KR900007303B1 - 수지봉지형 반도체장치 - Google Patents

수지봉지형 반도체장치 Download PDF

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Publication number
KR900007303B1
KR900007303B1 KR1019860004578A KR860004578A KR900007303B1 KR 900007303 B1 KR900007303 B1 KR 900007303B1 KR 1019860004578 A KR1019860004578 A KR 1019860004578A KR 860004578 A KR860004578 A KR 860004578A KR 900007303 B1 KR900007303 B1 KR 900007303B1
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KR
South Korea
Prior art keywords
semiconductor device
resin
electrode
compound
moisture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860004578A
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English (en)
Korean (ko)
Other versions
KR870000752A (ko
Inventor
시로오 고바야시
마사히꼬 이또오
아끼라 미나또
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR870000752A publication Critical patent/KR870000752A/ko
Application granted granted Critical
Publication of KR900007303B1 publication Critical patent/KR900007303B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
KR1019860004578A 1985-06-14 1986-06-10 수지봉지형 반도체장치 Expired KR900007303B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-128068 1985-06-14
JP128068 1985-06-14
JP60128068A JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870000752A KR870000752A (ko) 1987-02-20
KR900007303B1 true KR900007303B1 (ko) 1990-10-08

Family

ID=14975658

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004578A Expired KR900007303B1 (ko) 1985-06-14 1986-06-10 수지봉지형 반도체장치

Country Status (5)

Country Link
US (1) US4821148A (enExample)
EP (1) EP0205190B1 (enExample)
JP (1) JPS61287155A (enExample)
KR (1) KR900007303B1 (enExample)
DE (1) DE3686600T2 (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
DE69016315T2 (de) * 1989-03-28 1995-08-17 Nippon Steel Corp Harzbeschichteter verbindungsdraht, verfahren zur herstellung und halbleiteranordnung.
US4916519A (en) * 1989-05-30 1990-04-10 International Business Machines Corporation Semiconductor package
US5446620A (en) 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
EP0509065A1 (en) * 1990-08-01 1992-10-21 Staktek Corporation Ultra high density integrated circuit packages, method and apparatus
US5475920A (en) * 1990-08-01 1995-12-19 Burns; Carmen D. Method of assembling ultra high density integrated circuit packages
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
US5448450A (en) * 1991-08-15 1995-09-05 Staktek Corporation Lead-on-chip integrated circuit apparatus
US5316573A (en) * 1992-03-12 1994-05-31 International Business Machines Corporation Corrosion inhibition with CU-BTA
US5310702A (en) * 1992-03-20 1994-05-10 Kulicke And Soffa Industries, Inc. Method of preventing short-circuiting of bonding wires
US5702985A (en) * 1992-06-26 1997-12-30 Staktek Corporation Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method
US6205654B1 (en) 1992-12-11 2001-03-27 Staktek Group L.P. Method of manufacturing a surface mount package
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US5369056A (en) * 1993-03-29 1994-11-29 Staktek Corporation Warp-resistent ultra-thin integrated circuit package fabrication method
US5801437A (en) * 1993-03-29 1998-09-01 Staktek Corporation Three-dimensional warp-resistant integrated circuit module method and apparatus
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US5820014A (en) 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
KR0165299B1 (ko) * 1994-11-11 1999-03-20 김광호 다층 광 기록 디스크
EP1198001A3 (en) * 1994-11-15 2008-07-23 FormFactor, Inc. Method of testing and mounting devices using a resilient contact structure
EP0792517B1 (en) * 1994-11-15 2003-10-22 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
GB9425031D0 (en) * 1994-12-09 1995-02-08 Alpha Metals Ltd Printed circuit board manufacture
GB9425030D0 (en) 1994-12-09 1995-02-08 Alpha Metals Ltd Silver plating
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US6025642A (en) * 1995-08-17 2000-02-15 Staktek Corporation Ultra high density integrated circuit packages
KR100215181B1 (ko) * 1995-10-06 1999-08-16 포만 제프리 엘 도전성 은/증합체 복합체의 부식 및 용해 방지구조물
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US6544397B2 (en) 1996-03-22 2003-04-08 Ronald Redline Method for enhancing the solderability of a surface
US6905587B2 (en) 1996-03-22 2005-06-14 Ronald Redline Method for enhancing the solderability of a surface
TW335526B (en) * 1996-07-15 1998-07-01 Matsushita Electron Co Ltd A semiconductor and the manufacturing method
KR100202668B1 (ko) * 1996-07-30 1999-07-01 구본준 크랙 방지를 위한 반도체 패키지와 그 제조방법 및 제조장치
US5773132A (en) * 1997-02-28 1998-06-30 International Business Machines Corporation Protecting copper dielectric interface from delamination
US5945732A (en) * 1997-03-12 1999-08-31 Staktek Corporation Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package
US5976964A (en) 1997-04-22 1999-11-02 Micron Technology, Inc. Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US6600215B1 (en) 1998-04-02 2003-07-29 Micron Technology, Inc. Method and apparatus for coupling a semiconductor die to die terminals
US6177726B1 (en) * 1999-02-11 2001-01-23 Philips Electronics North America Corporation SiO2 wire bond insulation in semiconductor assemblies
USRE45842E1 (en) 1999-02-17 2016-01-12 Ronald Redline Method for enhancing the solderability of a surface
JP3367458B2 (ja) * 1999-03-30 2003-01-14 株式会社デンソー 半導体装置の製造方法
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
US6207551B1 (en) * 1999-08-24 2001-03-27 Conexant Systems, Inc. Method and apparatus using formic acid vapor as reducing agent for copper wirebonding
US6572387B2 (en) 1999-09-24 2003-06-03 Staktek Group, L.P. Flexible circuit connector for stacked chip module
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
US6608763B1 (en) 2000-09-15 2003-08-19 Staktek Group L.P. Stacking system and method
EP1215724B1 (en) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Wire bonded semiconductor device with low capacitance coupling
DE10108695A1 (de) * 2001-02-23 2002-09-05 Varta Geraetebatterie Gmbh Galvanisches Element mit mindestens einer lithiuminterkalierenden Elektrode
US6462408B1 (en) * 2001-03-27 2002-10-08 Staktek Group, L.P. Contact member stacking system and method
US7132736B2 (en) * 2001-10-31 2006-11-07 Georgia Tech Research Corporation Devices having compliant wafer-level packages with pillars and methods of fabrication
US6849806B2 (en) * 2001-11-16 2005-02-01 Texas Instruments Incorporated Electrical apparatus having resistance to atmospheric effects and method of manufacture therefor
TWI287282B (en) * 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US6621141B1 (en) 2002-07-22 2003-09-16 Palo Alto Research Center Incorporated Out-of-plane microcoil with ground-plane structure
US20040119172A1 (en) * 2002-12-18 2004-06-24 Downey Susan H. Packaged IC using insulated wire
MY134318A (en) * 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
US6900525B2 (en) * 2003-05-21 2005-05-31 Kyocera America, Inc. Semiconductor package having filler metal of gold/silver/copper alloy
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
US7230440B2 (en) 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
KR101360732B1 (ko) 2007-06-27 2014-02-07 엘지이노텍 주식회사 발광 다이오드 패키지
CN105006462B (zh) * 2009-06-18 2019-03-01 罗姆股份有限公司 半导体装置
US20130277825A1 (en) * 2012-04-18 2013-10-24 Texas Instruments Incorporated Method for Preventing Corrosion of Copper-Aluminum Intermetallic Compounds
DE112014000872B4 (de) * 2013-02-18 2023-07-20 Autonetworks Technologies, Ltd. Elektrische Verbindungsstruktur und Anschluss
JP6730182B2 (ja) * 2013-07-03 2020-07-29 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー ダイパッケージ用の被覆されたボンドワイヤおよび被覆されたボンドワイヤの製造方法
DE102015108736A1 (de) * 2015-06-02 2016-12-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2018037639A (ja) * 2016-08-31 2018-03-08 株式会社東芝 半導体パッケージ、及び半導体パッケージの製造方法
CN110891616A (zh) * 2017-05-26 2020-03-17 北德克萨斯大学 Cu线接合器件组件中的al接合焊盘腐蚀的机制调查和预防
JP6992914B2 (ja) * 2019-03-27 2022-01-13 住友ベークライト株式会社 封止用樹脂組成物および半導体装置
TWI784272B (zh) * 2019-05-31 2022-11-21 美商羅門哈斯電子材料有限公司 抗蝕劑組成物、其製造方法及包含其的製品

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038157B2 (enExample) * 1972-11-28 1975-12-08
JPS50110279A (enExample) * 1974-02-06 1975-08-30
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS5923009B2 (ja) * 1979-06-26 1984-05-30 日本ビクター株式会社 磁気記録媒体
US4327369A (en) * 1979-08-06 1982-04-27 Hi-Tech Industries, Inc. Encapsulating moisture-proof coating
US4572853A (en) * 1980-06-05 1986-02-25 Tokyo Shibaura Denki Kabushiki Kaisha Resin encapsulation type semiconductor device
JPS5769767A (en) * 1980-10-20 1982-04-28 Toshiba Corp Resin sealed type semiconductor device
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
EP0076856A4 (en) * 1981-04-21 1984-03-01 Seiichiro Aigoo METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH A PROJECTED PLATED ELECTRODE.
US4373656A (en) * 1981-07-17 1983-02-15 Western Electric Company, Inc. Method of preserving the solderability of copper
US4415629A (en) * 1982-03-22 1983-11-15 Electric Power Research Institute, Inc. Insulated conductor
JPS58163652A (ja) * 1982-03-25 1983-09-28 トーレ・シリコーン株式会社 連続的な異相構造を有するシリコ−ン1体成形物,およびその製造方法
JPS58166747A (ja) * 1982-03-29 1983-10-01 Toshiba Corp 樹脂封止型半導体装置
EP0093194B1 (en) * 1982-04-30 1988-08-31 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium
JPS58202556A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 半導体装置
JPS602681A (ja) * 1983-06-16 1985-01-08 Murata Mfg Co Ltd 銅または銅合金の防錆処理方法

Also Published As

Publication number Publication date
KR870000752A (ko) 1987-02-20
DE3686600T2 (de) 1993-04-15
EP0205190B1 (en) 1992-09-02
JPS61287155A (ja) 1986-12-17
EP0205190A3 (en) 1987-07-29
DE3686600D1 (de) 1992-10-08
EP0205190A2 (en) 1986-12-17
US4821148A (en) 1989-04-11
JPH045267B2 (enExample) 1992-01-30

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