JPH0380193A - シリコン半導体単結晶 - Google Patents

シリコン半導体単結晶

Info

Publication number
JPH0380193A
JPH0380193A JP1216569A JP21656989A JPH0380193A JP H0380193 A JPH0380193 A JP H0380193A JP 1216569 A JP1216569 A JP 1216569A JP 21656989 A JP21656989 A JP 21656989A JP H0380193 A JPH0380193 A JP H0380193A
Authority
JP
Japan
Prior art keywords
single crystal
silicon
silicon semiconductor
semiconductor single
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1216569A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0515675B2 (enExample
Inventor
Shuji Yokota
修二 横田
Hirotoshi Yamagishi
浩利 山岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP1216569A priority Critical patent/JPH0380193A/ja
Priority to EP90309114A priority patent/EP0419044B1/en
Priority to DE69013631T priority patent/DE69013631T2/de
Priority to US07/570,680 priority patent/US5067989A/en
Publication of JPH0380193A publication Critical patent/JPH0380193A/ja
Publication of JPH0515675B2 publication Critical patent/JPH0515675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1216569A 1989-08-23 1989-08-23 シリコン半導体単結晶 Granted JPH0380193A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1216569A JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶
EP90309114A EP0419044B1 (en) 1989-08-23 1990-08-20 Single crystal silicon
DE69013631T DE69013631T2 (de) 1989-08-23 1990-08-20 Einkristallsilizium.
US07/570,680 US5067989A (en) 1989-08-23 1990-08-22 Single crystal silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1216569A JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶

Publications (2)

Publication Number Publication Date
JPH0380193A true JPH0380193A (ja) 1991-04-04
JPH0515675B2 JPH0515675B2 (enExample) 1993-03-02

Family

ID=16690481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1216569A Granted JPH0380193A (ja) 1989-08-23 1989-08-23 シリコン半導体単結晶

Country Status (4)

Country Link
US (1) US5067989A (enExample)
EP (1) EP0419044B1 (enExample)
JP (1) JPH0380193A (enExample)
DE (1) DE69013631T2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060021A (en) * 1997-05-07 2000-05-09 Tokuyama Corporation Method of storing trichlorosilane and silicon tetrachloride
JP2004521056A (ja) * 2000-12-26 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 凝集した内因性点欠陥が実質的に存在しない鉄濃度の低い単結晶シリコンの製造方法および製造装置
WO2005073439A1 (ja) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
JP2006001767A (ja) * 2004-06-16 2006-01-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
JP4096557B2 (ja) * 2000-04-25 2008-06-04 信越半導体株式会社 シリコン単結晶ウエーハ及びシリコン単結晶の製造方法並びにシリコン単結晶ウエーハの製造方法
WO2011033712A1 (ja) * 2009-09-16 2011-03-24 信越化学工業株式会社 多結晶シリコン塊および多結晶シリコン塊の製造方法
US8833042B2 (en) 2007-06-13 2014-09-16 Wacker Chemie Ag Method and device for packaging polycrystalline bulk silicon
JP2016223976A (ja) * 2015-06-02 2016-12-28 信越半導体株式会社 不純物分析方法及びシリコン結晶の評価方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
EP0691423B1 (en) * 1994-07-06 1999-03-24 Shin-Etsu Handotai Company Limited Method for the preparation of silicon single crystal and fused silica glass crucible therefor
DE19741465A1 (de) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
JP2003209114A (ja) 2002-01-10 2003-07-25 Japan Science & Technology Corp シリコン結晶中の遷移金属不純物のゲッタリング方法
JP4908730B2 (ja) * 2003-04-21 2012-04-04 株式会社Ｓｕｍｃｏ 高抵抗シリコン単結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3150539A1 (de) * 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
JPS6055629A (ja) * 1983-09-07 1985-03-30 Fujitsu Ltd ミラ−ウェハの製造方法
JPH0226031A (ja) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd シリコンウェーハ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060021A (en) * 1997-05-07 2000-05-09 Tokuyama Corporation Method of storing trichlorosilane and silicon tetrachloride
JP4096557B2 (ja) * 2000-04-25 2008-06-04 信越半導体株式会社 シリコン単結晶ウエーハ及びシリコン単結晶の製造方法並びにシリコン単結晶ウエーハの製造方法
JP2004521056A (ja) * 2000-12-26 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 凝集した内因性点欠陥が実質的に存在しない鉄濃度の低い単結晶シリコンの製造方法および製造装置
WO2005073439A1 (ja) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
JPWO2005073439A1 (ja) * 2004-02-02 2007-09-13 信越半導体株式会社 シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
JP2008247737A (ja) * 2004-02-02 2008-10-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置及び製造方法並びにシリコンウェーハ
JP2006001767A (ja) * 2004-06-16 2006-01-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
US8833042B2 (en) 2007-06-13 2014-09-16 Wacker Chemie Ag Method and device for packaging polycrystalline bulk silicon
WO2011033712A1 (ja) * 2009-09-16 2011-03-24 信越化学工業株式会社 多結晶シリコン塊および多結晶シリコン塊の製造方法
US11440804B2 (en) 2009-09-16 2022-09-13 Shin-Etsu Chemical Co., Ltd. Process for producing polycrystalline silicon mass
JP2016223976A (ja) * 2015-06-02 2016-12-28 信越半導体株式会社 不純物分析方法及びシリコン結晶の評価方法

Also Published As

Publication number Publication date
US5067989A (en) 1991-11-26
EP0419044B1 (en) 1994-10-26
EP0419044A1 (en) 1991-03-27
DE69013631D1 (de) 1994-12-01
DE69013631T2 (de) 1995-05-24
JPH0515675B2 (enExample) 1993-03-02

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