JPH0542817B2 - - Google Patents

Info

Publication number
JPH0542817B2
JPH0542817B2 JP56160688A JP16068881A JPH0542817B2 JP H0542817 B2 JPH0542817 B2 JP H0542817B2 JP 56160688 A JP56160688 A JP 56160688A JP 16068881 A JP16068881 A JP 16068881A JP H0542817 B2 JPH0542817 B2 JP H0542817B2
Authority
JP
Japan
Prior art keywords
film
layer
polycrystalline silicon
oxide film
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56160688A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5861671A (ja
Inventor
Takeo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56160688A priority Critical patent/JPS5861671A/ja
Publication of JPS5861671A publication Critical patent/JPS5861671A/ja
Publication of JPH0542817B2 publication Critical patent/JPH0542817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Weting (AREA)
JP56160688A 1981-10-08 1981-10-08 半導体装置の製造方法 Granted JPS5861671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56160688A JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56160688A JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5861671A JPS5861671A (ja) 1983-04-12
JPH0542817B2 true JPH0542817B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=15720313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56160688A Granted JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5861671A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314871A (ja) * 1987-06-17 1988-12-22 Nec Corp Ｓｏｉ構造のｍｏｓｆｅｔ製造方法
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films

Also Published As

Publication number Publication date
JPS5861671A (ja) 1983-04-12

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