JPH055191B2 - - Google Patents

Info

Publication number
JPH055191B2
JPH055191B2 JP2294785A JP2294785A JPH055191B2 JP H055191 B2 JPH055191 B2 JP H055191B2 JP 2294785 A JP2294785 A JP 2294785A JP 2294785 A JP2294785 A JP 2294785A JP H055191 B2 JPH055191 B2 JP H055191B2
Authority
JP
Japan
Prior art keywords
cladding layer
active layer
layer
compound semiconductor
mixed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2294785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61183977A (ja
Inventor
Tetsuo Sekiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60022947A priority Critical patent/JPS61183977A/ja
Publication of JPS61183977A publication Critical patent/JPS61183977A/ja
Publication of JPH055191B2 publication Critical patent/JPH055191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP60022947A 1985-02-08 1985-02-08 発光素子及びその製造方法 Granted JPS61183977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60022947A JPS61183977A (ja) 1985-02-08 1985-02-08 発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60022947A JPS61183977A (ja) 1985-02-08 1985-02-08 発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61183977A JPS61183977A (ja) 1986-08-16
JPH055191B2 true JPH055191B2 (zh) 1993-01-21

Family

ID=12096813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60022947A Granted JPS61183977A (ja) 1985-02-08 1985-02-08 発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61183977A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211970A (ja) * 1986-03-13 1987-09-17 Sanyo Electric Co Ltd 発光ダイオ−ド
JPS63278383A (ja) * 1987-05-11 1988-11-16 Toshiba Corp 発光素子
JP2681352B2 (ja) * 1987-07-31 1997-11-26 信越半導体 株式会社 発光半導体素子
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
JP2783580B2 (ja) * 1989-03-08 1998-08-06 株式会社東芝 ダブルヘテロ型赤外光発光素子
JP2818312B2 (ja) * 1990-04-18 1998-10-30 株式会社東芝 発光素子
JP2560964B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (zh) * 1974-05-28 1975-12-18
JPS5563887A (en) * 1978-11-06 1980-05-14 Nec Corp Light-emitting diode
JPS56111275A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS5958878A (ja) * 1982-09-28 1984-04-04 Matsushita Electric Ind Co Ltd 半導体発光装置
JPS59225580A (ja) * 1983-06-06 1984-12-18 Hitachi Ltd 半導体発光ダイオ−ドおよびその製造方法
JPS604277A (ja) * 1983-06-22 1985-01-10 Nec Corp 発光ダイオ−ド

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (zh) * 1974-05-28 1975-12-18
JPS5563887A (en) * 1978-11-06 1980-05-14 Nec Corp Light-emitting diode
JPS56111275A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS5958878A (ja) * 1982-09-28 1984-04-04 Matsushita Electric Ind Co Ltd 半導体発光装置
JPS59225580A (ja) * 1983-06-06 1984-12-18 Hitachi Ltd 半導体発光ダイオ−ドおよびその製造方法
JPS604277A (ja) * 1983-06-22 1985-01-10 Nec Corp 発光ダイオ−ド

Also Published As

Publication number Publication date
JPS61183977A (ja) 1986-08-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term