JPS5861671A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5861671A
JPS5861671A JP56160688A JP16068881A JPS5861671A JP S5861671 A JPS5861671 A JP S5861671A JP 56160688 A JP56160688 A JP 56160688A JP 16068881 A JP16068881 A JP 16068881A JP S5861671 A JPS5861671 A JP S5861671A
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
etching
silicon film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56160688A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542817B2 (enrdf_load_stackoverflow
Inventor
Takeo Yamada
山田　彪夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56160688A priority Critical patent/JPS5861671A/ja
Publication of JPS5861671A publication Critical patent/JPS5861671A/ja
Publication of JPH0542817B2 publication Critical patent/JPH0542817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Weting (AREA)
JP56160688A 1981-10-08 1981-10-08 半導体装置の製造方法 Granted JPS5861671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56160688A JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56160688A JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5861671A true JPS5861671A (ja) 1983-04-12
JPH0542817B2 JPH0542817B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=15720313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56160688A Granted JPS5861671A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5861671A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314871A (ja) * 1987-06-17 1988-12-22 Nec Corp Ｓｏｉ構造のｍｏｓｆｅｔ製造方法
US6465284B2 (en) 1993-07-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314871A (ja) * 1987-06-17 1988-12-22 Nec Corp Ｓｏｉ構造のｍｏｓｆｅｔ製造方法
US6465284B2 (en) 1993-07-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JPH0542817B2 (enrdf_load_stackoverflow) 1993-06-29

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