JPH06101466B2 - シリコン層上に２酸化シリコンの絶縁誘電体層を作る方法 - Google Patents
シリコン層上に２酸化シリコンの絶縁誘電体層を作る方法Info
- Publication number
- JPH06101466B2 JPH06101466B2 JP58213177A JP21317783A JPH06101466B2 JP H06101466 B2 JPH06101466 B2 JP H06101466B2 JP 58213177 A JP58213177 A JP 58213177A JP 21317783 A JP21317783 A JP 21317783A JP H06101466 B2 JPH06101466 B2 JP H06101466B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- silicon layer
- silicon dioxide
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 69
- 235000012239 silicon dioxide Nutrition 0.000 title claims description 34
- 239000000377 silicon dioxide Substances 0.000 title claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 23
- 229910052710 silicon Inorganic materials 0.000 title claims description 23
- 239000010703 silicon Substances 0.000 title claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000012298 atmosphere Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 13
- 239000002344 surface layer Substances 0.000 claims 2
- 239000000523 sample Substances 0.000 description 33
- 230000015556 catabolic process Effects 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 230000005684 electric field Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44137282A | 1982-11-12 | 1982-11-12 | |
| US441372 | 1982-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59103347A JPS59103347A (ja) | 1984-06-14 |
| JPH06101466B2 true JPH06101466B2 (ja) | 1994-12-12 |
Family
ID=23752622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58213177A Expired - Lifetime JPH06101466B2 (ja) | 1982-11-12 | 1983-11-11 | シリコン層上に２酸化シリコンの絶縁誘電体層を作る方法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH06101466B2 (enrdf_load_stackoverflow) |
| DE (1) | DE3340583A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2536208B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2131407B (enrdf_load_stackoverflow) |
| IT (1) | IT1171798B (enrdf_load_stackoverflow) |
| SE (1) | SE500975C2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814291A (en) * | 1986-02-25 | 1989-03-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making devices having thin dielectric layers |
| US4874716A (en) * | 1986-04-01 | 1989-10-17 | Texas Instrument Incorporated | Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface |
| EP0281233A1 (en) * | 1987-01-30 | 1988-09-07 | AT&T Corp. | Improved formation of dielectric on deposited silicon |
| US5851871A (en) * | 1987-12-23 | 1998-12-22 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing integrated capacitors in MOS technology |
| DE69032773T2 (de) * | 1989-02-14 | 1999-05-27 | Seiko Epson Corp., Tokio/Tokyo | Verfahren zur Herstellung einer Halbleitervorrichtung |
| EP0545585A3 (en) * | 1991-12-03 | 1996-11-06 | American Telephone & Telegraph | Integrated circuit fabrication comprising a locos process |
| US5665620A (en) * | 1994-08-01 | 1997-09-09 | Motorola, Inc. | Method for forming concurrent top oxides using reoxidized silicon in an EPROM |
| US5712177A (en) * | 1994-08-01 | 1998-01-27 | Motorola, Inc. | Method for forming a reverse dielectric stack |
| EP1192646B1 (en) | 1999-06-25 | 2008-08-13 | Massachusetts Institute Of Technology | Cyclic thermal anneal for dislocation reduction |
| CN112992672B (zh) * | 2019-12-16 | 2022-10-14 | 山东有研半导体材料有限公司 | 一种硅基二氧化硅背封薄膜的制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| JPS5910060B2 (ja) * | 1976-03-01 | 1984-03-06 | 株式会社日立製作所 | 半導体装置の製造方法 |
| IT1089298B (it) * | 1977-01-17 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55115341A (en) * | 1979-02-28 | 1980-09-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5676537A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4479831A (en) * | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
-
1983
- 1983-11-03 GB GB08329380A patent/GB2131407B/en not_active Expired
- 1983-11-04 SE SE8306071A patent/SE500975C2/sv unknown
- 1983-11-10 FR FR8317930A patent/FR2536208B1/fr not_active Expired
- 1983-11-10 DE DE19833340583 patent/DE3340583A1/de active Granted
- 1983-11-11 IT IT23691/83A patent/IT1171798B/it active
- 1983-11-11 JP JP58213177A patent/JPH06101466B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2536208A1 (fr) | 1984-05-18 |
| SE500975C2 (sv) | 1994-10-10 |
| DE3340583C2 (enrdf_load_stackoverflow) | 1993-04-29 |
| GB2131407B (en) | 1987-02-04 |
| GB2131407A (en) | 1984-06-20 |
| SE8306071D0 (sv) | 1983-11-04 |
| JPS59103347A (ja) | 1984-06-14 |
| SE8306071L (sv) | 1984-05-13 |
| DE3340583A1 (de) | 1984-05-17 |
| IT1171798B (it) | 1987-06-10 |
| IT8323691A0 (it) | 1983-11-11 |
| FR2536208B1 (fr) | 1987-03-20 |
| GB8329380D0 (en) | 1983-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4464701A (en) | Process for making high dielectric constant nitride based materials and devices using the same | |
| JPS6010773A (ja) | １素子型ｆｅｔ−記憶キヤパシタ回路の形成方法 | |
| JPH0379869B2 (enrdf_load_stackoverflow) | ||
| JPH03159166A (ja) | 半導体装置及びその製造方法 | |
| US4377605A (en) | Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique | |
| JPH06101466B2 (ja) | シリコン層上に２酸化シリコンの絶縁誘電体層を作る方法 | |
| JPH05109982A (ja) | 半導体装置及びその製造方法 | |
| JP3295178B2 (ja) | 半導体装置の製造方法 | |
| JPH06204209A (ja) | 半導体素子の酸化膜形成方法 | |
| DE3608418A1 (de) | Verfahren zur herstellung eines mosfet-gateisolatorfilms | |
| JP2000164592A (ja) | 界面に窒素を取り込む積層型又は複合型ゲ―ト誘電体 | |
| KR0178992B1 (ko) | 디램용 커패시터 유전체막 제조방법 | |
| US6392261B1 (en) | Solid state imaging device and manufacturing method thereof | |
| JP2903735B2 (ja) | 半導体装置 | |
| JPS61295644A (ja) | 半導体装置の製造方法 | |
| KR960005244B1 (ko) | 반도체 디바이스 및 그 제조 방법과 반도체 디바이스 제조 시스템 | |
| JPH08116053A (ja) | 半導体装置の製造方法 | |
| KR930001853B1 (ko) | 2층 질화막 구조를 이용한 고유전박막 제조방법 | |
| JPH0368141A (ja) | 半導体メモリ用絶縁膜の製造方法 | |
| JP2943383B2 (ja) | 半導体装置の製造方法 | |
| JPS6360550A (ja) | 半導体装置およびその製造方法 | |
| JPS61220455A (ja) | 半導体記憶装置の製造方法 | |
| JPH01187848A (ja) | キヤパシタおよびその製造方法 | |
| KR0123737B1 (ko) | 커패시터 유전체막 형성방법 | |
| JPS609155A (ja) | 記憶装置 |