JPH0571176B2 - - Google Patents
Info
- Publication number
- JPH0571176B2 JPH0571176B2 JP11559387A JP11559387A JPH0571176B2 JP H0571176 B2 JPH0571176 B2 JP H0571176B2 JP 11559387 A JP11559387 A JP 11559387A JP 11559387 A JP11559387 A JP 11559387A JP H0571176 B2 JPH0571176 B2 JP H0571176B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- drain
- region
- source
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 230000005669 field effect Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000008018 melting Effects 0.000 description 18
- 238000002844 melting Methods 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11559387A JPS63280462A (ja) | 1987-05-12 | 1987-05-12 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11559387A JPS63280462A (ja) | 1987-05-12 | 1987-05-12 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63280462A JPS63280462A (ja) | 1988-11-17 |
| JPH0571176B2 true JPH0571176B2 (enrdf_load_html_response) | 1993-10-06 |
Family
ID=14666446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11559387A Granted JPS63280462A (ja) | 1987-05-12 | 1987-05-12 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63280462A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2553690B2 (ja) * | 1989-02-13 | 1996-11-13 | 三菱電機株式会社 | 非対称構造ｆｅｔの製造方法 |
| JP2786307B2 (ja) * | 1990-04-19 | 1998-08-13 | 三菱電機株式会社 | 電界効果トランジスタ及びその製造方法 |
-
1987
- 1987-05-12 JP JP11559387A patent/JPS63280462A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63280462A (ja) | 1988-11-17 |
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