KR870000752A - 수지봉지형 반도체장치 - Google Patents

수지봉지형 반도체장치 Download PDF

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Publication number
KR870000752A
KR870000752A KR1019860004578A KR860004578A KR870000752A KR 870000752 A KR870000752 A KR 870000752A KR 1019860004578 A KR1019860004578 A KR 1019860004578A KR 860004578 A KR860004578 A KR 860004578A KR 870000752 A KR870000752 A KR 870000752A
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South Korea
Prior art keywords
semiconductor device
resin
encapsulated semiconductor
organic compound
protective layers
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KR1019860004578A
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English (en)
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KR900007303B1 (ko
Inventor
시로오 고바야시
마사히꼬 이또오
아끼라 미나또
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR870000752A publication Critical patent/KR870000752A/ko
Application granted granted Critical
Publication of KR900007303B1 publication Critical patent/KR900007303B1/ko

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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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Abstract

내용 없음.

Description

수지봉지형 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 본원 발명에 의한 반도체장치의 일실시예를 나타낸 단면도.

Claims (18)

  1. 반도체소자(1) 및 이것에 대한 전기적접속부재(3,4,5)와 표면에 보호층(6,7,8)을 형성한 다음 수지(9)로 양자(1,3,4,5)를 봉지하여 이루어진 수지봉지형 반도체장치에 있어서, 상기 보호층(6,7,8)을 금속-유기물의 화합물로 구성한 것을 특징으로 하는 수지봉형지 반도체장치.
  2. 제1항에 있어서, 상기 금속-유기물화합물이 상기 보호층(6,7,8)을 형성해야 할 표면을 구성하고 있는 유기물과 금속의 반응생성뭍인 것을 특징으로 하는 수지봉지형 반도체장치.
  3. 제2항에 있어서, 상기 유기물이 상기 금속의 반응생성물로서 물에 난용성의 화합물을 형성하는 물질인 것을 특징으로 하는 수지붕지형 반도체장치.
  4. 제2항에 있어서, 상기 반응생성뭍의 형성이 상기 보호층(6,7,8)을 형성해야 할 표면에 대한 상기 유기물을 용해한 비수용매의 접촉에 의해 행해지고 있는 것을 특징으로 하는 수지봉지형 반도체장치.
  5. 제3항에 있어서, 상기 유기물이 트리아졸류, 안식향산나트륨, 아젤라인산, 퀴날딘산, 루베안산, 쿠프페론 중에서 선택한 것의 하나인 것을 특징으로 하는 수지봉지형 반도체장치.
  6. 제5항에 있어서, 반도체장치를 상기 유기화합물을 용해한 알코올용액에 담그는 것을 특징으로 하는 수지봉지형 반도체장치.
  7. 제6항에 있어서, 상기 알코올이 에틸알코올인 것을 특징으로 하는 수지봉지형 반도체장치.
  8. 제5항에 있어서, 상기 유기화합물이 트리아졸인 것을 특징으로 행하는 수지봉지형 반도체장치.
  9. 리이드프레임(2) 위에 장착된 실리콘칩(1)과 리이드프레임(2) 위의 Ag전극(4)과, 실리콘칩(1) 위의 Al전극(5)과, Ag전극(4), Al전극(5)을 연결하는 Cu와이어(3) 위에 보호층(6,7,8)을 형성하며, 수지(9)로 (1,3,4,5)를 봉지함으로써 얻어지는 수지봉지형 반도체장치에 있어서, 상기 보호층(6,7,8)은 Ag-유기화합물, Al-유기화합물 및 Cu-유기화합물로 이루어지는 것을 특징으로 하는 수지봉지형 반도체장치.
  10. 제9항에 있어서, 상기 화합물이 유기화합물과 Ag,Al 및 Cu와의 반응생성물이며, 그 표면에 상기 보호층(6,7,8)을 형성하는 것을 특징으로 하는 수지봉지형 반도체장치.
  11. 제10항에 있어서, 상기 유기화합물이 Ag,Al 및 Cu와의 반응생성물로서 물에 난용성의 화합물을 형성하는 물질인 것을 특징으로 하는 수지봉지형 반도체장치.
  12. 제10항에 있어서, 상기 유기화합물이 트리아졸류, 안식향산나트륨, 아젤라인산, 퀴날딘산, 루베안산, 쿠프페론 중에서 선택한 것의 하나인 것을 특징으로 하는 수지봉지형 반도체장치.
  13. 제12항에 있어서, 반도체장치를 상기 유기화합물을 용해한 알코올용액에 담그는 것을 특징으로 하는 수지봉지형 반도체장치.
  14. 제13항에 있어서, 상기 알코올이 에틸알코올인 것을 특징으로 하는 수지봉지형 반도체장치.
  15. 제11항에 있어서, 상기 유기화합물이 트리아졸인 것을 특징으로 하는 수지봉지형 반도체장치.
  16. 제14항에 있어서, 상기 트리아졸이 벤조트리아졸인 것을 특징으로 하는 수지봉지형 반도체장치.
  17. 제16항에 있어서, 반도체장치를 벤조트리아졸을 용해한 에틸알코오로용액에 담그는 것을 특징으로 하는 수지봉지형 반도체장치.
  18. 제17항에 있어서, 상기 보호층(6,7,8)은 Ag-벤조트리아졸막(6), Al- 벤조트리아졸막(8), 및 Cu-벤조트리아졸막(7)인 것을 특징으로 하는 수지봉지형 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004578A 1985-06-14 1986-06-10 수지봉지형 반도체장치 KR900007303B1 (ko)

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JP60128068A JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法
JP128068 1985-06-14
JP60-128068 1985-06-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138006A (ko) * 2019-05-31 2020-12-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 레지스트 조성물, 이의 제조 방법 및 이를 함유하는 물품

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DE3686600D1 (de) 1992-10-08
EP0205190A2 (en) 1986-12-17
EP0205190A3 (en) 1987-07-29
DE3686600T2 (de) 1993-04-15
KR900007303B1 (ko) 1990-10-08
EP0205190B1 (en) 1992-09-02
JPS61287155A (ja) 1986-12-17
JPH045267B2 (ko) 1992-01-30
US4821148A (en) 1989-04-11

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