SE500975C2 - Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C - Google Patents
Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader CInfo
- Publication number
- SE500975C2 SE500975C2 SE8306071A SE8306071A SE500975C2 SE 500975 C2 SE500975 C2 SE 500975C2 SE 8306071 A SE8306071 A SE 8306071A SE 8306071 A SE8306071 A SE 8306071A SE 500975 C2 SE500975 C2 SE 500975C2
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- silicon layer
- amorphous silicon
- silicon
- precipitation
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052710 silicon Inorganic materials 0.000 title claims description 22
- 239000010703 silicon Substances 0.000 title claims description 22
- 238000001556 precipitation Methods 0.000 title claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000012298 atmosphere Substances 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000001376 precipitating effect Effects 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 29
- 229920005591 polysilicon Polymers 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000013068 control sample Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44137282A | 1982-11-12 | 1982-11-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8306071D0 SE8306071D0 (sv) | 1983-11-04 |
| SE8306071L SE8306071L (sv) | 1984-05-13 |
| SE500975C2 true SE500975C2 (sv) | 1994-10-10 |
Family
ID=23752622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8306071A SE500975C2 (sv) | 1982-11-12 | 1983-11-04 | Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH06101466B2 (enrdf_load_stackoverflow) |
| DE (1) | DE3340583A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2536208B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2131407B (enrdf_load_stackoverflow) |
| IT (1) | IT1171798B (enrdf_load_stackoverflow) |
| SE (1) | SE500975C2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814291A (en) * | 1986-02-25 | 1989-03-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making devices having thin dielectric layers |
| US4874716A (en) * | 1986-04-01 | 1989-10-17 | Texas Instrument Incorporated | Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface |
| EP0281233A1 (en) * | 1987-01-30 | 1988-09-07 | AT&T Corp. | Improved formation of dielectric on deposited silicon |
| US5851871A (en) * | 1987-12-23 | 1998-12-22 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing integrated capacitors in MOS technology |
| DE69032773T2 (de) * | 1989-02-14 | 1999-05-27 | Seiko Epson Corp., Tokio/Tokyo | Verfahren zur Herstellung einer Halbleitervorrichtung |
| EP0545585A3 (en) * | 1991-12-03 | 1996-11-06 | American Telephone & Telegraph | Integrated circuit fabrication comprising a locos process |
| US5665620A (en) * | 1994-08-01 | 1997-09-09 | Motorola, Inc. | Method for forming concurrent top oxides using reoxidized silicon in an EPROM |
| US5712177A (en) * | 1994-08-01 | 1998-01-27 | Motorola, Inc. | Method for forming a reverse dielectric stack |
| EP1192646B1 (en) | 1999-06-25 | 2008-08-13 | Massachusetts Institute Of Technology | Cyclic thermal anneal for dislocation reduction |
| CN112992672B (zh) * | 2019-12-16 | 2022-10-14 | 山东有研半导体材料有限公司 | 一种硅基二氧化硅背封薄膜的制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| JPS5910060B2 (ja) * | 1976-03-01 | 1984-03-06 | 株式会社日立製作所 | 半導体装置の製造方法 |
| IT1089298B (it) * | 1977-01-17 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55115341A (en) * | 1979-02-28 | 1980-09-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5676537A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4479831A (en) * | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
-
1983
- 1983-11-03 GB GB08329380A patent/GB2131407B/en not_active Expired
- 1983-11-04 SE SE8306071A patent/SE500975C2/sv unknown
- 1983-11-10 FR FR8317930A patent/FR2536208B1/fr not_active Expired
- 1983-11-10 DE DE19833340583 patent/DE3340583A1/de active Granted
- 1983-11-11 IT IT23691/83A patent/IT1171798B/it active
- 1983-11-11 JP JP58213177A patent/JPH06101466B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2536208A1 (fr) | 1984-05-18 |
| DE3340583C2 (enrdf_load_stackoverflow) | 1993-04-29 |
| GB2131407B (en) | 1987-02-04 |
| GB2131407A (en) | 1984-06-20 |
| SE8306071D0 (sv) | 1983-11-04 |
| JPS59103347A (ja) | 1984-06-14 |
| SE8306071L (sv) | 1984-05-13 |
| DE3340583A1 (de) | 1984-05-17 |
| IT1171798B (it) | 1987-06-10 |
| JPH06101466B2 (ja) | 1994-12-12 |
| IT8323691A0 (it) | 1983-11-11 |
| FR2536208B1 (fr) | 1987-03-20 |
| GB8329380D0 (en) | 1983-12-07 |
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