JPH045267B2 - - Google Patents

Info

Publication number
JPH045267B2
JPH045267B2 JP60128068A JP12806885A JPH045267B2 JP H045267 B2 JPH045267 B2 JP H045267B2 JP 60128068 A JP60128068 A JP 60128068A JP 12806885 A JP12806885 A JP 12806885A JP H045267 B2 JPH045267 B2 JP H045267B2
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
corrosion
protective layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60128068A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61287155A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60128068A priority Critical patent/JPS61287155A/ja
Priority to US06/870,399 priority patent/US4821148A/en
Priority to KR1019860004578A priority patent/KR900007303B1/ko
Priority to EP86108142A priority patent/EP0205190B1/en
Priority to DE8686108142T priority patent/DE3686600T2/de
Publication of JPS61287155A publication Critical patent/JPS61287155A/ja
Publication of JPH045267B2 publication Critical patent/JPH045267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
JP60128068A 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法 Granted JPS61287155A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60128068A JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法
US06/870,399 US4821148A (en) 1985-06-14 1986-06-04 Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound
KR1019860004578A KR900007303B1 (ko) 1985-06-14 1986-06-10 수지봉지형 반도체장치
EP86108142A EP0205190B1 (en) 1985-06-14 1986-06-13 Method of producing a resin packaged semiconductor device
DE8686108142T DE3686600T2 (de) 1985-06-14 1986-06-13 Verfahren zum herstellen einer harzumhuellten halbleiteranordnung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128068A JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61287155A JPS61287155A (ja) 1986-12-17
JPH045267B2 true JPH045267B2 (enExample) 1992-01-30

Family

ID=14975658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60128068A Granted JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4821148A (enExample)
EP (1) EP0205190B1 (enExample)
JP (1) JPS61287155A (enExample)
KR (1) KR900007303B1 (enExample)
DE (1) DE3686600T2 (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
US5396104A (en) * 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device
US4916519A (en) * 1989-05-30 1990-04-10 International Business Machines Corporation Semiconductor package
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
US5475920A (en) * 1990-08-01 1995-12-19 Burns; Carmen D. Method of assembling ultra high density integrated circuit packages
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
WO1992003035A1 (en) * 1990-08-01 1992-02-20 Staktek Corporation Ultra high density integrated circuit packages, method and apparatus
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
US5448450A (en) * 1991-08-15 1995-09-05 Staktek Corporation Lead-on-chip integrated circuit apparatus
US5316573A (en) * 1992-03-12 1994-05-31 International Business Machines Corporation Corrosion inhibition with CU-BTA
US5310702A (en) * 1992-03-20 1994-05-10 Kulicke And Soffa Industries, Inc. Method of preventing short-circuiting of bonding wires
US5702985A (en) * 1992-06-26 1997-12-30 Staktek Corporation Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method
US6205654B1 (en) * 1992-12-11 2001-03-27 Staktek Group L.P. Method of manufacturing a surface mount package
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
US5801437A (en) * 1993-03-29 1998-09-01 Staktek Corporation Three-dimensional warp-resistant integrated circuit module method and apparatus
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US5369056A (en) * 1993-03-29 1994-11-29 Staktek Corporation Warp-resistent ultra-thin integrated circuit package fabrication method
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US5820014A (en) 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
KR0165299B1 (ko) * 1994-11-11 1999-03-20 김광호 다층 광 기록 디스크
AU4160096A (en) * 1994-11-15 1996-06-06 Formfactor, Inc. Probe card assembly and kit, and methods of using same
EP0792517B1 (en) * 1994-11-15 2003-10-22 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
GB9425031D0 (en) * 1994-12-09 1995-02-08 Alpha Metals Ltd Printed circuit board manufacture
GB9425030D0 (en) 1994-12-09 1995-02-08 Alpha Metals Ltd Silver plating
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US6025642A (en) * 1995-08-17 2000-02-15 Staktek Corporation Ultra high density integrated circuit packages
KR100215181B1 (ko) * 1995-10-06 1999-08-16 포만 제프리 엘 도전성 은/증합체 복합체의 부식 및 용해 방지구조물
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US6905587B2 (en) 1996-03-22 2005-06-14 Ronald Redline Method for enhancing the solderability of a surface
US6544397B2 (en) 1996-03-22 2003-04-08 Ronald Redline Method for enhancing the solderability of a surface
TW335526B (en) * 1996-07-15 1998-07-01 Matsushita Electron Co Ltd A semiconductor and the manufacturing method
KR100202668B1 (ko) * 1996-07-30 1999-07-01 구본준 크랙 방지를 위한 반도체 패키지와 그 제조방법 및 제조장치
US5773132A (en) * 1997-02-28 1998-06-30 International Business Machines Corporation Protecting copper dielectric interface from delamination
US5945732A (en) 1997-03-12 1999-08-31 Staktek Corporation Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package
US5976964A (en) * 1997-04-22 1999-11-02 Micron Technology, Inc. Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US6600215B1 (en) 1998-04-02 2003-07-29 Micron Technology, Inc. Method and apparatus for coupling a semiconductor die to die terminals
US6177726B1 (en) * 1999-02-11 2001-01-23 Philips Electronics North America Corporation SiO2 wire bond insulation in semiconductor assemblies
USRE45842E1 (en) 1999-02-17 2016-01-12 Ronald Redline Method for enhancing the solderability of a surface
JP3367458B2 (ja) * 1999-03-30 2003-01-14 株式会社デンソー 半導体装置の製造方法
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
US6207551B1 (en) * 1999-08-24 2001-03-27 Conexant Systems, Inc. Method and apparatus using formic acid vapor as reducing agent for copper wirebonding
US6572387B2 (en) 1999-09-24 2003-06-03 Staktek Group, L.P. Flexible circuit connector for stacked chip module
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
US6608763B1 (en) 2000-09-15 2003-08-19 Staktek Group L.P. Stacking system and method
EP1215724B1 (en) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Wire bonded semiconductor device with low capacitance coupling
DE10108695A1 (de) * 2001-02-23 2002-09-05 Varta Geraetebatterie Gmbh Galvanisches Element mit mindestens einer lithiuminterkalierenden Elektrode
US6462408B1 (en) 2001-03-27 2002-10-08 Staktek Group, L.P. Contact member stacking system and method
US7132736B2 (en) * 2001-10-31 2006-11-07 Georgia Tech Research Corporation Devices having compliant wafer-level packages with pillars and methods of fabrication
US6849806B2 (en) * 2001-11-16 2005-02-01 Texas Instruments Incorporated Electrical apparatus having resistance to atmospheric effects and method of manufacture therefor
TWI287282B (en) * 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US6621141B1 (en) 2002-07-22 2003-09-16 Palo Alto Research Center Incorporated Out-of-plane microcoil with ground-plane structure
US20040119172A1 (en) * 2002-12-18 2004-06-24 Downey Susan H. Packaged IC using insulated wire
MY134318A (en) * 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
US6900525B2 (en) * 2003-05-21 2005-05-31 Kyocera America, Inc. Semiconductor package having filler metal of gold/silver/copper alloy
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US7230440B2 (en) * 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
KR101360732B1 (ko) 2007-06-27 2014-02-07 엘지이노텍 주식회사 발광 다이오드 패키지
JPWO2010147187A1 (ja) 2009-06-18 2012-12-06 ローム株式会社 半導体装置
US20130277825A1 (en) * 2012-04-18 2013-10-24 Texas Instruments Incorporated Method for Preventing Corrosion of Copper-Aluminum Intermetallic Compounds
CN105075023B (zh) * 2013-02-18 2017-08-29 株式会社自动网络技术研究所 电连接结构和端子
CN105408998B (zh) 2013-07-03 2018-07-24 罗森伯格高频技术有限及两合公司 裸片封装体所用的涂布焊线和所述涂布焊线的制造方法
DE102015108736A1 (de) * 2015-06-02 2016-12-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2018037639A (ja) * 2016-08-31 2018-03-08 株式会社東芝 半導体パッケージ、及び半導体パッケージの製造方法
JP2020521878A (ja) * 2017-05-26 2020-07-27 ユニバーシティー・オブ・ノース・テキサス Ｃｕワイヤでボンディングしたデバイス組立におけるＡｌボンドパッドの腐食の機構的検討及び防止
DE112020001490T5 (de) * 2019-03-27 2021-12-30 Sumitomo Bakelite Co., Ltd. Harzzusammensetzung zum einkapseln und halbleitervorrichtung
TWI784272B (zh) * 2019-05-31 2022-11-21 美商羅門哈斯電子材料有限公司 抗蝕劑組成物、其製造方法及包含其的製品

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038157B2 (enExample) * 1972-11-28 1975-12-08
JPS50110279A (enExample) * 1974-02-06 1975-08-30
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS5923009B2 (ja) * 1979-06-26 1984-05-30 日本ビクター株式会社 磁気記録媒体
US4327369A (en) * 1979-08-06 1982-04-27 Hi-Tech Industries, Inc. Encapsulating moisture-proof coating
US4572853A (en) * 1980-06-05 1986-02-25 Tokyo Shibaura Denki Kabushiki Kaisha Resin encapsulation type semiconductor device
JPS5769767A (en) * 1980-10-20 1982-04-28 Toshiba Corp Resin sealed type semiconductor device
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
US4486945A (en) * 1981-04-21 1984-12-11 Seiichiro Aigoo Method of manufacturing semiconductor device with plated bump
US4373656A (en) * 1981-07-17 1983-02-15 Western Electric Company, Inc. Method of preserving the solderability of copper
US4415629A (en) * 1982-03-22 1983-11-15 Electric Power Research Institute, Inc. Insulated conductor
JPS58163652A (ja) * 1982-03-25 1983-09-28 トーレ・シリコーン株式会社 連続的な異相構造を有するシリコ−ン１体成形物，およびその製造方法
JPS58166747A (ja) * 1982-03-29 1983-10-01 Toshiba Corp 樹脂封止型半導体装置
DE3278980D1 (en) * 1982-04-30 1988-10-06 Matsushita Electric Industrial Co Ltd Magnetic recording medium
JPS58202556A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 半導体装置
JPS602681A (ja) * 1983-06-16 1985-01-08 Murata Mfg Co Ltd 銅または銅合金の防錆処理方法

Also Published As

Publication number Publication date
KR900007303B1 (ko) 1990-10-08
DE3686600T2 (de) 1993-04-15
EP0205190A2 (en) 1986-12-17
KR870000752A (ko) 1987-02-20
EP0205190A3 (en) 1987-07-29
JPS61287155A (ja) 1986-12-17
EP0205190B1 (en) 1992-09-02
US4821148A (en) 1989-04-11
DE3686600D1 (de) 1992-10-08

Similar Documents

Publication Publication Date Title
JPH045267B2 (enExample)
CA1172525A (en) Copper-containing articles with a corrosion inhibitor coating and method of producing the coating
KR100446715B1 (ko) 반도체 장치의 제조방법
JP2007524996A (ja) 銅コンタクトを有する集積回路ダイおよび該集積回路ダイのための方法
US8012886B2 (en) Leadframe treatment for enhancing adhesion of encapsulant thereto
JPH11195628A5 (ja) 半導体装置の製造方法
US10867895B2 (en) Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same
JPH0653262A (ja) 半導体デバイス等の金属表面からプラスチックのばり等を電解除去する方法及びその方法に使用する溶液組成物
KR19980080039A (ko) 구리 또는 구리합금의 변색방지액 및 변색방지방법
Chyan et al. Mechanistic Investigation and Prevention of Al Bond Pad Corrosion in Cu Wire-bonded Device Assembly
US4773940A (en) Lead frame preparation for solder dipping
JPS6310547A (ja) 半導体装置
CN114086169A (zh) 锡面保护剂
JPH0478173B2 (enExample)
JPS5815938B2 (ja) ハンドウタイソウチノ アルミニウムハイセンノ ホゴマクケイセイホウ
US20110171367A1 (en) Method for improving the corrosion resistance of an electronic component, particularly of conductors of a printed circuit board
WO2018218217A2 (en) Mechanistic investigation and prevention of al bond pad corrosion in cu wire-bonded device assembly
US6165278A (en) Removing thermal grease from electronic cards
JPS59188928A (ja) 半導体装置の外装処理方法
JPS63291443A (ja) 半導体装置の製造方法
JPS6038849A (ja) 半導体装置およびその製造方法
JPH04151858A (ja) ハイブリツドｉｃ及び半導体封止用セラミツクキヤツプ
JPS6010652A (ja) 半導体装置
JPS5847853B2 (ja) デンシブヒンドウタイノボウシヨクホウホウ
JPH011243A (ja) リ−ドワイヤの製造方法