JPS613450A - 三次元光結合共有メモリ集積装置 - Google Patents

三次元光結合共有メモリ集積装置

Info

Publication number
JPS613450A
JPS613450A JP59123918A JP12391884A JPS613450A JP S613450 A JPS613450 A JP S613450A JP 59123918 A JP59123918 A JP 59123918A JP 12391884 A JP12391884 A JP 12391884A JP S613450 A JPS613450 A JP S613450A
Authority
JP
Japan
Prior art keywords
layer
memory
light
integrated
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59123918A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568105B2 (enExample
Inventor
Zenko Hirose
広瀬　全孝
Masamichi Yamanishi
正道 山西
Yukio Osaka
大坂　之雄
Tadashi Ae
阿江　忠
Tadao Ichikawa
忠男 市川
Noriyoshi Yoshida
吉田　典可
Ikuo Suemune
幾夫 末宗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hiroshima University NUC
Original Assignee
Hiroshima University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hiroshima University NUC filed Critical Hiroshima University NUC
Priority to JP59123918A priority Critical patent/JPS613450A/ja
Priority to US06/702,139 priority patent/US4672577A/en
Publication of JPS613450A publication Critical patent/JPS613450A/ja
Publication of JPH0568105B2 publication Critical patent/JPH0568105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/42—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Multi Processors (AREA)
  • Memory System (AREA)
JP59123918A 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置 Granted JPS613450A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59123918A JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置
US06/702,139 US4672577A (en) 1984-06-18 1985-02-15 Three-dimensional integrated circuit with optically coupled shared memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59123918A JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置

Publications (2)

Publication Number Publication Date
JPS613450A true JPS613450A (ja) 1986-01-09
JPH0568105B2 JPH0568105B2 (enExample) 1993-09-28

Family

ID=14872561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59123918A Granted JPS613450A (ja) 1984-06-18 1984-06-18 三次元光結合共有メモリ集積装置

Country Status (2)

Country Link
US (1) US4672577A (enExample)
JP (1) JPS613450A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01316872A (ja) * 1988-06-17 1989-12-21 Mitsubishi Electric Corp ３次元デバイスを用いた正方行列乗算器
JPH02232765A (ja) * 1989-03-07 1990-09-14 Agency Of Ind Science & Technol 集積回路装置
US6563163B1 (en) 1999-05-18 2003-05-13 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
US6874068B1 (en) 1999-02-12 2005-03-29 Hiroshima University Shared memory
JP2008282108A (ja) * 2007-05-08 2008-11-20 Research Organization Of Information & Systems 三次元集積電気回路の配線構造及びそのレイアウト方法
JP2021064806A (ja) * 2011-12-22 2021-04-22 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215679A (ja) * 1988-07-04 1990-01-19 Ricoh Co Ltd 実装方法
WO1991011027A1 (en) * 1990-01-16 1991-07-25 Iowa State University Research Foundation, Inc. Non-crystalline silicon active device for large-scale digital and analog networks
US5280184A (en) * 1992-04-08 1994-01-18 Georgia Tech Research Corporation Three dimensional integrated circuits with lift-off
WO1993021663A1 (en) * 1992-04-08 1993-10-28 Georgia Tech Research Corporation Process for lift-off of thin film materials from a growth substrate
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP4334173B2 (ja) * 1999-07-06 2009-09-30 三菱電機株式会社 駆動制御システム
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
KR100821456B1 (ko) 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US6545891B1 (en) * 2000-08-14 2003-04-08 Matrix Semiconductor, Inc. Modular memory device
US7352199B2 (en) 2001-02-20 2008-04-01 Sandisk Corporation Memory card with enhanced testability and methods of making and using the same
US6897514B2 (en) 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6843421B2 (en) 2001-08-13 2005-01-18 Matrix Semiconductor, Inc. Molded memory module and method of making the module absent a substrate support
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6731011B2 (en) 2002-02-19 2004-05-04 Matrix Semiconductor, Inc. Memory module having interconnected and stacked integrated circuits
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106181A (en) * 1980-12-24 1982-07-01 Toshiba Corp Integrated circuit
JPS58217072A (ja) * 1982-06-11 1983-12-16 Sony Corp 画像処理装置
JPS5950583A (ja) * 1982-09-16 1984-03-23 Fujitsu Ltd 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603401A (en) * 1984-04-17 1986-07-29 University Of Pittsburgh Apparatus and method for infrared imaging

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106181A (en) * 1980-12-24 1982-07-01 Toshiba Corp Integrated circuit
JPS58217072A (ja) * 1982-06-11 1983-12-16 Sony Corp 画像処理装置
JPS5950583A (ja) * 1982-09-16 1984-03-23 Fujitsu Ltd 半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01316872A (ja) * 1988-06-17 1989-12-21 Mitsubishi Electric Corp ３次元デバイスを用いた正方行列乗算器
JPH02232765A (ja) * 1989-03-07 1990-09-14 Agency Of Ind Science & Technol 集積回路装置
US6874068B1 (en) 1999-02-12 2005-03-29 Hiroshima University Shared memory
US6563163B1 (en) 1999-05-18 2003-05-13 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
JP2008282108A (ja) * 2007-05-08 2008-11-20 Research Organization Of Information & Systems 三次元集積電気回路の配線構造及びそのレイアウト方法
JP2021064806A (ja) * 2011-12-22 2021-04-22 株式会社半導体エネルギー研究所 半導体装置
JP2022088391A (ja) * 2011-12-22 2022-06-14 株式会社半導体エネルギー研究所 半導体装置
JP2023110044A (ja) * 2011-12-22 2023-08-08 株式会社半導体エネルギー研究所 半導体装置
JP2024123197A (ja) * 2011-12-22 2024-09-10 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0568105B2 (enExample) 1993-09-28
US4672577A (en) 1987-06-09

Similar Documents

Publication Publication Date Title
JPS613450A (ja) 三次元光結合共有メモリ集積装置
KR20250051631A (ko) 표시 장치 및 그 제조 방법
US5486708A (en) Light valve device using semiconductive composite substrate
JPH10261786A (ja) 量子効果装置及び半導体複合基板
TW201705563A (zh) 具有包含低介電常數互連之邏輯裝置的集成磁性隨機存取記憶體
KR20050112644A (ko) 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
JPH0221654A (ja) スタティックランダムアクセスメモリ装置
CN212625587U (zh) 显示基板和显示装置
WO2022165913A1 (zh) 阵列基板和显示面板
CN1005946B (zh) 电子器件及其制造方法
JPH04259249A (ja) 半導体装置
WO2001048547A1 (en) Tft array substrate, method of manufacture thereof, and lcd with tft array substrate
JPS6243166A (ja) イメ−ジセンサの製法及び該製法によつて得られるリニアイメ−ジセンサ
JPH01120858A (ja) 集積回路装置
WO2022052681A1 (zh) 显示基板及其制造方法和显示装置
JPH046106B2 (enExample)
TWI569430B (zh) 感測裝置
KR100495793B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판 및 제조 방법
KR20180129718A (ko) 유기 발광 표시 장치
JPS58190064A (ja) 半導体集積回路
JPS5922360A (ja) 光入力モス型トランジスタ
JP2798772B2 (ja) 光起電力装置の製造方法
KR20020072772A (ko) 엑스레이 영상 감지소자 및 그 제조방법
Kataoka Three-dimensional integrated sensors
JPH02299259A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term