JPH0571193B2 - - Google Patents

Info

Publication number
JPH0571193B2
JPH0571193B2 JP62143131A JP14313187A JPH0571193B2 JP H0571193 B2 JPH0571193 B2 JP H0571193B2 JP 62143131 A JP62143131 A JP 62143131A JP 14313187 A JP14313187 A JP 14313187A JP H0571193 B2 JPH0571193 B2 JP H0571193B2
Authority
JP
Japan
Prior art keywords
film
plane
thin film
poly
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62143131A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63307776A (ja
Inventor
Takashi Aoyama
Saburo Oikawa
Yoshiaki Okajima
Nobutake Konishi
Genshiro Kawachi
Hidemi Adachi
Takaya Suzuki
Kenji Myata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62143131A priority Critical patent/JPS63307776A/ja
Priority to US07/203,935 priority patent/US5153702A/en
Priority to KR1019880006942A priority patent/KR970004836B1/ko
Publication of JPS63307776A publication Critical patent/JPS63307776A/ja
Publication of JPH0571193B2 publication Critical patent/JPH0571193B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP62143131A 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法 Granted JPS63307776A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62143131A JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法
US07/203,935 US5153702A (en) 1987-06-10 1988-06-08 Thin film semiconductor device and method for fabricating the same
KR1019880006942A KR970004836B1 (ko) 1987-06-10 1988-06-10 박막반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62143131A JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP30051994A Division JP2791286B2 (ja) 1994-12-05 1994-12-05 半導体装置
JP27582396A Division JP2716036B2 (ja) 1996-10-18 1996-10-18 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63307776A JPS63307776A (ja) 1988-12-15
JPH0571193B2 true JPH0571193B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-10-06

Family

ID=15331635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62143131A Granted JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS63307776A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320084A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 薄膜トランジスタの製造方法
CN100483651C (zh) 1992-08-27 2009-04-29 株式会社半导体能源研究所 半导体器件的制造方法
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
TW295703B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132191A (en) * 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
JPS5884464A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
JPH0666395B2 (ja) * 1983-05-24 1994-08-24 セイコーエプソン株式会社 薄膜半導体の製造方法
JPS61160925A (ja) * 1985-01-09 1986-07-21 Nec Corp Ｓｏｉ結晶成長方法
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JP2622635B2 (ja) * 1991-08-02 1997-06-18 宇部興産株式会社 竪型粉砕機

Also Published As

Publication number Publication date
JPS63307776A (ja) 1988-12-15

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