JPH0561240B2 - - Google Patents
Info
- Publication number
- JPH0561240B2 JPH0561240B2 JP60261351A JP26135185A JPH0561240B2 JP H0561240 B2 JPH0561240 B2 JP H0561240B2 JP 60261351 A JP60261351 A JP 60261351A JP 26135185 A JP26135185 A JP 26135185A JP H0561240 B2 JPH0561240 B2 JP H0561240B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- oxidation
- single crystal
- silicon single
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 description 24
- 238000007254 oxidation reaction Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 19
- 230000000694 effects Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 238000011282 treatment Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26135185A JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26135185A JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6232516A Division JP2652344B2 (ja) | 1994-09-02 | 1994-09-02 | シリコンウエーハ |
JP6234476A Division JP2652346B2 (ja) | 1994-09-05 | 1994-09-05 | シリコンウエーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62123098A JPS62123098A (ja) | 1987-06-04 |
JPH0561240B2 true JPH0561240B2 (zh) | 1993-09-03 |
Family
ID=17360634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26135185A Granted JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62123098A (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183825A (ja) * | 1988-01-19 | 1989-07-21 | Sanyo Electric Co Ltd | 単結晶シリコン膜の形成方法 |
JP2571972B2 (ja) * | 1990-02-08 | 1997-01-16 | 三菱マテリアル株式会社 | シリコンウエーハの製造方法 |
US5128954A (en) * | 1990-12-14 | 1992-07-07 | Hughes Aircraft Company | Impregnation of a solid from the gas phase |
JP2613498B2 (ja) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Si単結晶ウエーハの熱処理方法 |
EP1043768B1 (en) * | 1992-01-30 | 2004-09-08 | Canon Kabushiki Kaisha | Process for producing semiconductor substrates |
JP3762144B2 (ja) | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Soi基板の作製方法 |
KR20010083771A (ko) | 1998-12-28 | 2001-09-01 | 와다 다다시 | 실리콘 웨이퍼의 열처리 방법 및 실리콘 웨이퍼 |
JP5052728B2 (ja) * | 2002-03-05 | 2012-10-17 | 株式会社Sumco | シリコン単結晶層の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134071A (en) * | 1975-05-16 | 1976-11-20 | Nippon Denshi Kinzoku Kk | Method to eliminate crystal defects of silicon |
JPS5885534A (ja) * | 1981-11-18 | 1983-05-21 | Komatsu Denshi Kinzoku Kk | 半導体シリコン基板の製造法 |
JPS58164229A (ja) * | 1982-03-25 | 1983-09-29 | Sony Corp | 半導体基板処理法 |
JPS59202640A (ja) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | 半導体ウエハの処理方法 |
-
1985
- 1985-11-22 JP JP26135185A patent/JPS62123098A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134071A (en) * | 1975-05-16 | 1976-11-20 | Nippon Denshi Kinzoku Kk | Method to eliminate crystal defects of silicon |
JPS5885534A (ja) * | 1981-11-18 | 1983-05-21 | Komatsu Denshi Kinzoku Kk | 半導体シリコン基板の製造法 |
JPS58164229A (ja) * | 1982-03-25 | 1983-09-29 | Sony Corp | 半導体基板処理法 |
JPS59202640A (ja) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | 半導体ウエハの処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS62123098A (ja) | 1987-06-04 |
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