyl-17-oxo-1,2,3,4,7,8,9,11,12,16-decahydrocyclopenta[a]phenanthren-3-yl] acetate Chemical compound C([C@@H]12)C[C@]3(C)C(=O)CC=C3[C@@H]1CC=C1[C@]2(C)CC[C@H](OC(=O)C)C1 LUTSRLYCMSCGCS-BWOMAWGNSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9407119 | 1994-06-10 | ||
| FR9407119A FR2721139A1 (fr) | 1994-06-10 | 1994-06-10 | Structure de circuit intégré à semiconducteur et son procédé de fabrication. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07335886A true JPH07335886A (ja) | 1995-12-22 |
Family
ID=9464085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7163102A Pending JPH07335886A (ja) | 1994-06-10 | 1995-06-07 | 半導体集積回路構造およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH07335886A (fr) |
| KR (1) | KR960002885A (fr) |
| DE (1) | DE19521142A1 (fr) |
| FR (1) | FR2721139A1 (fr) |
| GB (1) | GB2290905A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049214B2 (en) | 2003-03-31 | 2006-05-23 | Renesas Technology Corp. | Method of manufacturing a semiconductor device to provide improved adhesion between bonding pads and ball portions of electrical connectors |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0671043B2 (ja) * | 1984-08-31 | 1994-09-07 | 株式会社東芝 | シリコン結晶体構造の製造方法 |
| FR2587841B1 (fr) * | 1985-09-24 | 1988-09-16 | Efcis | Composant semi-conducteur de puissance et logique de commande associee |
| US5204282A (en) * | 1988-09-30 | 1993-04-20 | Nippon Soken, Inc. | Semiconductor circuit structure and method for making the same |
| US4908328A (en) * | 1989-06-06 | 1990-03-13 | National Semiconductor Corporation | High voltage power IC process |
| US5389569A (en) * | 1992-03-03 | 1995-02-14 | Motorola, Inc. | Vertical and lateral isolation for a semiconductor device |
-
1994
- 1994-06-10 FR FR9407119A patent/FR2721139A1/fr active Pending
-
1995
- 1995-05-16 GB GB9510129A patent/GB2290905A/en not_active Withdrawn
- 1995-05-30 KR KR1019950013747A patent/KR960002885A/ko not_active Application Discontinuation
- 1995-06-07 JP JP7163102A patent/JPH07335886A/ja active Pending
- 1995-06-09 DE DE19521142A patent/DE19521142A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049214B2 (en) | 2003-03-31 | 2006-05-23 | Renesas Technology Corp. | Method of manufacturing a semiconductor device to provide improved adhesion between bonding pads and ball portions of electrical connectors |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19521142A1 (de) | 1995-12-14 |
| GB2290905A (en) | 1996-01-10 |
| GB9510129D0 (en) | 1995-08-02 |
| FR2721139A1 (fr) | 1995-12-15 |
| KR960002885A (ko) | 1996-01-26 |
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