JPH0561240B2 - - Google Patents

Info

Publication number
JPH0561240B2
JPH0561240B2 JP60261351A JP26135185A JPH0561240B2 JP H0561240 B2 JPH0561240 B2 JP H0561240B2 JP 60261351 A JP60261351 A JP 60261351A JP 26135185 A JP26135185 A JP 26135185A JP H0561240 B2 JPH0561240 B2 JP H0561240B2
Authority
JP
Japan
Prior art keywords
gas
oxidation
single crystal
silicon single
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60261351A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62123098A (ja
Inventor
Hiroshi Shirai
Norihei Takai
Yoshio Kirino
Kenji Akai
Takeshi Kon
Hiromitsu Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP26135185A priority Critical patent/JPS62123098A/ja
Publication of JPS62123098A publication Critical patent/JPS62123098A/ja
Publication of JPH0561240B2 publication Critical patent/JPH0561240B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP26135185A 1985-11-22 1985-11-22 シリコン単結晶の製造方法 Granted JPS62123098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26135185A JPS62123098A (ja) 1985-11-22 1985-11-22 シリコン単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26135185A JPS62123098A (ja) 1985-11-22 1985-11-22 シリコン単結晶の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6232516A Division JP2652344B2 (ja) 1994-09-02 1994-09-02 シリコンウエーハ
JP6234476A Division JP2652346B2 (ja) 1994-09-05 1994-09-05 シリコンウエーハの製造方法

Publications (2)

Publication Number Publication Date
JPS62123098A JPS62123098A (ja) 1987-06-04
JPH0561240B2 true JPH0561240B2 (en:Method) 1993-09-03

Family

ID=17360634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26135185A Granted JPS62123098A (ja) 1985-11-22 1985-11-22 シリコン単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS62123098A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183825A (ja) * 1988-01-19 1989-07-21 Sanyo Electric Co Ltd 単結晶シリコン膜の形成方法
JP2571972B2 (ja) * 1990-02-08 1997-01-16 三菱マテリアル株式会社 シリコンウエーハの製造方法
US5128954A (en) * 1990-12-14 1992-07-07 Hughes Aircraft Company Impregnation of a solid from the gas phase
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
DE69333619T2 (de) * 1992-01-30 2005-09-29 Canon K.K. Herstellungsverfahren für Halbleitersubstrate
JP3762144B2 (ja) 1998-06-18 2006-04-05 キヤノン株式会社 Ｓｏｉ基板の作製方法
EP1061565A1 (en) 1998-12-28 2000-12-20 Shin-Etsu Handotai Co., Ltd Method for thermally annealing silicon wafer and silicon wafer
JP5052728B2 (ja) * 2002-03-05 2012-10-17 株式会社Ｓｕｍｃｏ シリコン単結晶層の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134071A (en) * 1975-05-16 1976-11-20 Nippon Denshi Kinzoku Kk Method to eliminate crystal defects of silicon
JPS5885534A (ja) * 1981-11-18 1983-05-21 Komatsu Denshi Kinzoku Kk 半導体シリコン基板の製造法
JPS58164229A (ja) * 1982-03-25 1983-09-29 Sony Corp 半導体基板処理法
JPS59202640A (ja) * 1983-05-02 1984-11-16 Toshiba Corp 半導体ウエハの処理方法

Also Published As

Publication number Publication date
JPS62123098A (ja) 1987-06-04

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