IT1171798B - Metodo di formazione di biossodio di silicio - Google Patents
Metodo di formazione di biossodio di silicioInfo
- Publication number
- IT1171798B IT1171798B IT23691/83A IT2369183A IT1171798B IT 1171798 B IT1171798 B IT 1171798B IT 23691/83 A IT23691/83 A IT 23691/83A IT 2369183 A IT2369183 A IT 2369183A IT 1171798 B IT1171798 B IT 1171798B
- Authority
- IT
- Italy
- Prior art keywords
- biosodium
- training
- silicon
- silicon biosodium
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44137282A | 1982-11-12 | 1982-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8323691A0 IT8323691A0 (it) | 1983-11-11 |
| IT1171798B true IT1171798B (it) | 1987-06-10 |
Family
ID=23752622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23691/83A IT1171798B (it) | 1982-11-12 | 1983-11-11 | Metodo di formazione di biossodio di silicio |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH06101466B2 (it) |
| DE (1) | DE3340583A1 (it) |
| FR (1) | FR2536208B1 (it) |
| GB (1) | GB2131407B (it) |
| IT (1) | IT1171798B (it) |
| SE (1) | SE500975C2 (it) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814291A (en) * | 1986-02-25 | 1989-03-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making devices having thin dielectric layers |
| US4874716A (en) * | 1986-04-01 | 1989-10-17 | Texas Instrument Incorporated | Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface |
| EP0281233A1 (en) * | 1987-01-30 | 1988-09-07 | AT&T Corp. | Improved formation of dielectric on deposited silicon |
| US5851871A (en) * | 1987-12-23 | 1998-12-22 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing integrated capacitors in MOS technology |
| SG108807A1 (en) * | 1989-02-14 | 2005-02-28 | Seiko Epson Corp | A semiconductor device and its manufacturing method |
| EP0545585A3 (en) * | 1991-12-03 | 1996-11-06 | American Telephone & Telegraph | Integrated circuit fabrication comprising a locos process |
| US5712177A (en) * | 1994-08-01 | 1998-01-27 | Motorola, Inc. | Method for forming a reverse dielectric stack |
| US5665620A (en) * | 1994-08-01 | 1997-09-09 | Motorola, Inc. | Method for forming concurrent top oxides using reoxidized silicon in an EPROM |
| DE60045126D1 (de) | 1999-06-25 | 2010-12-02 | Massachusetts Inst Technology | Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht |
| CN112992672B (zh) * | 2019-12-16 | 2022-10-14 | 山东有研半导体材料有限公司 | 一种硅基二氧化硅背封薄膜的制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| JPS5910060B2 (ja) * | 1976-03-01 | 1984-03-06 | 株式会社日立製作所 | 半導体装置の製造方法 |
| IT1089298B (it) * | 1977-01-17 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55115341A (en) * | 1979-02-28 | 1980-09-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5676537A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4479831A (en) * | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
-
1983
- 1983-11-03 GB GB08329380A patent/GB2131407B/en not_active Expired
- 1983-11-04 SE SE8306071A patent/SE500975C2/sv unknown
- 1983-11-10 FR FR8317930A patent/FR2536208B1/fr not_active Expired
- 1983-11-10 DE DE19833340583 patent/DE3340583A1/de active Granted
- 1983-11-11 JP JP58213177A patent/JPH06101466B2/ja not_active Expired - Lifetime
- 1983-11-11 IT IT23691/83A patent/IT1171798B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06101466B2 (ja) | 1994-12-12 |
| FR2536208B1 (fr) | 1987-03-20 |
| GB2131407A (en) | 1984-06-20 |
| FR2536208A1 (fr) | 1984-05-18 |
| JPS59103347A (ja) | 1984-06-14 |
| IT8323691A0 (it) | 1983-11-11 |
| SE8306071L (sv) | 1984-05-13 |
| GB2131407B (en) | 1987-02-04 |
| GB8329380D0 (en) | 1983-12-07 |
| SE500975C2 (sv) | 1994-10-10 |
| DE3340583A1 (de) | 1984-05-17 |
| SE8306071D0 (sv) | 1983-11-04 |
| DE3340583C2 (it) | 1993-04-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971125 |