DE69013631T2 - Einkristallsilizium. - Google Patents
Einkristallsilizium.Info
- Publication number
- DE69013631T2 DE69013631T2 DE69013631T DE69013631T DE69013631T2 DE 69013631 T2 DE69013631 T2 DE 69013631T2 DE 69013631 T DE69013631 T DE 69013631T DE 69013631 T DE69013631 T DE 69013631T DE 69013631 T2 DE69013631 T2 DE 69013631T2
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- crystal silicon
- silicon
- ppma
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 28
- 239000012535 impurity Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 230000007547 defect Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000003947 neutron activation analysis Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1216569A JPH0380193A (ja) | 1989-08-23 | 1989-08-23 | シリコン半導体単結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69013631D1 DE69013631D1 (de) | 1994-12-01 |
| DE69013631T2 true DE69013631T2 (de) | 1995-05-24 |
Family
ID=16690481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69013631T Expired - Fee Related DE69013631T2 (de) | 1989-08-23 | 1990-08-20 | Einkristallsilizium. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5067989A (enExample) |
| EP (1) | EP0419044B1 (enExample) |
| JP (1) | JPH0380193A (enExample) |
| DE (1) | DE69013631T2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5288366A (en) * | 1992-04-24 | 1994-02-22 | Memc Electronic Materials, Inc. | Method for growing multiple single crystals and apparatus for use therein |
| US5488924A (en) * | 1993-12-06 | 1996-02-06 | Memc Electronic Materials | Hopper for use in charging semiconductor source material |
| EP0691423B1 (en) * | 1994-07-06 | 1999-03-24 | Shin-Etsu Handotai Company Limited | Method for the preparation of silicon single crystal and fused silica glass crucible therefor |
| US6060021A (en) * | 1997-05-07 | 2000-05-09 | Tokuyama Corporation | Method of storing trichlorosilane and silicon tetrachloride |
| DE19741465A1 (de) * | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
| WO2001081661A1 (fr) * | 2000-04-25 | 2001-11-01 | Shin-Etsu Handotai Co.,Ltd. | Tranche de silicium monocristallin, son procede d'elaboration et procede d'obtention d'une tranche de silicium monocristallin |
| US20020144642A1 (en) * | 2000-12-26 | 2002-10-10 | Hariprasad Sreedharamurthy | Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects |
| JP2003209114A (ja) | 2002-01-10 | 2003-07-25 | Japan Science & Technology Corp | シリコン結晶中の遷移金属不純物のゲッタリング方法 |
| JP4908730B2 (ja) * | 2003-04-21 | 2012-04-04 | 株式会社Ｓｕｍｃｏ | 高抵抗シリコン単結晶の製造方法 |
| JPWO2005073439A1 (ja) * | 2004-02-02 | 2007-09-13 | 信越半導体株式会社 | シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法 |
| JP4345585B2 (ja) * | 2004-06-16 | 2009-10-14 | 信越半導体株式会社 | シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置 |
| DE102007027110A1 (de) | 2007-06-13 | 2008-12-18 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Verpacken von polykristallinem Siliciumbruch |
| JP5751748B2 (ja) * | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | 多結晶シリコン塊群および多結晶シリコン塊群の製造方法 |
| JP6439593B2 (ja) * | 2015-06-02 | 2018-12-19 | 信越半導体株式会社 | 不純物分析方法及びシリコン結晶の評価方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3150539A1 (de) * | 1981-12-21 | 1983-06-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium |
| JPS6055629A (ja) * | 1983-09-07 | 1985-03-30 | Fujitsu Ltd | ミラ−ウェハの製造方法 |
| JPH0226031A (ja) * | 1988-07-14 | 1990-01-29 | Toshiba Ceramics Co Ltd | シリコンウェーハ |
-
1989
- 1989-08-23 JP JP1216569A patent/JPH0380193A/ja active Granted
-
1990
- 1990-08-20 EP EP90309114A patent/EP0419044B1/en not_active Expired - Lifetime
- 1990-08-20 DE DE69013631T patent/DE69013631T2/de not_active Expired - Fee Related
- 1990-08-22 US US07/570,680 patent/US5067989A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5067989A (en) | 1991-11-26 |
| EP0419044B1 (en) | 1994-10-26 |
| EP0419044A1 (en) | 1991-03-27 |
| DE69013631D1 (de) | 1994-12-01 |
| JPH0380193A (ja) | 1991-04-04 |
| JPH0515675B2 (enExample) | 1993-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69902494T2 (de) | Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellter einkristalliner Siliciumwafer | |
| DE69013631T2 (de) | Einkristallsilizium. | |
| EP0829559B1 (de) | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte | |
| DE69120032T2 (de) | Verfahren zur Feststellung der elektrischen Eigenschaften eines Silizium-Monokristalles | |
| DE69900481T2 (de) | Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellte einkristalline Siliciumwafer | |
| EP0328048A2 (de) | Herstellung von Halbleiterscheiben mit verbesserter Kontrolle der Innenstörstellen | |
| DE60210264T2 (de) | Verfahren zur herstellung von silizium einkristall mit verbesserter gate-oxid integrität | |
| DE69508473T2 (de) | Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür | |
| DE112017003644B4 (de) | Verfahren zur Bewertung der Kohlenstoffkonzentration einer Siliciumprobe, Verfahren zur Bewertung eines Herstellungsprozesses für Siliciumwafer, Verfahren zur Herstellung von Siliciumwafern, Verfahren zur Herstellung eines Silicium-Einkristall-Ingots | |
| DE112016002091B4 (de) | Silicium-Epitaxie-Wafer und Verfahren zu dessen Herstellung | |
| EP0590508B1 (de) | Entfernung von Verunreinigungen und Verbesserung der Minoritätsladungsträger-Lebensdauer bei Silicium | |
| EP3555348B1 (de) | Halbleiterscheibe aus einkristallinem silizium und verfahren zur herstellung einer halbleiterscheibe aus einkristallinem silizium | |
| DE112017003436T5 (de) | Einkristalliner, plattenförmiger Siliziumkörper und Verfahren zu dessen Herstellung | |
| DE69020037T2 (de) | Silizium-Einkristall mit sehr kleiner Empfindlichkeit gegen die Bildung oxidationsinduzierter Fehlstellen und Verfahren zu seiner Herstellung. | |
| DE112017003486B4 (de) | Verfahren zum evaluieren und herstellen von siliziumwafern | |
| DE69712955T2 (de) | Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten | |
| DE112015002599B4 (de) | Silicium-Wafer und Verfahren zu dessen Herstellung | |
| DE60205316T2 (de) | Halbleitersubstrat aus Silizium und Verfahren zu ihrer Herstellung | |
| DE112012000607B4 (de) | Verfahren zum Herstellen eines Siliziumsubstrats und Siliziumsubstrat | |
| DE112009000569T5 (de) | Silizium-Einkristall-Wafer, Verfahren zur Herstellung eines Silizium-Einkristalls oder Verfahren zur Herstellung eines Silizium-Einkristall-Wafers, und Halbleiterbauelement | |
| DE3827496C2 (enExample) | ||
| DE112006000816T5 (de) | Produktionsverfahren für Siliziumeinkristall, getemperter Wafer und Produktionsverfahren für getemperten Wafer | |
| DE102004023425B4 (de) | Verfahren zur Feststellung der Cu-Konzentration eines Siliciumsubstrats | |
| EP4018019B1 (de) | Verfahren zur bestimmung von spurenmetallen in silicium | |
| DE102005039116B4 (de) | Verfahren zur Erzeugung eines Siliziumwafers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |