JPH0568105B2 - - Google Patents

Info

Publication number
JPH0568105B2
JPH0568105B2 JP59123918A JP12391884A JPH0568105B2 JP H0568105 B2 JPH0568105 B2 JP H0568105B2 JP 59123918 A JP59123918 A JP 59123918A JP 12391884 A JP12391884 A JP 12391884A JP H0568105 B2 JPH0568105 B2 JP H0568105B2
Authority
JP
Japan
Prior art keywords
memory
data
layer
light
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59123918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS613450A (ja
Inventor
Zenko Hirose
Masamichi Yamanishi
Yukio Oosaka
Tadashi Ae
Tadao Ichikawa
Noryoshi Yoshida
Ikuo Suemune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hiroshima University NUC
Original Assignee
Hiroshima University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hiroshima University NUC filed Critical Hiroshima University NUC
Priority to JP59123918A priority Critical patent/JPS613450A/ja
Priority to US06/702,139 priority patent/US4672577A/en
Publication of JPS613450A publication Critical patent/JPS613450A/ja
Publication of JPH0568105B2 publication Critical patent/JPH0568105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/42—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Multi Processors (AREA)
  • Memory System (AREA)
JP59123918A 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置 Granted JPS613450A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59123918A JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置
US06/702,139 US4672577A (en) 1984-06-18 1985-02-15 Three-dimensional integrated circuit with optically coupled shared memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59123918A JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置

Publications (2)

Publication Number Publication Date
JPS613450A JPS613450A (ja) 1986-01-09
JPH0568105B2 true JPH0568105B2 (enExample) 1993-09-28

Family

ID=14872561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59123918A Granted JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置

Country Status (2)

Country Link
US (1) US4672577A (enExample)
JP (1) JPS613450A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004507020A (ja) * 2000-08-14 2004-03-04 マトリックス　セミコンダクター　インコーポレイテッド モジュラーメモリデバイス

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748203B2 (ja) * 1988-06-17 1995-05-24 三菱電機株式会社 ３次元デバイスを用いた正方行列乗算器
JPH0215679A (ja) * 1988-07-04 1990-01-19 Ricoh Co Ltd 実装方法
JPH0748206B2 (ja) * 1989-03-07 1995-05-24 工業技術院長 集積回路装置
WO1991011027A1 (en) * 1990-01-16 1991-07-25 Iowa State University Research Foundation, Inc. Non-crystalline silicon active device for large-scale digital and analog networks
US5280184A (en) * 1992-04-08 1994-01-18 Georgia Tech Research Corporation Three dimensional integrated circuits with lift-off
WO1993021663A1 (en) * 1992-04-08 1993-10-28 Georgia Tech Research Corporation Process for lift-off of thin film materials from a growth substrate
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP2000231546A (ja) 1999-02-12 2000-08-22 Univ Hiroshima 共有メモリ
JP3643864B2 (ja) 1999-05-18 2005-04-27 国立大学法人広島大学 酸化膜の角で生じるキャリヤのディープレベル捕獲を利用した不揮発性メモリ
JP4334173B2 (ja) * 1999-07-06 2009-09-30 三菱電機株式会社 駆動制御システム
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
KR100821456B1 (ko) 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US7352199B2 (en) 2001-02-20 2008-04-01 Sandisk Corporation Memory card with enhanced testability and methods of making and using the same
US6897514B2 (en) 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6843421B2 (en) 2001-08-13 2005-01-18 Matrix Semiconductor, Inc. Molded memory module and method of making the module absent a substrate support
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6731011B2 (en) 2002-02-19 2004-05-04 Matrix Semiconductor, Inc. Memory module having interconnected and stacked integrated circuits
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
JP5024530B2 (ja) * 2007-05-08 2012-09-12 大学共同利用機関法人情報・システム研究機構 三次元集積電気回路の配線構造及びそのレイアウト方法
US8907392B2 (en) * 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106181A (en) * 1980-12-24 1982-07-01 Toshiba Corp Integrated circuit
JPH0664606B2 (ja) * 1982-06-11 1994-08-22 ソニー株式会社 画像処理装置
JPS5950583A (ja) * 1982-09-16 1984-03-23 Fujitsu Ltd 半導体装置
US4603401A (en) * 1984-04-17 1986-07-29 University Of Pittsburgh Apparatus and method for infrared imaging

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004507020A (ja) * 2000-08-14 2004-03-04 マトリックス　セミコンダクター　インコーポレイテッド モジュラーメモリデバイス

Also Published As

Publication number Publication date
US4672577A (en) 1987-06-09
JPS613450A (ja) 1986-01-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term