JPS61163666A - 電界効果トランジスタの製法 - Google Patents

電界効果トランジスタの製法

Info

Publication number
JPS61163666A
JPS61163666A JP60004595A JP459585A JPS61163666A JP S61163666 A JPS61163666 A JP S61163666A JP 60004595 A JP60004595 A JP 60004595A JP 459585 A JP459585 A JP 459585A JP S61163666 A JPS61163666 A JP S61163666A
Authority
JP
Japan
Prior art keywords
impurity
layer
mask
region
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60004595A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574934B2 (enExample
Inventor
Kimiyoshi Yamazaki
王義 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60004595A priority Critical patent/JPS61163666A/ja
Publication of JPS61163666A publication Critical patent/JPS61163666A/ja
Publication of JPH0574934B2 publication Critical patent/JPH0574934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149Source or drain regions of field-effect devices
    • H10D62/161Source or drain regions of field-effect devices of FETs having Schottky gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60004595A 1985-01-14 1985-01-14 電界効果トランジスタの製法 Granted JPS61163666A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60004595A JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60004595A JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Publications (2)

Publication Number Publication Date
JPS61163666A true JPS61163666A (ja) 1986-07-24
JPH0574934B2 JPH0574934B2 (enExample) 1993-10-19

Family

ID=11588393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60004595A Granted JPS61163666A (ja) 1985-01-14 1985-01-14 電界効果トランジスタの製法

Country Status (1)

Country Link
JP (1) JPS61163666A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116772A (en) * 1990-12-26 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transisor
US5116773A (en) * 1989-12-27 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transistor
JP3012928U (ja) * 1994-12-26 1995-06-27 秦運動具工業株式会社 筋力トレーニング用チューブ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116773A (en) * 1989-12-27 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transistor
US5116772A (en) * 1990-12-26 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transisor
JP3012928U (ja) * 1994-12-26 1995-06-27 秦運動具工業株式会社 筋力トレーニング用チューブ

Also Published As

Publication number Publication date
JPH0574934B2 (enExample) 1993-10-19

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