JPS6464340A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS6464340A
JPS6464340A JP22022587A JP22022587A JPS6464340A JP S6464340 A JPS6464340 A JP S6464340A JP 22022587 A JP22022587 A JP 22022587A JP 22022587 A JP22022587 A JP 22022587A JP S6464340 A JPS6464340 A JP S6464340A
Authority
JP
Japan
Prior art keywords
film
heat treatment
20min
sog
sih4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22022587A
Other languages
Japanese (ja)
Inventor
Itaru Ogiwara
Shinpei Iijima
Yoshifumi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP22022587A priority Critical patent/JPS6464340A/en
Publication of JPS6464340A publication Critical patent/JPS6464340A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve reliability and production yield, by using a triple-layer film consisting of an SiO2 film, an SOG film, an SiO2 film or a phosphorus glass film so as to form insulation films serving as metallic wirings and by performing a plurality of processes of coating and heat treatment to form the SOG film. CONSTITUTION:An SiO2 film 16 is formed by a CVD method in which SiH4 and oxygen are used as reaction gases. Next a rotary coating method is used to control the speed of rotation and to form an SOG film 17. Heat treatment is performed at 800 deg.C for 20min., in a nitrogen atmosphere and then the rotary coating method is used again to control the speed of rotation and to superpose the SOG films 17. Heat treatment is performed further at 800 deg.C for 20min., in the nitrogen atmosphere. Next a phosphorus glass 18 is formed at 430 deg.C by a CVD method in which SiH4, O2, and phosphine are used as reaction gases. A contact hole 19 is formed and an ion implantation method is used to introduce phosphorus into a substrate 11. Heat treatment of the substrate is performed at 850 deg.C for 20min., to form an n<+> region 20. Subsequently a sputtering method is used to form an Al film 21 and to perform its patterning process.
JP22022587A 1987-09-04 1987-09-04 Semiconductor device and its manufacture Pending JPS6464340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22022587A JPS6464340A (en) 1987-09-04 1987-09-04 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22022587A JPS6464340A (en) 1987-09-04 1987-09-04 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS6464340A true JPS6464340A (en) 1989-03-10

Family

ID=16747842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22022587A Pending JPS6464340A (en) 1987-09-04 1987-09-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS6464340A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334323A (en) * 1989-06-29 1991-02-14 Nec Corp Manufacture of semiconductor device
JPH04239748A (en) * 1991-01-14 1992-08-27 Samsung Electron Co Ltd Method of forming multilayer interconnection of semiconductor device
US5364818A (en) * 1990-05-29 1994-11-15 Mitel Corporation Sog with moisture resistant protective capping layer
JP2007109726A (en) * 2005-10-11 2007-04-26 Oki Electric Ind Co Ltd Method of forming inclined face, wiring structure and method of forming same, coating layer of level difference structure, and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334323A (en) * 1989-06-29 1991-02-14 Nec Corp Manufacture of semiconductor device
US5364818A (en) * 1990-05-29 1994-11-15 Mitel Corporation Sog with moisture resistant protective capping layer
JPH04239748A (en) * 1991-01-14 1992-08-27 Samsung Electron Co Ltd Method of forming multilayer interconnection of semiconductor device
JP2007109726A (en) * 2005-10-11 2007-04-26 Oki Electric Ind Co Ltd Method of forming inclined face, wiring structure and method of forming same, coating layer of level difference structure, and semiconductor device

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