JPH05469B2 - - Google Patents

Info

Publication number
JPH05469B2
JPH05469B2 JP58134162A JP13416283A JPH05469B2 JP H05469 B2 JPH05469 B2 JP H05469B2 JP 58134162 A JP58134162 A JP 58134162A JP 13416283 A JP13416283 A JP 13416283A JP H05469 B2 JPH05469 B2 JP H05469B2
Authority
JP
Japan
Prior art keywords
deposited film
sih
forming
deposition chamber
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58134162A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6026664A (ja
Inventor
Masaaki Hirooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58134162A priority Critical patent/JPS6026664A/ja
Priority to US06/628,569 priority patent/US4554180A/en
Priority to FR8411551A priority patent/FR2549461B1/fr
Priority to DE19843426822 priority patent/DE3426822A1/de
Publication of JPS6026664A publication Critical patent/JPS6026664A/ja
Publication of JPH05469B2 publication Critical patent/JPH05469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
JP58134162A 1983-07-22 1983-07-22 アモルフアスシリコン堆積膜形成法 Granted JPS6026664A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58134162A JPS6026664A (ja) 1983-07-22 1983-07-22 アモルフアスシリコン堆積膜形成法
US06/628,569 US4554180A (en) 1983-07-22 1984-07-06 Process for producing silicon-containing deposit film
FR8411551A FR2549461B1 (fr) 1983-07-22 1984-07-20 Procede de production d'un film depose contenant du silicium
DE19843426822 DE3426822A1 (de) 1983-07-22 1984-07-20 Verfahren zur herstellung siliciumhaltiger abscheidungsfilme

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58134162A JPS6026664A (ja) 1983-07-22 1983-07-22 アモルフアスシリコン堆積膜形成法

Publications (2)

Publication Number Publication Date
JPS6026664A JPS6026664A (ja) 1985-02-09
JPH05469B2 true JPH05469B2 (enExample) 1993-01-06

Family

ID=15121901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58134162A Granted JPS6026664A (ja) 1983-07-22 1983-07-22 アモルフアスシリコン堆積膜形成法

Country Status (4)

Country Link
US (1) US4554180A (enExample)
JP (1) JPS6026664A (enExample)
DE (1) DE3426822A1 (enExample)
FR (1) FR2549461B1 (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4728528A (en) * 1985-02-18 1988-03-01 Canon Kabushiki Kaisha Process for forming deposited film
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (ja) * 1985-03-27 1996-09-25 キヤノン株式会社 機能性堆積膜の製造装置
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
US4812325A (en) * 1985-10-23 1989-03-14 Canon Kabushiki Kaisha Method for forming a deposited film
US4818564A (en) * 1985-10-23 1989-04-04 Canon Kabushiki Kaisha Method for forming deposited film
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPS62136885A (ja) * 1985-12-11 1987-06-19 Canon Inc 光起電力素子、その製造方法及びその製造装置
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0647727B2 (ja) * 1985-12-24 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0647730B2 (ja) * 1985-12-25 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0651908B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JPH0651909B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
US4723363A (en) * 1986-12-29 1988-02-09 Motorola Inc. Process for removal of water
US5269848A (en) * 1987-03-20 1993-12-14 Canon Kabushiki Kaisha Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor
US5874350A (en) * 1987-03-20 1999-02-23 Canon Kabushiki Kaisha Process for preparing a functional thin film by way of the chemical reaction among active species
JPH0712062B2 (ja) * 1987-09-09 1995-02-08 三菱電機株式会社 半導体記憶装置の製造方法
US5011706A (en) * 1989-04-12 1991-04-30 Dow Corning Corporation Method of forming coatings containing amorphous silicon carbide
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
EP1715509B1 (en) * 1999-03-30 2011-08-24 JSR Corporation Method of forming silicon films
TWI281921B (en) * 2000-03-13 2007-06-01 Jsr Corp Novel cyclosilane compound, and solution composition and process for forming a silicon film
JP2002087809A (ja) * 2000-09-11 2002-03-27 Jsr Corp シリコン膜の形成方法
JP2002324907A (ja) * 2001-04-25 2002-11-08 Jsr Corp 太陽電池の製造法
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US8211396B1 (en) 2004-09-24 2012-07-03 Kovio, Inc. Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
US20060090973A1 (en) * 2004-10-28 2006-05-04 Michael Potas Valve system controlled by rate of pressure change
JP2008535758A (ja) * 2005-04-10 2008-09-04 アールイーシー シリコン インコーポレイテッド 多結晶シリコンの製造
WO2007044429A2 (en) 2005-10-05 2007-04-19 Nanogram Corporation Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
KR101467412B1 (ko) * 2006-10-06 2014-12-01 코비오 인코포레이티드 실리콘 폴리머, 실리콘 화합물 중합법 및 실리콘 폴리머 박막 형성법
JP4518284B2 (ja) * 2008-04-21 2010-08-04 ソニー株式会社 ポリシラン修飾シリコン細線の製造方法およびシリコン膜の形成方法
US8624049B2 (en) * 2010-01-18 2014-01-07 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
JP2014093345A (ja) * 2012-11-01 2014-05-19 Japan Advanced Institute Of Science & Technology Hokuriku 複数の基板上へシリコン膜を一括して形成する方法
WO2016009827A1 (ja) 2014-07-16 2016-01-21 日産化学工業株式会社 高分子量ポリシラン及びその製造方法
KR20170030563A (ko) 2014-07-16 2017-03-17 씬 필름 일렉트로닉스 에이에스에이 농축법을 이용한 고리형 실란의 제조방법
US10414661B2 (en) 2014-11-04 2019-09-17 Thin Film Electronics Asa Method of producing silicon hydride oxide-containing solvent
EP3252007A4 (en) * 2014-11-04 2018-10-24 Thin Film Electronics ASA Silane polymerization inhibitor
TWI783027B (zh) 2017-08-28 2022-11-11 日商日本觸媒股份有限公司 氫化矽烷組合物
TWI775922B (zh) 2017-08-31 2022-09-01 日商日本觸媒股份有限公司 氫化矽烷組合物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
GB2107360B (en) * 1981-10-12 1985-09-25 Central Electr Generat Board Depositing silicon on metal
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法

Also Published As

Publication number Publication date
DE3426822C2 (enExample) 1993-01-28
FR2549461A1 (fr) 1985-01-25
FR2549461B1 (fr) 1987-08-21
JPS6026664A (ja) 1985-02-09
DE3426822A1 (de) 1985-01-31
US4554180A (en) 1985-11-19

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