JPH0462175B2 - - Google Patents

Info

Publication number
JPH0462175B2
JPH0462175B2 JP57152295A JP15229582A JPH0462175B2 JP H0462175 B2 JPH0462175 B2 JP H0462175B2 JP 57152295 A JP57152295 A JP 57152295A JP 15229582 A JP15229582 A JP 15229582A JP H0462175 B2 JPH0462175 B2 JP H0462175B2
Authority
JP
Japan
Prior art keywords
region
semiconductor substrate
conductivity type
source
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57152295A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5941871A (ja
Inventor
Mitsuo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP57152295A priority Critical patent/JPS5941871A/ja
Publication of JPS5941871A publication Critical patent/JPS5941871A/ja
Publication of JPH0462175B2 publication Critical patent/JPH0462175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57152295A 1982-08-31 1982-08-31 接合型電界効果半導体装置 Granted JPS5941871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57152295A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57152295A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS5941871A JPS5941871A (ja) 1984-03-08
JPH0462175B2 true JPH0462175B2 (enrdf_load_stackoverflow) 1992-10-05

Family

ID=15537400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57152295A Granted JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS5941871A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805003A (en) * 1987-11-10 1989-02-14 Motorola Inc. GaAs MESFET
JP2538984B2 (ja) * 1988-04-20 1996-10-02 株式会社豊田自動織機製作所 静電誘導形半導体装置
DE19548443A1 (de) * 1995-12-22 1997-06-26 Siemens Ag Halbleiteranordnung zur Strombegrenzung
DE19726678A1 (de) * 1997-06-24 1999-01-07 Siemens Ag Passiver Halbleiterstrombegrenzer
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP4848595B2 (ja) * 2001-05-16 2011-12-28 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP4696444B2 (ja) * 2003-11-14 2011-06-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
CN105830219B (zh) * 2013-12-25 2019-01-01 佳能株式会社 成像装置、成像系统及用于制造成像装置的方法

Also Published As

Publication number Publication date
JPS5941871A (ja) 1984-03-08

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