JPH0554262B2 - - Google Patents
Info
- Publication number
- JPH0554262B2 JPH0554262B2 JP23333084A JP23333084A JPH0554262B2 JP H0554262 B2 JPH0554262 B2 JP H0554262B2 JP 23333084 A JP23333084 A JP 23333084A JP 23333084 A JP23333084 A JP 23333084A JP H0554262 B2 JPH0554262 B2 JP H0554262B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- adhesive sheet
- adhesive layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000012779 reinforcing material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Dicing (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59233330A JPS61112345A (ja) | 1984-11-07 | 1984-11-07 | 半導体装置の製造方法 |
EP85114207A EP0182218B1 (en) | 1984-11-07 | 1985-11-07 | Method for dicing semiconductor wafer |
DE8585114207T DE3583111D1 (de) | 1984-11-07 | 1985-11-07 | Verfahren zum schneiden von halbleiterscheiben. |
US07/015,585 US4722130A (en) | 1984-11-07 | 1987-02-17 | Method of manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59233330A JPS61112345A (ja) | 1984-11-07 | 1984-11-07 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61112345A JPS61112345A (ja) | 1986-05-30 |
JPH0554262B2 true JPH0554262B2 (US20080005853A1-20080110-C00027.png) | 1993-08-12 |
Family
ID=16953451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59233330A Granted JPS61112345A (ja) | 1984-11-07 | 1984-11-07 | 半導体装置の製造方法 |
Country Status (4)
Cited By (1)
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Also Published As
Publication number | Publication date |
---|---|
EP0182218A3 (en) | 1988-06-22 |
DE3583111D1 (de) | 1991-07-11 |
EP0182218B1 (en) | 1991-06-05 |
EP0182218A2 (en) | 1986-05-28 |
US4722130A (en) | 1988-02-02 |
JPS61112345A (ja) | 1986-05-30 |
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