JPS5941871A - 接合型電界効果半導体装置 - Google Patents

接合型電界効果半導体装置

Info

Publication number
JPS5941871A
JPS5941871A JP57152295A JP15229582A JPS5941871A JP S5941871 A JPS5941871 A JP S5941871A JP 57152295 A JP57152295 A JP 57152295A JP 15229582 A JP15229582 A JP 15229582A JP S5941871 A JPS5941871 A JP S5941871A
Authority
JP
Japan
Prior art keywords
region
gate
substrate
type
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57152295A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0462175B2 (enrdf_load_stackoverflow
Inventor
Mitsuo Kishimoto
岸本　光雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57152295A priority Critical patent/JPS5941871A/ja
Publication of JPS5941871A publication Critical patent/JPS5941871A/ja
Publication of JPH0462175B2 publication Critical patent/JPH0462175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57152295A 1982-08-31 1982-08-31 接合型電界効果半導体装置 Granted JPS5941871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57152295A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57152295A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS5941871A true JPS5941871A (ja) 1984-03-08
JPH0462175B2 JPH0462175B2 (enrdf_load_stackoverflow) 1992-10-05

Family

ID=15537400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57152295A Granted JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS5941871A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805003A (en) * 1987-11-10 1989-02-14 Motorola Inc. GaAs MESFET
JPH01270276A (ja) * 1988-04-20 1989-10-27 Toyota Autom Loom Works Ltd 静電誘導形半導体装置
US6034385A (en) * 1995-12-22 2000-03-07 Siemens Aktiengesellschaft Current-limiting semiconductor configuration
US6232625B1 (en) * 1997-06-24 2001-05-15 Siced Electronics Development Gmbh & Co. Kg Semiconductor configuration and use thereof
JP2002343978A (ja) * 2001-05-16 2002-11-29 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2005150353A (ja) * 2003-11-14 2005-06-09 Denso Corp 炭化珪素半導体装置及びその製造方法
EP2264769A1 (en) * 1998-07-09 2010-12-22 Cree, Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JPWO2015097771A1 (ja) * 2013-12-25 2017-03-23 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805003A (en) * 1987-11-10 1989-02-14 Motorola Inc. GaAs MESFET
JPH01270276A (ja) * 1988-04-20 1989-10-27 Toyota Autom Loom Works Ltd 静電誘導形半導体装置
US6034385A (en) * 1995-12-22 2000-03-07 Siemens Aktiengesellschaft Current-limiting semiconductor configuration
US6232625B1 (en) * 1997-06-24 2001-05-15 Siced Electronics Development Gmbh & Co. Kg Semiconductor configuration and use thereof
EP2264769A1 (en) * 1998-07-09 2010-12-22 Cree, Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP2002343978A (ja) * 2001-05-16 2002-11-29 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2005150353A (ja) * 2003-11-14 2005-06-09 Denso Corp 炭化珪素半導体装置及びその製造方法
US7691694B2 (en) 2003-11-14 2010-04-06 Denso Corporation Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
JPWO2015097771A1 (ja) * 2013-12-25 2017-03-23 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法

Also Published As

Publication number Publication date
JPH0462175B2 (enrdf_load_stackoverflow) 1992-10-05

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