JPH0515675B2 - - Google Patents

Info

Publication number
JPH0515675B2
JPH0515675B2 JP1216569A JP21656989A JPH0515675B2 JP H0515675 B2 JPH0515675 B2 JP H0515675B2 JP 1216569 A JP1216569 A JP 1216569A JP 21656989 A JP21656989 A JP 21656989A JP H0515675 B2 JPH0515675 B2 JP H0515675B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon
osf
less
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1216569A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0380193A (ja
Inventor
Shuji Yokota
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP1216569A priority Critical patent/JPH0380193A/ja
Priority to DE69013631T priority patent/DE69013631T2/de
Priority to EP90309114A priority patent/EP0419044B1/en
Priority to US07/570,680 priority patent/US5067989A/en
Publication of JPH0380193A publication Critical patent/JPH0380193A/ja
Publication of JPH0515675B2 publication Critical patent/JPH0515675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1216569A 1989-08-23 1989-08-23 シリコン半導体単結晶 Granted JPH0380193A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1216569A JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶
DE69013631T DE69013631T2 (de) 1989-08-23 1990-08-20 Einkristallsilizium.
EP90309114A EP0419044B1 (en) 1989-08-23 1990-08-20 Single crystal silicon
US07/570,680 US5067989A (en) 1989-08-23 1990-08-22 Single crystal silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1216569A JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶

Publications (2)

Publication Number Publication Date
JPH0380193A JPH0380193A (ja) 1991-04-04
JPH0515675B2 true JPH0515675B2 (enExample) 1993-03-02

Family

ID=16690481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1216569A Granted JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶

Country Status (4)

Country Link
US (1) US5067989A (enExample)
EP (1) EP0419044B1 (enExample)
JP (1) JPH0380193A (enExample)
DE (1) DE69013631T2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
EP0691423B1 (en) * 1994-07-06 1999-03-24 Shin-Etsu Handotai Company Limited Method for the preparation of silicon single crystal and fused silica glass crucible therefor
US6060021A (en) * 1997-05-07 2000-05-09 Tokuyama Corporation Method of storing trichlorosilane and silicon tetrachloride
DE19741465A1 (de) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
JP4096557B2 (ja) * 2000-04-25 2008-06-04 信越半導体株式会社 シリコン単結晶ウエーハ及びシリコン単結晶の製造方法並びにシリコン単結晶ウエーハの製造方法
US20020144642A1 (en) * 2000-12-26 2002-10-10 Hariprasad Sreedharamurthy Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects
JP2003209114A (ja) * 2002-01-10 2003-07-25 Japan Science & Technology Corp シリコン結晶中の遷移金属不純物のゲッタリング方法
JP4908730B2 (ja) * 2003-04-21 2012-04-04 株式会社Ｓｕｍｃｏ 高抵抗シリコン単結晶の製造方法
EP1717355B1 (en) * 2004-02-02 2013-11-20 Shin-Etsu Handotai Co., Ltd. Production apparatus and process for producing silicon single crystal and silicon wafer
JP4345585B2 (ja) * 2004-06-16 2009-10-14 信越半導体株式会社 シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
DE102007027110A1 (de) 2007-06-13 2008-12-18 Wacker Chemie Ag Verfahren und Vorrichtung zum Verpacken von polykristallinem Siliciumbruch
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
JP6439593B2 (ja) * 2015-06-02 2018-12-19 信越半導体株式会社 不純物分析方法及びシリコン結晶の評価方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3150539A1 (de) * 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
JPS6055629A (ja) * 1983-09-07 1985-03-30 Fujitsu Ltd ミラ−ウェハの製造方法
JPH0226031A (ja) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd シリコンウェーハ

Also Published As

Publication number Publication date
DE69013631D1 (de) 1994-12-01
JPH0380193A (ja) 1991-04-04
EP0419044B1 (en) 1994-10-26
EP0419044A1 (en) 1991-03-27
DE69013631T2 (de) 1995-05-24
US5067989A (en) 1991-11-26

Similar Documents

Publication Publication Date Title
US7837791B2 (en) Silicon single crystal wafer for particle monitor
US6641888B2 (en) Silicon single crystal, silicon wafer, and epitaxial wafer.
JP2005033217A (ja) シリコン半導体ウエハの製造方法
US5067989A (en) Single crystal silicon
US20040216659A1 (en) Method of making an epitaxial wafer
US6117231A (en) Method of manufacturing semiconductor silicon single crystal wafer
TWI395840B (zh) 矽單晶提拉用種晶及使用該種晶之矽單晶製造方法
JP4196602B2 (ja) エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
JP3870293B2 (ja) シリコン半導体基板及びその製造方法
JP5678211B2 (ja) アニールウエハの製造方法
JP3195889B2 (ja) シリコン単結晶の製造方法及び石英ガラスルツボ
JP4750916B2 (ja) シリコン単結晶インゴットの育成方法およびそれを用いたシリコンウェーハ
JP2000026196A (ja) シリコン半導体基板及びその製造方法
EP1215309B1 (en) Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer
JPH04294540A (ja) 半導体の製造方法
EP1498518A1 (en) Silicon carbide single crystal and method for preparation thereof
JP3752890B2 (ja) シリコン単結晶インゴットの製造方法
JPH0714755A (ja) シリコン半導体基板及びその製造方法
JPS6097619A (ja) 半導体製造方法
Ivanov et al. Production of structurally perfect single crystals of CdTe and CdZnTe
CN110387578A (zh) 单晶硅锭及其制造方法以及单晶硅晶片
JP2006278892A (ja) シリコン単結晶ウェーハの品質評価方法
JPH11278991A (ja) 半導体シリコン基板
JP2643975B2 (ja) シリコン単結晶
JP2001156076A (ja) シリコン半導体基板の製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080302

Year of fee payment: 15

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080302

Year of fee payment: 15

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080302

Year of fee payment: 15

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090302

Year of fee payment: 16

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090302

Year of fee payment: 16

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100302

Year of fee payment: 17

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100302

Year of fee payment: 17