JPS61163666A - 電界効果トランジスタの製法 - Google Patents
電界効果トランジスタの製法Info
- Publication number
- JPS61163666A JPS61163666A JP60004595A JP459585A JPS61163666A JP S61163666 A JPS61163666 A JP S61163666A JP 60004595 A JP60004595 A JP 60004595A JP 459585 A JP459585 A JP 459585A JP S61163666 A JPS61163666 A JP S61163666A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- layer
- mask
- region
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60004595A JPS61163666A (ja) | 1985-01-14 | 1985-01-14 | 電界効果トランジスタの製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60004595A JPS61163666A (ja) | 1985-01-14 | 1985-01-14 | 電界効果トランジスタの製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61163666A true JPS61163666A (ja) | 1986-07-24 |
| JPH0574934B2 JPH0574934B2 (enExample) | 1993-10-19 |
Family
ID=11588393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60004595A Granted JPS61163666A (ja) | 1985-01-14 | 1985-01-14 | 電界効果トランジスタの製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61163666A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5116772A (en) * | 1990-12-26 | 1992-05-26 | Electronics And Telecommunications Research Institute | Method for manufacturing a junction field effect transisor |
| US5116773A (en) * | 1989-12-27 | 1992-05-26 | Electronics And Telecommunications Research Institute | Method for manufacturing a junction field effect transistor |
| JP3012928U (ja) * | 1994-12-26 | 1995-06-27 | 秦運動具工業株式会社 | 筋力トレーニング用チューブ |
-
1985
- 1985-01-14 JP JP60004595A patent/JPS61163666A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5116773A (en) * | 1989-12-27 | 1992-05-26 | Electronics And Telecommunications Research Institute | Method for manufacturing a junction field effect transistor |
| US5116772A (en) * | 1990-12-26 | 1992-05-26 | Electronics And Telecommunications Research Institute | Method for manufacturing a junction field effect transisor |
| JP3012928U (ja) * | 1994-12-26 | 1995-06-27 | 秦運動具工業株式会社 | 筋力トレーニング用チューブ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574934B2 (enExample) | 1993-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |