JPH0581051B2 - - Google Patents

Info

Publication number

JPH0581051B2

JPH0581051B2 JP61135353A JP13535386A JPH0581051B2 JP H0581051 B2 JPH0581051 B2 JP H0581051B2 JP 61135353 A JP61135353 A JP 61135353A JP 13535386 A JP13535386 A JP 13535386A JP H0581051 B2 JPH0581051 B2 JP H0581051B2

Authority

JP

Japan

Prior art keywords

film

electrode

region

polycrystalline silicon

oxide film

Prior art date

1986-06-11

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

• Espacenet
• Global Dossier
• Discuss

• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 50
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 27
• 239000004065 semiconductor Substances 0.000 claims description 23
• 238000004519 manufacturing process Methods 0.000 claims description 19
• 238000010438 heat treatment Methods 0.000 claims description 14
• 239000012535 impurity Substances 0.000 claims description 14
• 239000000758 substrate Substances 0.000 claims description 8
• 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
• 239000012298 atmosphere Substances 0.000 claims description 4
• 229910052698 phosphorus Inorganic materials 0.000 claims description 4
• 229910021332 silicide Inorganic materials 0.000 claims description 4
• 229910052785 arsenic Inorganic materials 0.000 claims description 3
• FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
• 229910052787 antimony Inorganic materials 0.000 claims description 2
• 238000002844 melting Methods 0.000 claims 1
• 230000008018 melting Effects 0.000 claims 1
• 239000002184 metal Substances 0.000 claims 1
• 230000007935 neutral effect Effects 0.000 claims 1
• 230000001590 oxidative effect Effects 0.000 claims 1
• 239000003870 refractory metal Substances 0.000 claims 1
• 238000000034 method Methods 0.000 description 12
• 238000005530 etching Methods 0.000 description 10
• 229910016006 MoSi Inorganic materials 0.000 description 9
• 238000000206 photolithography Methods 0.000 description 7
• 230000000694 effects Effects 0.000 description 6
• 239000007864 aqueous solution Substances 0.000 description 5
• 230000015572 biosynthetic process Effects 0.000 description 5
• 238000000151 deposition Methods 0.000 description 5
• 238000010586 diagram Methods 0.000 description 5
• 150000002500 ions Chemical class 0.000 description 5
• 239000012299 nitrogen atmosphere Substances 0.000 description 5
• 230000003071 parasitic effect Effects 0.000 description 5
• OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
• 230000003647 oxidation Effects 0.000 description 4
• 238000007254 oxidation reaction Methods 0.000 description 4
• 238000002161 passivation Methods 0.000 description 4
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
• 238000007796 conventional method Methods 0.000 description 3
• 238000009792 diffusion process Methods 0.000 description 3
• 239000001301 oxygen Substances 0.000 description 3
• 229910052760 oxygen Inorganic materials 0.000 description 3
• 229910052710 silicon Inorganic materials 0.000 description 3
• NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
• 238000005229 chemical vapour deposition Methods 0.000 description 2
• 230000006866 deterioration Effects 0.000 description 2
• 238000001312 dry etching Methods 0.000 description 2
• 238000000605 extraction Methods 0.000 description 2
• 239000007789 gas Substances 0.000 description 2
• KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
• 230000035515 penetration Effects 0.000 description 2
• 239000000243 solution Substances 0.000 description 2
• VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
• KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
• 229910020968 MoSi2 Inorganic materials 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 239000012670 alkaline solution Substances 0.000 description 1
• 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
• 239000000908 ammonium hydroxide Substances 0.000 description 1
• QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000010354 integration Effects 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
• 239000000203 mixture Substances 0.000 description 1
• 230000001443 photoexcitation Effects 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1