JPH0587914B2 - - Google Patents

Info

Publication number
JPH0587914B2
JPH0587914B2 JP59045202A JP4520284A JPH0587914B2 JP H0587914 B2 JPH0587914 B2 JP H0587914B2 JP 59045202 A JP59045202 A JP 59045202A JP 4520284 A JP4520284 A JP 4520284A JP H0587914 B2 JPH0587914 B2 JP H0587914B2
Authority
JP
Japan
Prior art keywords
potential
bit line
transfer transistor
power supply
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59045202A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60191499A (ja
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59045202A priority Critical patent/JPS60191499A/ja
Priority to DE8585301505T priority patent/DE3586064D1/de
Priority to EP85301505A priority patent/EP0154547B1/en
Priority to KR1019850001421A priority patent/KR910000383B1/ko
Publication of JPS60191499A publication Critical patent/JPS60191499A/ja
Priority to US07/143,204 priority patent/US4794571A/en
Publication of JPH0587914B2 publication Critical patent/JPH0587914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP59045202A 1984-03-09 1984-03-09 ダイナミツク型ランダムアクセスメモリ Granted JPS60191499A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59045202A JPS60191499A (ja) 1984-03-09 1984-03-09 ダイナミツク型ランダムアクセスメモリ
DE8585301505T DE3586064D1 (de) 1984-03-09 1985-03-05 Dynamischer lese-schreib-direktzugriffsspeicher.
EP85301505A EP0154547B1 (en) 1984-03-09 1985-03-05 A dynamic read-write random access memory
KR1019850001421A KR910000383B1 (ko) 1984-03-09 1985-03-06 다이나믹형 랜덤억세스메모리
US07/143,204 US4794571A (en) 1984-03-09 1988-01-11 Dynamic read-write random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59045202A JPS60191499A (ja) 1984-03-09 1984-03-09 ダイナミツク型ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JPS60191499A JPS60191499A (ja) 1985-09-28
JPH0587914B2 true JPH0587914B2 (OSRAM) 1993-12-20

Family

ID=12712677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59045202A Granted JPS60191499A (ja) 1984-03-09 1984-03-09 ダイナミツク型ランダムアクセスメモリ

Country Status (5)

Country Link
US (1) US4794571A (OSRAM)
EP (1) EP0154547B1 (OSRAM)
JP (1) JPS60191499A (OSRAM)
KR (1) KR910000383B1 (OSRAM)
DE (1) DE3586064D1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679172A (en) * 1985-05-28 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Dynamic memory with increased data retention time
JPH0770216B2 (ja) * 1985-11-22 1995-07-31 株式会社日立製作所 半導体集積回路
JPS63117391A (ja) * 1986-11-04 1988-05-21 Mitsubishi Electric Corp 半導体記憶装置
JPS63121197A (ja) * 1986-11-07 1988-05-25 Fujitsu Ltd 半導体記憶装置
US5007022A (en) * 1987-12-21 1991-04-09 Texas Instruments Incorporated Two-port two-transistor DRAM
JPH01166399A (ja) * 1987-12-23 1989-06-30 Toshiba Corp スタティック型ランダムアクセスメモリ
JPH01171194A (ja) * 1987-12-25 1989-07-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US5153701A (en) * 1987-12-28 1992-10-06 At&T Bell Laboratories Semiconductor device with low defect density oxide
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
KR0137768B1 (ko) * 1988-11-23 1998-06-01 존 지. 웨브 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
GB9007793D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dram cell plate and precharge voltage generator
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
JP3068377B2 (ja) * 1993-06-30 2000-07-24 日本電気株式会社 ダイナミック形半導体記憶装置
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
FR2787922B1 (fr) 1998-12-23 2002-06-28 St Microelectronics Sa Cellule memoire a programmation unique en technologie cmos
JP4084149B2 (ja) * 2002-09-13 2008-04-30 富士通株式会社 半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2454988C2 (de) * 1974-11-20 1976-09-09 Siemens Ag Schaltungsanordnung zur verhinderung des verlustes der in den kapazitaeten von nach dem dynamischen prinzip aufgebauten speicherzellen eines mos- speichers gespeicherten informationen
US4099265A (en) * 1976-12-22 1978-07-04 Motorola, Inc. Sense line balance circuit for static random access memory
JPS5399736A (en) * 1977-02-10 1978-08-31 Toshiba Corp Semiconductor memory unit
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof
JPS5661085A (en) * 1979-10-23 1981-05-26 Toshiba Corp Semiconductor memory device
JPS5712483A (en) * 1980-06-23 1982-01-22 Nec Corp Transistor circuit

Also Published As

Publication number Publication date
EP0154547A3 (en) 1987-01-21
KR850007156A (ko) 1985-10-30
JPS60191499A (ja) 1985-09-28
EP0154547B1 (en) 1992-05-20
DE3586064D1 (de) 1992-06-25
EP0154547A2 (en) 1985-09-11
US4794571A (en) 1988-12-27
KR910000383B1 (ko) 1991-01-24

Similar Documents

Publication Publication Date Title
KR100373223B1 (ko) 반도체장치
US6828612B2 (en) Semiconductor memory device
US6567330B2 (en) Semiconductor memory device
JP5132032B2 (ja) ゲート制御ダイオード・メモリ・セル
JP3085073B2 (ja) スタティックｒａｍ
KR950010621B1 (ko) 반도체 기억장치
JP5314086B2 (ja) レベル変換器を備える行デコーダ
US20020071308A1 (en) Semiconductor memory device having memory cells each capable of storing three or more values
JPH0587914B2 (OSRAM)
JP2000113683A (ja) 半導体装置
JPS6146977B2 (OSRAM)
JPH05274876A (ja) 半導体記憶装置
US5267192A (en) Semiconductor memory device
JPH0863964A (ja) 半導体記憶装置
JP5135608B2 (ja) 半導体記憶装置
JP3391266B2 (ja) 半導体メモリ
JP3212622B2 (ja) 半導体集積回路装置
JP4075090B2 (ja) 半導体装置
JP2868789B2 (ja) 半導体駆動回路
JPH0414435B2 (OSRAM)
JP2002269979A (ja) 半導体装置
KR0170694B1 (ko) 반도체 메모리 장치의 센스 증폭기 풀다운 구동회로
JPS6146978B2 (OSRAM)
JPH05291534A (ja) 電荷蓄積素子を有する半導体装置
JPH0415558B2 (OSRAM)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term