JPH0575184B2 - - Google Patents

Info

Publication number
JPH0575184B2
JPH0575184B2 JP62228252A JP22825287A JPH0575184B2 JP H0575184 B2 JPH0575184 B2 JP H0575184B2 JP 62228252 A JP62228252 A JP 62228252A JP 22825287 A JP22825287 A JP 22825287A JP H0575184 B2 JPH0575184 B2 JP H0575184B2
Authority
JP
Japan
Prior art keywords
trench
silicon substrate
amorphous silicon
polysilicon
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62228252A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6472551A (en
Inventor
Toshihiko Usu
Seiichi Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62228252A priority Critical patent/JPS6472551A/ja
Publication of JPS6472551A publication Critical patent/JPS6472551A/ja
Publication of JPH0575184B2 publication Critical patent/JPH0575184B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP62228252A 1987-09-14 1987-09-14 Manufacture of trench capacitor Granted JPS6472551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228252A JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228252A JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Publications (2)

Publication Number Publication Date
JPS6472551A JPS6472551A (en) 1989-03-17
JPH0575184B2 true JPH0575184B2 (enrdf_load_stackoverflow) 1993-10-20

Family

ID=16873554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228252A Granted JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Country Status (1)

Country Link
JP (1) JPS6472551A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469345B2 (en) 2000-01-14 2002-10-22 Denso Corporation Semiconductor device and method for manufacturing the same
US6482701B1 (en) 1999-08-04 2002-11-19 Denso Corporation Integrated gate bipolar transistor and method of manufacturing the same
US6521538B2 (en) 2000-02-28 2003-02-18 Denso Corporation Method of forming a trench with a rounded bottom in a semiconductor device
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309924B1 (en) * 2000-06-02 2001-10-30 International Business Machines Corporation Method of forming self-limiting polysilicon LOCOS for DRAM cell
JP2003095554A (ja) * 2001-09-26 2003-04-03 Toshiba Elevator Co Ltd エレベータのかご上安全装置
US7504299B2 (en) 2004-01-30 2009-03-17 International Business Machines Corporation Folded node trench capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223153A (ja) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型キャパシタを有する半導体装置の製法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482701B1 (en) 1999-08-04 2002-11-19 Denso Corporation Integrated gate bipolar transistor and method of manufacturing the same
US6469345B2 (en) 2000-01-14 2002-10-22 Denso Corporation Semiconductor device and method for manufacturing the same
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same
US7354829B2 (en) 2000-01-14 2008-04-08 Denso Corporation Trench-gate transistor with ono gate dielectric and fabrication process therefor
US6521538B2 (en) 2000-02-28 2003-02-18 Denso Corporation Method of forming a trench with a rounded bottom in a semiconductor device

Also Published As

Publication number Publication date
JPS6472551A (en) 1989-03-17

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees