JPH05508741A - 耐湿性保護キャップ層を有するsog - Google Patents
耐湿性保護キャップ層を有するsogInfo
- Publication number
- JPH05508741A JPH05508741A JP91509687A JP50968791A JPH05508741A JP H05508741 A JPH05508741 A JP H05508741A JP 91509687 A JP91509687 A JP 91509687A JP 50968791 A JP50968791 A JP 50968791A JP H05508741 A JPH05508741 A JP H05508741A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sog
- glass
- dielectric
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 72
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- 229910001868 water Inorganic materials 0.000 claims description 61
- 238000000151 deposition Methods 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 28
- 238000005247 gettering Methods 0.000 claims description 28
- 235000012431 wafers Nutrition 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 15
- 238000011065 in-situ storage Methods 0.000 claims description 14
- 238000010943 off-gassing Methods 0.000 claims description 13
- 239000006227 byproduct Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 4
- -1 silicon fluoride nitride Chemical class 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000001182 laser chemical vapour deposition Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- DJHGAFSJWGLOIV-UHFFFAOYSA-N Arsenic acid Chemical compound O[As](O)(O)=O DJHGAFSJWGLOIV-UHFFFAOYSA-N 0.000 claims description 2
- 229940000488 arsenic acid Drugs 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000011819 refractory material Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 210000000009 suboesophageal ganglion Anatomy 0.000 description 56
- 238000001228 spectrum Methods 0.000 description 40
- 238000010521 absorption reaction Methods 0.000 description 25
- 229910052698 phosphorus Inorganic materials 0.000 description 17
- 238000005275 alloying Methods 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 238000002329 infrared spectrum Methods 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 11
- 230000008602 contraction Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000009833 condensation Methods 0.000 description 8
- 230000005494 condensation Effects 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 230000006641 stabilisation Effects 0.000 description 8
- 238000011105 stabilization Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000005360 phosphosilicate glass Substances 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004566 IR spectroscopy Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 241000257465 Echinoidea Species 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005494 tarnishing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/902—Capping layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (21)
- 1.アルミニウムのような低融点、非耐火性物質上に塗布ガラス(SOG)を適 用する方法において、適用された塗布ガラス層は、水及び反応副生物の分離及び ガス放出に供され、前記層は、次いで湿分を含まない環境下で、湿分の拡散に対 する耐性を有する保護誘電体層によりキャップされる方法。
- 2.SOGは無機SOGである請求項1に記載の方法。 2.SOGは無機SOGである請求項1に記載の方法。
- 3.SOGは燐−合金化SOGである請求項1に記載の方法。
- 4.前記誘電体キャップ層は、硼珪酸ガラス:SiwOxByHz、ヒ珪酸ガラ ス:SiwOxAsyHz、鉛珪酸ガラス:SiwOxPbyHz、窒化硅素: SixNyHz、酸窒化硅素:SiwNxOyHz、弗素化窒化硅素:SiwN xFyHz、及び弗素化酸窒化硅素:SivNwOxFyHzからなる群から選 択されたものである請求項1に記載の方法。
- 5.前記誘電体キャップ層は、APCVD:常圧化学的蒸着、LPCVD:低圧 化学的蒸着、PECVD:プラズマエンハンスト化学的蒸着(バイアスの印加又 は無い場合)、LACVD:レーザアシスト化学的蒸着、BS:スパッタリング 又はバイアススパッタリング、ECR:エレクトロンサイクロトロン共鳴(イア スの印加又は無い場合)、及びSPIN−ON:ポリイミドのような塗布材料か らなる群から選択された方法により適用される請求項1に記載の方法。
- 6.ウエハ上に配線材料の第1の層を堆積する工程、前記第1の層をエッチング して、所望の配線トラックパターンを残す工程、エッチングされた配線トラック 上に誘電体の第1の層を堆積する工程、誘電体の第1の層上に1層又はそれ以上 の塗布ガラス層を適用して、前記第1の誘電体層を平坦化する工程、水及び反応 副生物の分離及びガス放出を行う工程、耐湿分拡散性の保護キャップ誘電体層を 堆積する工程、コンタクトホールを通して水が取り込まれることを防止するため ウエハを湿分のない環境に維持しつつ、堆積された層を通して第1の配線層に達 するようにコンタクトホールを開口する工程、配線材料の第2の層を適用する工 程、及び配線材料の第2の層を所望のパターンにエッチングする工程を具備する 、半導体ウエハに配線トラックを適用する方法。
- 7.SOGは無機SOGである請求項6に記載の方法。
- 8.SOGは燐−合金化SOGである請求項6に記載の方法。
- 9.前記誘電体キャップ層は、硼珪酸ガラス:SiwOxByHz、ヒ珪酸ガラ ス:SiwOxAsyHz、鉛珪酸ガラス:SiwOxPbyHz、窒化硅素: SixNyHz、酸窒化硅素:SiwNxOyHz、弗素化窒化硅素:SiwN xFyHz、及び弗素化酸窒化硅素:SivNwOxFyHzからなる群から選 択されたものである請求項6に記載の方法。
- 10.前記誘電体キャップ層は、APCVD:常圧化学的蒸着、LPCVD:低 圧化学的蒸着、PECVD:プラズマエンハンスト化学的蒸着(バイアスの印加 又は無い場合)、LACVD:レーザアシスト化学的蒸着、BS:スパッタリン グ又はバイアススパッタリング、ECR:エレクトロンサイクロトロン共鳴(イ アスの印加又は無い場合)、及びSPIN−ON:ポリイミドのような塗布材料 からなる群から選択された方法により適用される請求項8に記載の方法。
- 11.前記配線トラックはアルミニウムからなる請求項6に記載の方法。
- 12.SOG層の適用後、ウエハを大気圧フォーミングガスに供される請求項6 に記載の方法。
- 13.前記大気圧フォーミングガスは、窒素と約10%の水素との混合物である 請求項12に記載の方法。
- 14.前記コンタクトホールの開口後、前記第2の配線材料層の適用前に、第2 のガス放出が行われる請求項6に記載の方法。
- 15.ゲッタリングは前記第2の配線材料層のエッチングの後にウエハについて 行われる請求項6に記載の方法。
- 16.ガス放出はバッチ式誘電体堆積系においてその場で行われる請求項6に記 載の方法。
- 17.ガス放出は、現場単一ウエハ又はバッチ式堆積系に付設されたバッチ式ガ ス放出ステーションにおいて行われる請求項6に記載の方法。
- 18.SOGは疑似無機SOGである請求項1又は6に記載の方法。
- 19.第1の配線材料層、この第1の配線材料層上の第1の誘電体層、この第1 の誘電体層を平坦化する第1の誘電体層上の1層又はそれ以上の塗布ガラス層、 この塗布ガラス層上の耐湿分拡散性保護層誘電体キャップ層、前記コンタクトホ ールを通して第1の配線層に到達する第2の配線材料層とを具備し、前記第1及 び第2の配線層は前記ウエハ上の配線トラックを定義する、半導体チップ。
- 20.前記塗布ガラスは無機塗布ガラスである請求項19に記載の半導体チップ 。
- 21.前記誘電体キャップ層は、硼珪酸ガラス:SiwOxByHz、ヒ珪酸ガ ラス:SiwOxAsyHz、鉛珪酸ガラス:SiwOxPbyHz、窒化硅素 :SixNyHz、酸窒化硅素:SiwNxOyHz、弗素化窒化硅素:Siw NxFyHz、及び弗素化酸窒化硅素:SivNwOxFyHzからなる群から 選択されたものである請求項19に記載の半導体チップ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2,017,720 | 1990-05-29 | ||
CA002017720A CA2017720C (en) | 1990-05-29 | 1990-05-29 | Sog with moisture-resistant protective capping layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05508741A true JPH05508741A (ja) | 1993-12-02 |
JP3249513B2 JP3249513B2 (ja) | 2002-01-21 |
Family
ID=4145086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50968791A Expired - Lifetime JP3249513B2 (ja) | 1990-05-29 | 1991-05-28 | 耐湿性保護キャップ層を有するsog |
Country Status (7)
Country | Link |
---|---|
US (1) | US5364818A (ja) |
EP (1) | EP0532543B1 (ja) |
JP (1) | JP3249513B2 (ja) |
KR (1) | KR100200167B1 (ja) |
CA (1) | CA2017720C (ja) |
DE (1) | DE69107847T2 (ja) |
WO (1) | WO1991019317A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2017719C (en) * | 1990-05-29 | 1999-01-19 | Zarlink Semiconductor Inc. | Moisture-free sog process |
US5376590A (en) * | 1992-01-20 | 1994-12-27 | Nippon Telegraph And Telephone Corporation | Semiconductor device and method of fabricating the same |
US5576247A (en) * | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
DE69331362T2 (de) * | 1992-08-21 | 2002-06-20 | St Microelectronics Inc | Planarisierungsverfahren |
JP3158749B2 (ja) * | 1992-12-16 | 2001-04-23 | ヤマハ株式会社 | 半導体装置 |
JPH07169833A (ja) * | 1993-12-14 | 1995-07-04 | Nec Corp | 半導体装置及びその製造方法 |
JPH07211605A (ja) * | 1994-01-14 | 1995-08-11 | Hitachi Ltd | 処理装置および処理方法 |
US6591634B1 (en) * | 1994-02-25 | 2003-07-15 | Toshinori Morizane | Method for production of metal oxide glass film at a low temperature |
CN1118520A (zh) * | 1994-04-15 | 1996-03-13 | 松下电器产业株式会社 | 多层金属布线的形成方法 |
US5461003A (en) * | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
US5472913A (en) * | 1994-08-05 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating porous dielectric material with a passivation layer for electronics applications |
US5554567A (en) * | 1994-09-01 | 1996-09-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for improving adhesion to a spin-on-glass |
US5413940A (en) * | 1994-10-11 | 1995-05-09 | Taiwan Semiconductor Manufacturing Company | Process of treating SOG layer using end-point detector for outgassing |
US6652922B1 (en) * | 1995-06-15 | 2003-11-25 | Alliedsignal Inc. | Electron-beam processed films for microelectronics structures |
KR100208442B1 (ko) * | 1995-06-24 | 1999-07-15 | 김영환 | 반도체 소자의 비아홀 형성방법 |
US5861673A (en) * | 1995-11-16 | 1999-01-19 | Taiwan Semiconductor Manufacturing Company | Method for forming vias in multi-level integrated circuits, for use with multi-level metallizations |
US5849640A (en) * | 1996-04-01 | 1998-12-15 | Vanguard International Semiconductor Corporation | In-situ SOG etchback and deposition for IMD process |
US6114186A (en) * | 1996-07-30 | 2000-09-05 | Texas Instruments Incorporated | Hydrogen silsesquioxane thin films for low capacitance structures in integrated circuits |
US5854503A (en) * | 1996-11-19 | 1998-12-29 | Integrated Device Technology, Inc. | Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit |
US5691247A (en) * | 1996-12-19 | 1997-11-25 | Tower Semiconductor Ltd. | Method for depositing a flow fill layer on an integrated circuit wafer |
GB2322734A (en) * | 1997-02-27 | 1998-09-02 | Nec Corp | Semiconductor device and a method of manufacturing the same |
JPH1140558A (ja) * | 1997-07-22 | 1999-02-12 | Sony Corp | 誘電体膜の製造方法 |
EP0948035A1 (en) * | 1998-03-19 | 1999-10-06 | Applied Materials, Inc. | Method for applying a dielectric cap film to a dielectric stack |
JP3189781B2 (ja) * | 1998-04-08 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3329290B2 (ja) * | 1998-11-27 | 2002-09-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US6369453B1 (en) * | 2000-08-11 | 2002-04-09 | Advanced Micro Devices, Inc. | Semiconductor wafer for measurement and recordation of impurities in semiconductor insulators |
US6500770B1 (en) * | 2002-04-22 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for forming a multi-layer protective coating over porous low-k material |
US6896821B2 (en) | 2002-08-23 | 2005-05-24 | Dalsa Semiconductor Inc. | Fabrication of MEMS devices with spin-on glass |
US7744802B2 (en) * | 2004-06-25 | 2010-06-29 | Intel Corporation | Dielectric film with low coefficient of thermal expansion (CTE) using liquid crystalline resin |
KR101432606B1 (ko) | 2011-07-15 | 2014-08-21 | 제일모직주식회사 | 갭필용 충전제, 이의 제조 방법 및 이를 사용한 반도체 캐패시터의 제조 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180458A (ja) * | 1985-02-05 | 1986-08-13 | Nec Corp | 半導体装置の製造方法 |
JPH06101467B2 (ja) * | 1986-12-18 | 1994-12-12 | 松下電子工業株式会社 | 半導体集積回路装置 |
JPS6464340A (en) * | 1987-09-04 | 1989-03-10 | Hitachi Ltd | Semiconductor device and its manufacture |
JPH02152258A (ja) * | 1988-12-05 | 1990-06-12 | Kawasaki Steel Corp | Lsi用中間酸化膜の製造方法 |
CA2006174A1 (en) * | 1989-12-20 | 1991-06-20 | Luc Ouellet | Method of making crack-free insulating films with sog interlayer |
JPH04199625A (ja) * | 1990-11-29 | 1992-07-20 | Seiko Epson Corp | 半導体装置 |
US5252515A (en) * | 1991-08-12 | 1993-10-12 | Taiwan Semiconductor Manufacturing Company | Method for field inversion free multiple layer metallurgy VLSI processing |
-
1990
- 1990-05-29 CA CA002017720A patent/CA2017720C/en not_active Expired - Fee Related
-
1991
- 1991-05-28 WO PCT/CA1991/000177 patent/WO1991019317A1/en active IP Right Grant
- 1991-05-28 DE DE69107847T patent/DE69107847T2/de not_active Expired - Lifetime
- 1991-05-28 JP JP50968791A patent/JP3249513B2/ja not_active Expired - Lifetime
- 1991-05-28 US US07/962,214 patent/US5364818A/en not_active Expired - Lifetime
- 1991-05-28 EP EP91909904A patent/EP0532543B1/en not_active Expired - Lifetime
-
1992
- 1992-11-30 KR KR1019920703066A patent/KR100200167B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69107847D1 (de) | 1995-04-06 |
EP0532543A1 (en) | 1993-03-24 |
DE69107847T2 (de) | 1995-10-26 |
EP0532543B1 (en) | 1995-03-01 |
WO1991019317A1 (en) | 1991-12-12 |
CA2017720C (en) | 1999-01-19 |
JP3249513B2 (ja) | 2002-01-21 |
US5364818A (en) | 1994-11-15 |
KR100200167B1 (ko) | 1999-06-15 |
CA2017720A1 (en) | 1991-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH05508741A (ja) | 耐湿性保護キャップ層を有するsog | |
CA2026605C (en) | Multi-level interconnection cmos devices including sog | |
JP3137644B2 (ja) | 半導体装置を製造するためのスピンオン・ガラス加工技術 | |
KR100219387B1 (ko) | 반도체 웨이퍼를 평탄화하는 방법 | |
US5336532A (en) | Low temperature process for the formation of ceramic coatings | |
US20190393083A1 (en) | Method of Manufacturing Semiconductor Device | |
US5541445A (en) | High performance passivation for semiconductor devices | |
JPH02501693A (ja) | ハイブリッド冷間溶接を改善するために半導体装置の上に形成された金属コンタクトバンプからの酸化物の除去方法 | |
US6071830A (en) | Method of forming insulating film | |
US6831015B1 (en) | Fabrication method of semiconductor device and abrasive liquid used therein | |
JPH115820A (ja) | 無機エーロゲル及び該無機物質へグラフトさせた有機充填物からなる集積回路用低誘電率複合膜及び製造方法 | |
JPH1126449A (ja) | 絶縁膜の成膜方法 | |
US8623466B2 (en) | Method for preparing an oriented-porosity dielectric material on a substrate by means of electromagnetic and photonic treatment | |
Homma et al. | A Spin‐on‐Glass Film Treatment Technology Using a Fluoroalkoxysilane Vapor at Room Temperature | |
JP2009094183A (ja) | 疎水化多孔質膜の製造方法 | |
CA2480691A1 (en) | Method for forming housings for electronic components and electronic components that are hermetically encapsulated thereby | |
GB2235444A (en) | A method of producing insulating layers | |
CN112968072A (zh) | 直接键合有吸气剂材料的薄密封层的制造检测装置的方法 | |
Shigetou et al. | UV/vapor-assisted hybrid bonding technology as a tool for future nanopackaging | |
RU1396862C (ru) | Способ получения структуры полупроводниковых приборов | |
JPH04342135A (ja) | 絶縁膜の形成方法 | |
Rogojevic | Characterization and tailoring of porous sol-gel dielectrics for interlayer dielectric applications | |
JPH05190685A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071109 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081109 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091109 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091109 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101109 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111109 Year of fee payment: 10 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111109 Year of fee payment: 10 |