JPH0574934B2 - - Google Patents

Info

Publication number
JPH0574934B2
JPH0574934B2 JP60004595A JP459585A JPH0574934B2 JP H0574934 B2 JPH0574934 B2 JP H0574934B2 JP 60004595 A JP60004595 A JP 60004595A JP 459585 A JP459585 A JP 459585A JP H0574934 B2 JPH0574934 B2 JP H0574934B2
Authority
JP
Japan
Prior art keywords
impurity
layer
mask
region
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60004595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61163666A (ja
Inventor
Kimyoshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60004595A priority Critical patent/JPS61163666A/ja
Publication of JPS61163666A publication Critical patent/JPS61163666A/ja
Publication of JPH0574934B2 publication Critical patent/JPH0574934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60004595A 1985-01-14 1985-01-14 電界効果トランジスタの製法 Granted JPS61163666A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60004595A JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60004595A JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Publications (2)

Publication Number Publication Date
JPS61163666A JPS61163666A (ja) 1986-07-24
JPH0574934B2 true JPH0574934B2 (enExample) 1993-10-19

Family

ID=11588393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60004595A Granted JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Country Status (1)

Country Link
JP (1) JPS61163666A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920005128B1 (ko) * 1989-12-27 1992-06-26 재단법인 한국전자통신연구소 접합형 전계효과 트랜지스터 제조방법
US5116772A (en) * 1990-12-26 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transisor
JP3012928U (ja) * 1994-12-26 1995-06-27 秦運動具工業株式会社 筋力トレーニング用チューブ

Also Published As

Publication number Publication date
JPS61163666A (ja) 1986-07-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term