GB2290905A - Semiconductor integrated circuit structure and method of fabricating same - Google Patents
Semiconductor integrated circuit structure and method of fabricating same Download PDFInfo
- Publication number
- GB2290905A GB2290905A GB9510129A GB9510129A GB2290905A GB 2290905 A GB2290905 A GB 2290905A GB 9510129 A GB9510129 A GB 9510129A GB 9510129 A GB9510129 A GB 9510129A GB 2290905 A GB2290905 A GB 2290905A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon substrate
- integrated circuit
- semiconductor integrated
- circuit structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical group C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9407119A FR2721139A1 (fr) | 1994-06-10 | 1994-06-10 | Structure de circuit intégré à semiconducteur et son procédé de fabrication. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9510129D0 GB9510129D0 (en) | 1995-08-02 |
| GB2290905A true GB2290905A (en) | 1996-01-10 |
Family
ID=9464085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9510129A Withdrawn GB2290905A (en) | 1994-06-10 | 1995-05-16 | Semiconductor integrated circuit structure and method of fabricating same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH07335886A (fr) |
| KR (1) | KR960002885A (fr) |
| DE (1) | DE19521142A1 (fr) |
| FR (1) | FR2721139A1 (fr) |
| GB (1) | GB2290905A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004303861A (ja) | 2003-03-31 | 2004-10-28 | Renesas Technology Corp | 半導体装置およびその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0176747A1 (fr) * | 1984-08-31 | 1986-04-09 | Kabushiki Kaisha Toshiba | Substrat semi-conducteur en silicium à couche isolante enterrée et son procédé de fabrication |
| EP0220974A1 (fr) * | 1985-09-24 | 1987-05-06 | STMicroelectronics S.A. | Composant semiconducteur de puissance et logique de commande associée |
| EP0405183A2 (fr) * | 1989-06-06 | 1991-01-02 | National Semiconductor Corporation | Isolation diélectrique pour procédé IC de haute puissance à haute tension |
| US5204282A (en) * | 1988-09-30 | 1993-04-20 | Nippon Soken, Inc. | Semiconductor circuit structure and method for making the same |
| EP0559405A2 (fr) * | 1992-03-03 | 1993-09-08 | Motorola, Inc. | Isolation verticale et latérale pour dispositif semi-conducteur |
-
1994
- 1994-06-10 FR FR9407119A patent/FR2721139A1/fr active Pending
-
1995
- 1995-05-16 GB GB9510129A patent/GB2290905A/en not_active Withdrawn
- 1995-05-30 KR KR1019950013747A patent/KR960002885A/ko not_active Application Discontinuation
- 1995-06-07 JP JP7163102A patent/JPH07335886A/ja active Pending
- 1995-06-09 DE DE19521142A patent/DE19521142A1/de not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0176747A1 (fr) * | 1984-08-31 | 1986-04-09 | Kabushiki Kaisha Toshiba | Substrat semi-conducteur en silicium à couche isolante enterrée et son procédé de fabrication |
| EP0220974A1 (fr) * | 1985-09-24 | 1987-05-06 | STMicroelectronics S.A. | Composant semiconducteur de puissance et logique de commande associée |
| US5204282A (en) * | 1988-09-30 | 1993-04-20 | Nippon Soken, Inc. | Semiconductor circuit structure and method for making the same |
| EP0405183A2 (fr) * | 1989-06-06 | 1991-01-02 | National Semiconductor Corporation | Isolation diélectrique pour procédé IC de haute puissance à haute tension |
| EP0559405A2 (fr) * | 1992-03-03 | 1993-09-08 | Motorola, Inc. | Isolation verticale et latérale pour dispositif semi-conducteur |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9510129D0 (en) | 1995-08-02 |
| JPH07335886A (ja) | 1995-12-22 |
| FR2721139A1 (fr) | 1995-12-15 |
| DE19521142A1 (de) | 1995-12-14 |
| KR960002885A (ko) | 1996-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6927452B2 (en) | Semiconductor device having dual isolation structure and method of fabricating the same | |
| US5294559A (en) | Method of forming a vertical transistor | |
| US6525373B1 (en) | Power semiconductor device having trench gate structure and method for manufacturing the same | |
| US6051468A (en) | Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance | |
| KR100457413B1 (ko) | 유전체 분리구조를 갖는 절연게이트형 바이폴러트랜지스터를 갖춘 반도체장치 및 그 제조방법 | |
| JPH08227945A (ja) | ＢｉＣＤＭＯＳプロセスに基づく集積回路形成方法 | |
| JPH09266248A (ja) | 半導体装置 | |
| JP3014012B2 (ja) | 半導体装置の製造方法 | |
| US20030193077A1 (en) | Bipolar transistor and method of fabricating the same | |
| KR100281907B1 (ko) | 인텔리전트 전력 집적 회로 및 이를 제조하는 방법 | |
| US6534369B2 (en) | Field effect transistor and method of fabrication | |
| US7524730B2 (en) | Method of fabricating bipolar junction transistor | |
| KR20030026912A (ko) | 고전압 주변부 | |
| US7119431B1 (en) | Apparatus and method for forming heat sinks on silicon on insulator wafers | |
| EP0646960B1 (fr) | Dispositif semi-conducteur comprenant un élément semi-conducteur à structure mesa | |
| KR20060077009A (ko) | 고전압 트랜지스터 및 저전압 트랜지스터를 갖는 반도체소자 | |
| GB2290905A (en) | Semiconductor integrated circuit structure and method of fabricating same | |
| KR20010051263A (ko) | Ｍｏｓｆｅｔ 스페이서를 위한 다층 구조물 | |
| US6709936B1 (en) | Narrow high performance MOSFET device design | |
| US6150225A (en) | Method for fabricating a semiconductor device having vertical and lateral type bipolar transistors | |
| JPH10242454A (ja) | 半導体装置 | |
| KR100265049B1 (ko) | 에스.오.아이 소자의 모스 전계효과 트랜지스터 및제조방법 | |
| JP2001274383A (ja) | 半導体装置及びその製造方法 | |
| US20220328685A1 (en) | Method for fabricating transistor structure | |
| JPS604591B2 (ja) | 半導体集積回路装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |