JPH07211674A - 電気光学デバイスを製造する方法 - Google Patents

電気光学デバイスを製造する方法

Info

Publication number
JPH07211674A
JPH07211674A JP32204994A JP32204994A JPH07211674A JP H07211674 A JPH07211674 A JP H07211674A JP 32204994 A JP32204994 A JP 32204994A JP 32204994 A JP32204994 A JP 32204994A JP H07211674 A JPH07211674 A JP H07211674A
Authority
JP
Japan
Prior art keywords
wafer
bar
electro
substrate
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32204994A
Other languages
English (en)
Japanese (ja)
Inventor
Mark B Cholewa
バーナード チョレワ マーク
John W Osenbach
ウィリアム オーゼンバッハ ジョン
Bryan P Segner
フィリップ セグナー ブリアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Corp filed Critical American Telephone and Telegraph Co Inc
Publication of JPH07211674A publication Critical patent/JPH07211674A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP32204994A 1993-12-30 1994-12-26 電気光学デバイスを製造する方法 Pending JPH07211674A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US175468 1993-12-30
US08/175,468 US5418190A (en) 1993-12-30 1993-12-30 Method of fabrication for electro-optical devices

Publications (1)

Publication Number Publication Date
JPH07211674A true JPH07211674A (ja) 1995-08-11

Family

ID=22640334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32204994A Pending JPH07211674A (ja) 1993-12-30 1994-12-26 電気光学デバイスを製造する方法

Country Status (5)

Country Link
US (1) US5418190A (ko)
JP (1) JPH07211674A (ko)
KR (1) KR0149193B1 (ko)
GB (1) GB2285333B (ko)
SG (1) SG43162A1 (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19538634C2 (de) * 1995-10-17 1997-09-04 Itt Ind Gmbh Deutsche Verfahren zum Vereinzeln von elektronischen Elementen aus einem Halbleiterwafer
US5739048A (en) * 1994-05-23 1998-04-14 International Business Machines Corporation Method for forming rows of partially separated thin film elements
US5596222A (en) * 1994-08-12 1997-01-21 The Charles Stark Draper Laboratory, Inc. Wafer of transducer chips
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
SG67365A1 (en) * 1995-11-21 1999-09-21 Texas Instruments Inc Trench scribe line for decreased chip spacing
WO1997021254A1 (en) * 1995-12-06 1997-06-12 Philips Electronics N.V. Method of manufacturing a semiconductor diode laser
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
US5904548A (en) * 1996-11-21 1999-05-18 Texas Instruments Incorporated Trench scribe line for decreased chip spacing
JPH10209506A (ja) * 1997-01-24 1998-08-07 Rohm Co Ltd 半導体発光素子の製法
TW353202B (en) * 1997-02-28 1999-02-21 Hewlett Packard Co Scribe and break of hard-to-scribe materials
US5789302A (en) 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
US6017804A (en) * 1998-01-09 2000-01-25 Lucent Technologies Inc. Method and apparatus for cleaving semiconductor material
US6048747A (en) * 1998-05-01 2000-04-11 Lucent Technologies, Inc. Laser bar cleaving apparatus
US6098862A (en) * 1998-05-18 2000-08-08 Lucent Technologies Inc. Incrementally continuous laser cleaving process
EP0977276A1 (en) 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
EP1788416B1 (en) * 1998-09-24 2008-03-05 LG Cable & Machinery Ltd. Method for manufacturing laser diode chip
US6074934A (en) * 1998-11-20 2000-06-13 Lucent Technologies Inc. Apparatus for cleaving laser bars
US6102267A (en) * 1998-12-10 2000-08-15 Lucent Technologies, Inc. Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material
JP2001250799A (ja) * 2000-03-03 2001-09-14 Mitsubishi Electric Corp 半導体ウェハおよび半導体装置
US6415843B1 (en) 2001-01-10 2002-07-09 Anadigics, Inc. Spatula for separation of thinned wafer from mounting carrier
GB2371406A (en) * 2001-01-23 2002-07-24 Univ Glasgow An Optically Active Device
US6475878B1 (en) * 2001-08-09 2002-11-05 Dusan Slepcevic Method for singulation of integrated circuit devices
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US6881600B2 (en) * 2002-07-29 2005-04-19 Digital Optics Corp Etching in combination with other processing techniques to facilitate alignment of a die in a system and structures formed thereby
CA2504099A1 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices
JP4776907B2 (ja) * 2003-11-11 2011-09-21 日本電波工業株式会社 光学フィルタの製造方法
US7052977B1 (en) 2004-07-06 2006-05-30 National Semiconductor Corporation Method of dicing a semiconductor wafer that substantially reduces the width of the saw street
JP4731241B2 (ja) * 2005-08-02 2011-07-20 株式会社ディスコ ウエーハの分割方法
JP4945167B2 (ja) * 2006-05-12 2012-06-06 スタンレー電気株式会社 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法
KR20120031697A (ko) * 2010-09-27 2012-04-04 삼성전자주식회사 패키지 적층 구조 및 그 제조 방법
GB2489397B (en) * 2011-03-04 2013-08-14 Univ Swansea A method of making a semiconductor wafer
US9356422B2 (en) * 2014-02-26 2016-05-31 Applied Optoelectronics, Inc. Scribe etch process for semiconductor laser chip manufacturing
DE102015203393A1 (de) * 2015-02-25 2016-08-25 Infineon Technologies Ag Halbleiterelement und Verfahren zu Herstellen von diesem
US10490428B2 (en) * 2017-12-22 2019-11-26 Lumidleds LLC Method and system for dual stretching of wafers for isolated segmented chip scale packages

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270781A (en) * 1975-11-12 1977-06-13 Nec Corp Manufacture of semiconductor laser crystal piece
JPS5527623A (en) * 1978-08-17 1980-02-27 Mitsubishi Electric Corp Semiconductor wafer dividing method
JPS5793545A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1652512B2 (de) * 1967-05-29 1976-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
FR2438914A1 (ko) * 1978-10-13 1980-05-09 Exxon Research Engineering Co
US4237601A (en) * 1978-10-13 1980-12-09 Exxon Research & Engineering Co. Method of cleaving semiconductor diode laser wafers
US4236296A (en) * 1978-10-13 1980-12-02 Exxon Research & Engineering Co. Etch method of cleaving semiconductor diode laser wafers
US4604161A (en) * 1985-05-02 1986-08-05 Xerox Corporation Method of fabricating image sensor arrays
DE3731312C2 (de) * 1987-09-17 1997-02-13 Siemens Ag Verfahren zum Vereinzeln von monolithisch hergestellten Laserdioden
FR2648274B1 (fr) * 1989-06-07 1994-07-29 Commissariat Energie Atomique Procede et dispositif de marquage et de clivage de plaquettes de materiaux semi-conducteurs monocristallins
JPH04276645A (ja) * 1991-03-04 1992-10-01 Toshiba Corp 化合物半導体ウエーハのダイシング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270781A (en) * 1975-11-12 1977-06-13 Nec Corp Manufacture of semiconductor laser crystal piece
JPS5527623A (en) * 1978-08-17 1980-02-27 Mitsubishi Electric Corp Semiconductor wafer dividing method
JPS5793545A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
GB9424642D0 (en) 1995-02-01
US5418190A (en) 1995-05-23
GB2285333A (en) 1995-07-05
KR0149193B1 (ko) 1998-12-01
SG43162A1 (en) 1997-10-17
KR950021824A (ko) 1995-07-26
GB2285333B (en) 1998-06-17

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