JPS6464340A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS6464340A JPS6464340A JP22022587A JP22022587A JPS6464340A JP S6464340 A JPS6464340 A JP S6464340A JP 22022587 A JP22022587 A JP 22022587A JP 22022587 A JP22022587 A JP 22022587A JP S6464340 A JPS6464340 A JP S6464340A
- Authority
- JP
- Japan
- Prior art keywords
- film
- heat treatment
- 20min
- sog
- sih4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve reliability and production yield, by using a triple-layer film consisting of an SiO2 film, an SOG film, an SiO2 film or a phosphorus glass film so as to form insulation films serving as metallic wirings and by performing a plurality of processes of coating and heat treatment to form the SOG film. CONSTITUTION:An SiO2 film 16 is formed by a CVD method in which SiH4 and oxygen are used as reaction gases. Next a rotary coating method is used to control the speed of rotation and to form an SOG film 17. Heat treatment is performed at 800 deg.C for 20min., in a nitrogen atmosphere and then the rotary coating method is used again to control the speed of rotation and to superpose the SOG films 17. Heat treatment is performed further at 800 deg.C for 20min., in the nitrogen atmosphere. Next a phosphorus glass 18 is formed at 430 deg.C by a CVD method in which SiH4, O2, and phosphine are used as reaction gases. A contact hole 19 is formed and an ion implantation method is used to introduce phosphorus into a substrate 11. Heat treatment of the substrate is performed at 850 deg.C for 20min., to form an n<+> region 20. Subsequently a sputtering method is used to form an Al film 21 and to perform its patterning process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22022587A JPS6464340A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22022587A JPS6464340A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464340A true JPS6464340A (en) | 1989-03-10 |
Family
ID=16747842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22022587A Pending JPS6464340A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464340A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334323A (en) * | 1989-06-29 | 1991-02-14 | Nec Corp | Manufacture of semiconductor device |
JPH04239748A (en) * | 1991-01-14 | 1992-08-27 | Samsung Electron Co Ltd | Method of forming multilayer interconnection of semiconductor device |
US5364818A (en) * | 1990-05-29 | 1994-11-15 | Mitel Corporation | Sog with moisture resistant protective capping layer |
JP2007109726A (en) * | 2005-10-11 | 2007-04-26 | Oki Electric Ind Co Ltd | Method of forming inclined face, wiring structure and method of forming same, coating layer of level difference structure, and semiconductor device |
-
1987
- 1987-09-04 JP JP22022587A patent/JPS6464340A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334323A (en) * | 1989-06-29 | 1991-02-14 | Nec Corp | Manufacture of semiconductor device |
US5364818A (en) * | 1990-05-29 | 1994-11-15 | Mitel Corporation | Sog with moisture resistant protective capping layer |
JPH04239748A (en) * | 1991-01-14 | 1992-08-27 | Samsung Electron Co Ltd | Method of forming multilayer interconnection of semiconductor device |
JP2007109726A (en) * | 2005-10-11 | 2007-04-26 | Oki Electric Ind Co Ltd | Method of forming inclined face, wiring structure and method of forming same, coating layer of level difference structure, and semiconductor device |
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