JPH0546104B2 - - Google Patents

Info

Publication number
JPH0546104B2
JPH0546104B2 JP57147568A JP14756882A JPH0546104B2 JP H0546104 B2 JPH0546104 B2 JP H0546104B2 JP 57147568 A JP57147568 A JP 57147568A JP 14756882 A JP14756882 A JP 14756882A JP H0546104 B2 JPH0546104 B2 JP H0546104B2
Authority
JP
Japan
Prior art keywords
base
transistor
npn
emitter
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57147568A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5939060A (ja
Inventor
Yoji Nishio
Shigeo Kuboki
Masahiro Iwamura
Ikuro Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57147568A priority Critical patent/JPS5939060A/ja
Publication of JPS5939060A publication Critical patent/JPS5939060A/ja
Publication of JPH0546104B2 publication Critical patent/JPH0546104B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/996Masterslice integrated circuits using combined field effect technology and bipolar technology

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57147568A 1982-08-27 1982-08-27 半導体集積回路装置 Granted JPS5939060A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147568A JPS5939060A (ja) 1982-08-27 1982-08-27 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147568A JPS5939060A (ja) 1982-08-27 1982-08-27 半導体集積回路装置

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP3257454A Division JP2524027B2 (ja) 1991-10-04 1991-10-04 半導体集積回路装置
JP3257455A Division JP2524028B2 (ja) 1991-10-04 1991-10-04 半導体集積回路装置
JP25745391A Division JPH0666424B2 (ja) 1991-10-04 1991-10-04 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5939060A JPS5939060A (ja) 1984-03-03
JPH0546104B2 true JPH0546104B2 (enrdf_load_stackoverflow) 1993-07-13

Family

ID=15433290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147568A Granted JPS5939060A (ja) 1982-08-27 1982-08-27 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5939060A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106143A (ja) * 1982-12-10 1984-06-19 Ricoh Co Ltd Bi−cmosゲ−トアレイ
JPH0815209B2 (ja) * 1985-01-25 1996-02-14 株式会社日立製作所 半導体集積回路装置
JPS62115843A (ja) * 1985-11-15 1987-05-27 Nec Corp Bi−cmosゲ−トアレイ
JP2574774B2 (ja) * 1986-10-09 1997-01-22 株式会社日立製作所 半導体素子のレイアウト方式
JPH03114259A (ja) * 1990-08-31 1991-05-15 Ricoh Co Ltd Bi―CMOSゲートアレイ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226181A (en) * 1975-08-22 1977-02-26 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor integrated circuit unit
JPS5545207A (en) * 1978-09-26 1980-03-29 Oki Electric Ind Co Ltd Complementary mos inverter circuit unit and its production
JPS56100461A (en) * 1980-01-17 1981-08-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor ic device
JPS57181152A (en) * 1981-04-30 1982-11-08 Toshiba Corp Semiconductor integrated circuit device
JPS57186833A (en) * 1981-05-13 1982-11-17 Hitachi Ltd Switching element

Also Published As

Publication number Publication date
JPS5939060A (ja) 1984-03-03

Similar Documents

Publication Publication Date Title
EP0290672B1 (en) A semiconductor integrated circuit device
US4425516A (en) Buffer circuit and integrated semiconductor circuit structure formed of bipolar and CMOS transistor elements
KR19990066747A (ko) 반도체 장치
US5376816A (en) Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors
JP2822781B2 (ja) マスタスライス方式半導体集積回路装置
JP2632420B2 (ja) 半導体集積回路
JPH0546104B2 (enrdf_load_stackoverflow)
KR920006750B1 (ko) 반도체장치
JPH0337767B2 (enrdf_load_stackoverflow)
JP2524027B2 (ja) 半導体集積回路装置
US6081004A (en) BiCMOS compacted logic array
JP2714996B2 (ja) 半導体集積回路装置
JPH04355956A (ja) 半導体集積回路装置
JPH0570942B2 (enrdf_load_stackoverflow)
JP3863267B2 (ja) 半導体集積回路、マクロセル、基本セルおよびトランジスタアレイ
JPH0652780B2 (ja) 縦型絶縁コレクタpnpトランジスタ構造
JP2901542B2 (ja) 半導体集積回路
JP3080800B2 (ja) 半導体装置
JPH04355957A (ja) 半導体集積回路装置
JPH06350026A (ja) 集積半導体装置
JP2555794B2 (ja) 半導体装置
JPH0691197B2 (ja) 半導体集積回路装置
JPH04306876A (ja) ゲートアレイ集積回路
JPH01155652A (ja) BiMOS半導体集積回路
JPH0653450A (ja) マスタースライス方式の半導体集積回路装置