JPH0575184B2 - - Google Patents
Info
- Publication number
- JPH0575184B2 JPH0575184B2 JP62228252A JP22825287A JPH0575184B2 JP H0575184 B2 JPH0575184 B2 JP H0575184B2 JP 62228252 A JP62228252 A JP 62228252A JP 22825287 A JP22825287 A JP 22825287A JP H0575184 B2 JPH0575184 B2 JP H0575184B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- silicon substrate
- amorphous silicon
- polysilicon
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228252A JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228252A JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6472551A JPS6472551A (en) | 1989-03-17 |
JPH0575184B2 true JPH0575184B2 (enrdf_load_stackoverflow) | 1993-10-20 |
Family
ID=16873554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228252A Granted JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472551A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6469345B2 (en) | 2000-01-14 | 2002-10-22 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US6482701B1 (en) | 1999-08-04 | 2002-11-19 | Denso Corporation | Integrated gate bipolar transistor and method of manufacturing the same |
US6521538B2 (en) | 2000-02-28 | 2003-02-18 | Denso Corporation | Method of forming a trench with a rounded bottom in a semiconductor device |
US6864532B2 (en) | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6309924B1 (en) * | 2000-06-02 | 2001-10-30 | International Business Machines Corporation | Method of forming self-limiting polysilicon LOCOS for DRAM cell |
JP2003095554A (ja) * | 2001-09-26 | 2003-04-03 | Toshiba Elevator Co Ltd | エレベータのかご上安全装置 |
WO2005083781A1 (en) | 2004-01-30 | 2005-09-09 | International Business Machines Corporation | Folded node trench capacitor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60223153A (ja) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Mis型キャパシタを有する半導体装置の製法 |
-
1987
- 1987-09-14 JP JP62228252A patent/JPS6472551A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482701B1 (en) | 1999-08-04 | 2002-11-19 | Denso Corporation | Integrated gate bipolar transistor and method of manufacturing the same |
US6469345B2 (en) | 2000-01-14 | 2002-10-22 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US6864532B2 (en) | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US7354829B2 (en) | 2000-01-14 | 2008-04-08 | Denso Corporation | Trench-gate transistor with ono gate dielectric and fabrication process therefor |
US6521538B2 (en) | 2000-02-28 | 2003-02-18 | Denso Corporation | Method of forming a trench with a rounded bottom in a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6472551A (en) | 1989-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |