JPS6152592B2 - - Google Patents

Info

Publication number
JPS6152592B2
JPS6152592B2 JP54120080A JP12008079A JPS6152592B2 JP S6152592 B2 JPS6152592 B2 JP S6152592B2 JP 54120080 A JP54120080 A JP 54120080A JP 12008079 A JP12008079 A JP 12008079A JP S6152592 B2 JPS6152592 B2 JP S6152592B2
Authority
JP
Japan
Prior art keywords
region
semiconductor device
type semiconductor
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54120080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645074A (en
Inventor
Juki Shimada
Hitoshi Nagano
Kuniharu Kato
Shusaburo Imai
Kenji Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12008079A priority Critical patent/JPS5645074A/ja
Publication of JPS5645074A publication Critical patent/JPS5645074A/ja
Publication of JPS6152592B2 publication Critical patent/JPS6152592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP12008079A 1979-09-20 1979-09-20 High-pressure-resistance mos type semiconductor device Granted JPS5645074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12008079A JPS5645074A (en) 1979-09-20 1979-09-20 High-pressure-resistance mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12008079A JPS5645074A (en) 1979-09-20 1979-09-20 High-pressure-resistance mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5645074A JPS5645074A (en) 1981-04-24
JPS6152592B2 true JPS6152592B2 (enrdf_load_stackoverflow) 1986-11-13

Family

ID=14777401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12008079A Granted JPS5645074A (en) 1979-09-20 1979-09-20 High-pressure-resistance mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5645074A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547955Y2 (enrdf_load_stackoverflow) * 1985-04-09 1993-12-17
JPH0783121B2 (ja) * 1988-09-02 1995-09-06 三菱電機株式会社 電界効果型半導体装置
JPH02106973A (ja) * 1988-10-17 1990-04-19 Nec Corp 半導体装置
BE1007657A3 (nl) * 1993-10-14 1995-09-05 Philips Electronics Nv Halfgeleiderinrichting met een snelle laterale dmost voorzien van een hoogspanningsaanvoerelektrode.
JP2822961B2 (ja) * 1995-12-14 1998-11-11 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS5645074A (en) 1981-04-24

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