GB2489397B - A method of making a semiconductor wafer - Google Patents

A method of making a semiconductor wafer

Info

Publication number
GB2489397B
GB2489397B GB1103720.7A GB201103720A GB2489397B GB 2489397 B GB2489397 B GB 2489397B GB 201103720 A GB201103720 A GB 201103720A GB 2489397 B GB2489397 B GB 2489397B
Authority
GB
United Kingdom
Prior art keywords
trench
wafer
substrate
making
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1103720.7A
Other versions
GB2489397A (en
GB2489397A8 (en
GB201103720D0 (en
Inventor
Owen J Guy
Yufei Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swansea University
Original Assignee
Swansea University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swansea University filed Critical Swansea University
Priority to GB1103720.7A priority Critical patent/GB2489397B/en
Publication of GB201103720D0 publication Critical patent/GB201103720D0/en
Publication of GB2489397A publication Critical patent/GB2489397A/en
Publication of GB2489397A8 publication Critical patent/GB2489397A8/en
Application granted granted Critical
Publication of GB2489397B publication Critical patent/GB2489397B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

In a method of making a semiconductor wafer, the method comprises forming a trench or groove (26, fig. 7) in a single crystal wafer substrate (10); anisotropically etching in the trench (26) to form an elongate notch 28, 30 and using the notch 28, 30 as an initiation site to cleave the substrate '10 along a crystal plane to separate a slim wafer 12. The anisotropic etch can be potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH). The trench can be formed by either saw or laser cutting. The plane of cleavage of the wafer runs parallel to the substrate surface, i.e. the surface which received the trench. This method produces thin wafers whose thicknesses can be less than 60 micron.
GB1103720.7A 2011-03-04 2011-03-04 A method of making a semiconductor wafer Expired - Fee Related GB2489397B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1103720.7A GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1103720.7A GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Publications (4)

Publication Number Publication Date
GB201103720D0 GB201103720D0 (en) 2011-04-20
GB2489397A GB2489397A (en) 2012-10-03
GB2489397A8 GB2489397A8 (en) 2013-03-06
GB2489397B true GB2489397B (en) 2013-08-14

Family

ID=43923213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1103720.7A Expired - Fee Related GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Country Status (1)

Country Link
GB (1) GB2489397B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3035120A1 (en) * 1980-09-17 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Division of semiconductor rod into wafers - by forming notches or grooves and splitting off wafers with focussed laser light
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
EP1091394A2 (en) * 1999-10-04 2001-04-11 Tokyo Seimitsu Co.,Ltd. Method for manufacturing thin semiconductor chips
WO2003044841A2 (en) * 2001-11-19 2003-05-30 Denselight Semiconductors Pte Ltd. Method of dicing a complex topologically structured wafer
US20040055634A1 (en) * 2002-05-08 2004-03-25 Kabushiki Kaisha Y.Y.L. Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
JP2006245498A (en) * 2005-03-07 2006-09-14 Sharp Corp Process and apparatus for producing substrate
WO2007087354A2 (en) * 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
US20080061303A1 (en) * 2006-09-06 2008-03-13 Kabushiki Kaisha Toshiba Compound semiconductor device and method for manufacturing same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3035120A1 (en) * 1980-09-17 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Division of semiconductor rod into wafers - by forming notches or grooves and splitting off wafers with focussed laser light
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
EP1091394A2 (en) * 1999-10-04 2001-04-11 Tokyo Seimitsu Co.,Ltd. Method for manufacturing thin semiconductor chips
WO2003044841A2 (en) * 2001-11-19 2003-05-30 Denselight Semiconductors Pte Ltd. Method of dicing a complex topologically structured wafer
US20040055634A1 (en) * 2002-05-08 2004-03-25 Kabushiki Kaisha Y.Y.L. Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
JP2006245498A (en) * 2005-03-07 2006-09-14 Sharp Corp Process and apparatus for producing substrate
WO2007087354A2 (en) * 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
US20080061303A1 (en) * 2006-09-06 2008-03-13 Kabushiki Kaisha Toshiba Compound semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
GB2489397A (en) 2012-10-03
GB2489397A8 (en) 2013-03-06
GB201103720D0 (en) 2011-04-20

Similar Documents

Publication Publication Date Title
SG178564A1 (en) Selective silicon etch process
SG141320A1 (en) Method for cutting glass laminate
TW200742130A (en) Improved external extraction light emitting diode based upon crystallographic faceted surfaces
TWI268551B (en) Method of fabricating semiconductor device
TW200719432A (en) Semiconductor wafer dividing method
GB2467935B (en) Formation of thin layers of GaAs and germanium materials
MY181614A (en) Sic wafer producing method
WO2008139509A1 (en) Process for producing semiconductor device
WO2012178059A3 (en) Etching a laser-cut semiconductor before dicing a die attach film (daf) or other material layer
WO2011123670A3 (en) Method and apparatus for improved wafer singulation
MY163201A (en) Silicon polishing compositions with improved psd performance
GB2491930B (en) Method for controlled removal of a semiconductor device layer from a base substrate
WO2007145679A3 (en) Planarization of gan by photoresist technique using an inductively coupled plasma
WO2011096684A3 (en) Method for manufacturing galium naitride wafer
FR2907916B1 (en) NEW SLOT GUIDE STRUCTURE
GB2495166A (en) Single-junction photovoltaic cell
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
CL2013002966A1 (en) Stable mixture comprising surface modified particles; process to produce said particle; and use of said particles.
GB201314148D0 (en) Structure and method for hard mask removal on an soi substrate without using CMP process
TW201612976A (en) Etching method and storage medium
TW200802974A (en) Method of fabricating light emitting device and thus-fabricated light emitting device
WO2012047459A3 (en) Selective etch process for silicon nitride
TW200504823A (en) Method for keeping the precision of photolithography alignment after wafer bonding
GB2489397B (en) A method of making a semiconductor wafer
TW200834127A (en) Method for cutting a prism sheet

Legal Events

Date Code Title Description
S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 22 FEBRUARY 2017

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20170525 AND 20170531

S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 22 FEBRUARY 2017 NOT PROCEEDING WITH ON 23 MAY 2017

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180304