JPH0455323B2 - - Google Patents
Info
- Publication number
- JPH0455323B2 JPH0455323B2 JP58146398A JP14639883A JPH0455323B2 JP H0455323 B2 JPH0455323 B2 JP H0455323B2 JP 58146398 A JP58146398 A JP 58146398A JP 14639883 A JP14639883 A JP 14639883A JP H0455323 B2 JPH0455323 B2 JP H0455323B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- photoresist
- photoresist film
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 14
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- -1 polysiloxane Polymers 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58146398A JPS6038821A (ja) | 1983-08-12 | 1983-08-12 | エッチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58146398A JPS6038821A (ja) | 1983-08-12 | 1983-08-12 | エッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6038821A JPS6038821A (ja) | 1985-02-28 |
JPH0455323B2 true JPH0455323B2 (zh) | 1992-09-03 |
Family
ID=15406797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58146398A Granted JPS6038821A (ja) | 1983-08-12 | 1983-08-12 | エッチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6038821A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097397B2 (en) | 2006-09-20 | 2012-01-17 | Tokyo Ohka Kogyo Co., Ltd. | Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2578930B2 (ja) * | 1988-08-18 | 1997-02-05 | 松下電器産業株式会社 | パターン形成方法 |
WO1993024860A1 (en) * | 1992-06-02 | 1993-12-09 | Mitsubishi Kasei Corporation | Composition for forming anti-reflection film on resist and pattern formation method |
JPH0697065A (ja) * | 1992-09-17 | 1994-04-08 | Mitsubishi Electric Corp | 微細レジストパターンの形成方法 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JP3284056B2 (ja) * | 1995-09-12 | 2002-05-20 | 株式会社東芝 | 基板処理装置及びパターン形成方法 |
JP3851594B2 (ja) | 2002-07-04 | 2006-11-29 | Azエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物およびパターン形成方法 |
WO2005081063A1 (ja) * | 2004-02-20 | 2005-09-01 | Daikin Industries, Ltd. | 液浸リソグラフィーに用いるレジスト積層体 |
JP4355944B2 (ja) | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
JP4697406B2 (ja) | 2004-08-05 | 2011-06-08 | 信越化学工業株式会社 | 高分子化合物,レジスト保護膜材料及びパターン形成方法 |
US8323872B2 (en) | 2005-06-15 | 2012-12-04 | Shin-Etsu Chemical Co., Ltd. | Resist protective coating material and patterning process |
TWI382280B (zh) | 2005-07-27 | 2013-01-11 | Shinetsu Chemical Co | 光阻保護性塗覆材料以及圖形化的方法 |
US7771913B2 (en) | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
US7759047B2 (en) | 2006-05-26 | 2010-07-20 | Shin-Etsu Chemical Co., Ltd. | Resist protective film composition and patterning process |
JP4571598B2 (ja) | 2006-06-27 | 2010-10-27 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
JP4895030B2 (ja) | 2006-10-04 | 2012-03-14 | 信越化学工業株式会社 | 高分子化合物、レジスト保護膜材料、及びパターン形成方法 |
JP5010569B2 (ja) | 2008-01-31 | 2012-08-29 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
JP5131461B2 (ja) | 2008-02-14 | 2013-01-30 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
JP5071658B2 (ja) | 2008-02-14 | 2012-11-14 | 信越化学工業株式会社 | レジスト材料、レジスト保護膜材料、及びパターン形成方法 |
JP5324290B2 (ja) | 2008-04-03 | 2013-10-23 | 東京応化工業株式会社 | 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法 |
JP4650644B2 (ja) | 2008-05-12 | 2011-03-16 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5381298B2 (ja) | 2008-05-12 | 2014-01-08 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
US8431323B2 (en) | 2008-10-30 | 2013-04-30 | Shin-Etsu Chemical Co., Ltd. | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process |
JP4748331B2 (ja) | 2008-12-02 | 2011-08-17 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4822028B2 (ja) | 2008-12-02 | 2011-11-24 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
JP5170456B2 (ja) | 2009-04-16 | 2013-03-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498182A (zh) * | 1972-05-10 | 1974-01-24 | ||
JPS4994267A (zh) * | 1973-01-10 | 1974-09-06 | ||
JPS5293273A (en) * | 1976-01-31 | 1977-08-05 | Nippon Telegr & Teleph Corp <Ntt> | Fine pattern forming method |
JPS533821A (en) * | 1976-07-01 | 1978-01-13 | Fujitsu Ltd | Exposure method |
JPS54111285A (en) * | 1978-02-20 | 1979-08-31 | Nec Corp | Production of semiconductor device |
GB2046463A (en) * | 1979-03-23 | 1980-11-12 | Siemens Ag | Process for the production of structured positive photo-lacquer layers on a substrate |
JPS5812328A (ja) * | 1981-07-16 | 1983-01-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5990927A (ja) * | 1982-11-16 | 1984-05-25 | Toshiba Corp | ホトリソグラフイ法 |
-
1983
- 1983-08-12 JP JP58146398A patent/JPS6038821A/ja active Granted
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498182A (zh) * | 1972-05-10 | 1974-01-24 | ||
JPS4994267A (zh) * | 1973-01-10 | 1974-09-06 | ||
JPS5293273A (en) * | 1976-01-31 | 1977-08-05 | Nippon Telegr & Teleph Corp <Ntt> | Fine pattern forming method |
JPS533821A (en) * | 1976-07-01 | 1978-01-13 | Fujitsu Ltd | Exposure method |
JPS54111285A (en) * | 1978-02-20 | 1979-08-31 | Nec Corp | Production of semiconductor device |
GB2046463A (en) * | 1979-03-23 | 1980-11-12 | Siemens Ag | Process for the production of structured positive photo-lacquer layers on a substrate |
JPS5812328A (ja) * | 1981-07-16 | 1983-01-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5990927A (ja) * | 1982-11-16 | 1984-05-25 | Toshiba Corp | ホトリソグラフイ法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097397B2 (en) | 2006-09-20 | 2012-01-17 | Tokyo Ohka Kogyo Co., Ltd. | Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
Also Published As
Publication number | Publication date |
---|---|
JPS6038821A (ja) | 1985-02-28 |
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