GB9510129D0 - Semiconductor integrated circuit structure and method of fabricating same - Google Patents
Semiconductor integrated circuit structure and method of fabricating sameInfo
- Publication number
- GB9510129D0 GB9510129D0 GBGB9510129.1A GB9510129A GB9510129D0 GB 9510129 D0 GB9510129 D0 GB 9510129D0 GB 9510129 A GB9510129 A GB 9510129A GB 9510129 D0 GB9510129 D0 GB 9510129D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit structure
- fabricating same
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9407119A FR2721139A1 (en) | 1994-06-10 | 1994-06-10 | Semiconductor integrated circuit structure and method of manufacturing the same. |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9510129D0 true GB9510129D0 (en) | 1995-08-02 |
GB2290905A GB2290905A (en) | 1996-01-10 |
Family
ID=9464085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9510129A Withdrawn GB2290905A (en) | 1994-06-10 | 1995-05-16 | Semiconductor integrated circuit structure and method of fabricating same |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH07335886A (en) |
KR (1) | KR960002885A (en) |
DE (1) | DE19521142A1 (en) |
FR (1) | FR2721139A1 (en) |
GB (1) | GB2290905A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004303861A (en) | 2003-03-31 | 2004-10-28 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0671043B2 (en) * | 1984-08-31 | 1994-09-07 | 株式会社東芝 | Method for manufacturing silicon crystal structure |
FR2587841B1 (en) * | 1985-09-24 | 1988-09-16 | Efcis | SEMICONDUCTOR POWER COMPONENT AND RELATED CONTROL LOGIC |
US5204282A (en) * | 1988-09-30 | 1993-04-20 | Nippon Soken, Inc. | Semiconductor circuit structure and method for making the same |
US4908328A (en) * | 1989-06-06 | 1990-03-13 | National Semiconductor Corporation | High voltage power IC process |
US5389569A (en) * | 1992-03-03 | 1995-02-14 | Motorola, Inc. | Vertical and lateral isolation for a semiconductor device |
-
1994
- 1994-06-10 FR FR9407119A patent/FR2721139A1/en active Pending
-
1995
- 1995-05-16 GB GB9510129A patent/GB2290905A/en not_active Withdrawn
- 1995-05-30 KR KR1019950013747A patent/KR960002885A/en not_active Application Discontinuation
- 1995-06-07 JP JP7163102A patent/JPH07335886A/en active Pending
- 1995-06-09 DE DE19521142A patent/DE19521142A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2721139A1 (en) | 1995-12-15 |
DE19521142A1 (en) | 1995-12-14 |
JPH07335886A (en) | 1995-12-22 |
KR960002885A (en) | 1996-01-26 |
GB2290905A (en) | 1996-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |