US5104734A - Method for improving adhesion between a polyimide layer and a metal and the article obtained - Google Patents
Method for improving adhesion between a polyimide layer and a metal and the article obtained Download PDFInfo
- Publication number
- US5104734A US5104734A US07/201,989 US20198988A US5104734A US 5104734 A US5104734 A US 5104734A US 20198988 A US20198988 A US 20198988A US 5104734 A US5104734 A US 5104734A
- Authority
- US
- United States
- Prior art keywords
- metal
- layer
- benzotriazole
- copper
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 78
- 239000002184 metal Substances 0.000 title claims abstract description 78
- 229920001721 polyimide Polymers 0.000 title claims abstract description 49
- 239000004642 Polyimide Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 24
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000012964 benzotriazole Substances 0.000 claims abstract description 51
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- UCFCTSYWEPBANH-UHFFFAOYSA-N copper benzotriazol-1-ide Chemical compound [Cu+2].C1=CC=C2[N-]N=NC2=C1.C1=CC=C2[N-]N=NC2=C1 UCFCTSYWEPBANH-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- -1 aliphatic hydrocarbon radicals Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920002160 Celluloid Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HRUHPILBKCOLEY-UHFFFAOYSA-N 2h-benzotriazole;gold Chemical compound [Au].C1=CC=CC2=NNN=C21 HRUHPILBKCOLEY-UHFFFAOYSA-N 0.000 description 1
- IBWXIFXUDGADCV-UHFFFAOYSA-N 2h-benzotriazole;silver Chemical compound [Ag].C1=CC=C2NN=NC2=C1 IBWXIFXUDGADCV-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 101150035983 str1 gene Proteins 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Definitions
- the present invention is concerned with a method for enhancing the adhesion between a polyimide layer and a metal.
- the present invention is concerned with improving the adhesion between a polyimide layer and copper, silver, or gold.
- the present invention is especially advantageous for the formation of conducting lines on a polyimide substrate for use in carriers for mounting integrated circuit chips.
- Polyimides are commonly employed in the semiconductor and packaging industry.
- polyimide films are often coated onto substrates.
- one configuration employs an insulating substrate of a ceramic material onto which is deposited a pattern of metallic conductors.
- the conductors are three layers of metal being a layer of chromium, followed by a layer of copper, followed by an overlying layer of chromium.
- a layer or film of a polyimide On top of the metallized ceramic substrate is placed a layer or film of a polyimide, and on top of the polyimide a second layer of a pattern of conductors is provided.
- the metal contacting the polyimide on the second or subsequent layers can be, for instance, copper as disclosed in U.S. Pat. No. 4,386,116 to Nair, et al. and assigned to International Business Machines Corporation, the assignee of the present application, disclosure of which is incorporated herein by reference.
- the present invention improves the adhesion at the interface of a polyimide layer and a metal such as copper, silver, or gold.
- the adhesion between a polyimide layer and metal is enhanced by providing a layer of a metal benzotriazole adjoining a polyamic acid layer.
- the metal of the benzotriazole is copper, silver, or gold.
- a layer of metal is then provided adjoining the layer of the metal benzotriazole.
- the present invention is concerned with an article that comprises a polyimide layer and a layer of a metal benzotriazole above the polyimide layer.
- the metal of the metal benzotriazole is copper, silver, or gold.
- a layer of metal adjoining the metal benzotriazole layer is provided.
- the process of the present invention is concerned with providing a layer of a metal benzotriazole adjoining a polyamic acid layer.
- the metal benzotriazole can be copper benzotriazole, silver benzotriazole, or gold benzotriazole and preferably is copper benzotriazole. If desired, mixtures of these benzotriazoles can be employed.
- the benzotriazole layer can be provided by applying the metal benzotriazole to the polyamic acid layer as such, preferably in a solution in an organic solvent, or preferably can be provided, for instance, by coating a layer of the polyamic acid with a thin layer of the metal; followed by coating with a solution of the benzotriazole in an organic solvent such as an alcohol, preferably methanol or ethanol, or an aromatic organic solvent such as benzene, toluene, or xylene, which, in turn, will react with the metal to form the metal benzotriazole layer.
- the benzotriazole layer can be provided by first coating with the benzotriazole solution, followed by the metal layer.
- the metal benzotriazole layer can be provided by simultaneously applying both the thin layer of metal and benzotriazole to the substrate.
- the metal such as copper, silver, or gold, is applied as a thin film of about 100 to about 800 angstroms such as by sputter coating or by evaporation techniques that are well-known in the art.
- copper can be applied by evaporation, whereby the substrate onto which the evaporation occurs is about 220° C. to about 280° C.
- the benzotriazole is usually employed as a 0.25% to about a 1% solution in the organic solvent and it can be applied by spraying or immersion coating technique.
- the amount is normally such as to provide a very thin layer such as about 200 to about 600 angstroms.
- the polyamic acid employed is a precursor for the formation of the polyimide.
- Polyamic acids are commercially available such as from DuPont under the trade designation "Pyralin”.
- Such polyimide precursors come in many grades including those available Pyralin polyimide precursors from DuPont under the further trade designations PI-2555, PI-2545, PI-2560, PI-5878, PIH-61454, and PI-2540.
- These particular materials are all pyromelletic dianhydride-oxydianaline (PMDA-ODA) polyimide precursors.
- the polyimide precursors are converted subsequent to the step of providing the layer of the metal benzotriazole adjoining the polyamic acid to the polyimide such as by heating to elevated temperatures such as at least about 110° C. and preferably at least about 360° C. This thermal cure is usually for at least about 15 minutes and preferably at least about 30 minutes.
- the polyimides employed in accordance with the present invention include unmodified polyimides such as polyester imides, polyamide-imide-esters, polyamide-imides, polysiloxane-imides, as well as other mixed polyimides. Such are well-known in the prior art and need not be described in any great detail.
- the polyimides include the following recurring unit: ##STR1## where n is an integer representing the number of repeating units to provide a molecular weight usually about 10,000 to about 100,000.
- R is at least one tetravalent organic radical selected from the group consisting of: ##STR2##
- R 2 being selected from the group consisting of divalent aliphatic hydrocarbon radicals having from 1 to 4 carbon atoms and carbonyl, oxy, sulfo, hexafluoroisopropylidene and sulfonyl radicals and in which R 1 is at least one divalent radical selected from the group consisting of: ##STR3## in which R 3 is a divalent organic radical selected from the group consisting of R 2 , silicon, and amino radicals.
- Polymers containing two or more of the R and/or R 1 radicals, especially multiple series of R 1 containing amido radicals, can be used.
- the polyamic acid has already been converted to a polyimide prior to the formation of the metal benzotriazole, it is preferable that only a thin layer such as about 50 angstroms to about 200 angstroms of the polyimide can be converted back to a polyamic acid such as by conversion in an aqueous alkali metal hydroxide solution usually less than about 50% concentration and preferably about 10% concentration by weight. The conversion generally takes from about 5 seconds to about 2 minutes and is carried out at normal room temperatures.
- the process of the present invention further includes providing a layer of a metal adjoining the metal benzotriazole layer.
- the metal layer is copper, silver, or gold and most preferably is copper.
- the metal layer is of the same metal as present in the metal benzotriazole.
- the metal layer can be provided such as by electroplating, electroless plating, or evaporation up to the desired thickness of the material. For circuitry, usually about 0.3 mils is quite adequate.
- the structure provided by the present invention can, for instance, be present on an underlying rigid support such as a ceramic substrate.
- the present invention is not only applicable to structures whereby the metal benzotriazole is present on top of a polyimide layer with a metal layer on top of the metal benzotriazole, but also those structures where the metal benzotriazole is atop a metal underlying layer and the polyimide is above the metal benzotriazole.
- Polyimide 5878 (PMDA-ODA) substrate is immersed in a 20% aqueous sodium hydroxide solution for about 30 seconds, followed by two deionized water rinses for about 5 minutes each.
- the resultant sodium salt of polyamic acid is neutralized with 10% sulfuric acid.
- the polyimide substrate which now contains a thin layer of polyamic acid has a layer of copper of about 400 angstroms evaporated on the polyamic acid layer at about 260° C.
- the substrate is then immersed in about a 0.25% benzotriazole solution in 25% ethanol-water solvent for about 2 hours.
- the sample is dried and a copper film of about 800 angstroms is formed thereon by evaporation at about 260° C.
- a layer of about 80,000 angstroms of copper is evaporated thereon, followed by about 800 angstroms of chromium evaporated at about 350° C.
- the composite is subjected to a 90° tensile pull test with the results being about 16.8 grams/mm to about 25.1 grams/mm.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (22)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/201,989 US5104734A (en) | 1988-06-03 | 1988-06-03 | Method for improving adhesion between a polyimide layer and a metal and the article obtained |
JP1055263A JPH0639144B2 (en) | 1988-06-03 | 1989-03-09 | Method to enhance adhesion between polyimide layer and metal |
EP89108670A EP0344504B1 (en) | 1988-06-03 | 1989-05-13 | Article comprising a polyimide and a metal layer and methods of making such articles |
DE68914033T DE68914033T2 (en) | 1988-06-03 | 1989-05-13 | Articles with a polyimide and a metal layer and method for producing such articles. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/201,989 US5104734A (en) | 1988-06-03 | 1988-06-03 | Method for improving adhesion between a polyimide layer and a metal and the article obtained |
Publications (1)
Publication Number | Publication Date |
---|---|
US5104734A true US5104734A (en) | 1992-04-14 |
Family
ID=22748118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/201,989 Expired - Fee Related US5104734A (en) | 1988-06-03 | 1988-06-03 | Method for improving adhesion between a polyimide layer and a metal and the article obtained |
Country Status (4)
Country | Link |
---|---|
US (1) | US5104734A (en) |
EP (1) | EP0344504B1 (en) |
JP (1) | JPH0639144B2 (en) |
DE (1) | DE68914033T2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372848A (en) * | 1992-12-24 | 1994-12-13 | International Business Machines Corporation | Process for creating organic polymeric substrate with copper |
US5773132A (en) * | 1997-02-28 | 1998-06-30 | International Business Machines Corporation | Protecting copper dielectric interface from delamination |
US5861192A (en) * | 1995-08-03 | 1999-01-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Method of improving adhesive property of polyimide film and polymidefilm having improved adhesive property |
US5960251A (en) * | 1996-04-18 | 1999-09-28 | International Business Machines Corporation | Organic-metallic composite coating for copper surface protection |
CN100355938C (en) * | 2005-11-17 | 2007-12-19 | 上海交通大学 | Laser induced selective chemical plating process for polyimide film |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5326643A (en) * | 1991-10-07 | 1994-07-05 | International Business Machines Corporation | Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109052A (en) * | 1977-05-12 | 1978-08-22 | E. I. Du Pont De Nemours And Company | Electroconductive transparency |
US4386116A (en) * | 1981-12-24 | 1983-05-31 | International Business Machines Corporation | Process for making multilayer integrated circuit substrate |
US4508766A (en) * | 1982-04-30 | 1985-04-02 | Ube Industries, Ltd. | Process for producing aromatic imide polymer laminate material |
US4517254A (en) * | 1981-12-11 | 1985-05-14 | Schering Aktiengesellschaft | Adhesive metallization of polyimide |
US4526807A (en) * | 1984-04-27 | 1985-07-02 | General Electric Company | Method for deposition of elemental metals and metalloids on substrates |
US4598022A (en) * | 1983-11-22 | 1986-07-01 | Olin Corporation | One-step plasma treatment of copper foils to increase their laminate adhesion |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2638799C3 (en) * | 1976-08-27 | 1981-12-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Process for improving the adhesion of metallic conductor tracks to polyimide layers in integrated circuits |
JPS617654A (en) * | 1984-06-22 | 1986-01-14 | Furukawa Electric Co Ltd:The | Manufacture of resin molded semiconductor |
JP2605010B2 (en) * | 1985-01-11 | 1997-04-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Method of attaching metal to organic substrate |
JPS61287155A (en) * | 1985-06-14 | 1986-12-17 | Hitachi Ltd | Semiconductor device |
-
1988
- 1988-06-03 US US07/201,989 patent/US5104734A/en not_active Expired - Fee Related
-
1989
- 1989-03-09 JP JP1055263A patent/JPH0639144B2/en not_active Expired - Lifetime
- 1989-05-13 EP EP89108670A patent/EP0344504B1/en not_active Expired - Lifetime
- 1989-05-13 DE DE68914033T patent/DE68914033T2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109052A (en) * | 1977-05-12 | 1978-08-22 | E. I. Du Pont De Nemours And Company | Electroconductive transparency |
US4517254A (en) * | 1981-12-11 | 1985-05-14 | Schering Aktiengesellschaft | Adhesive metallization of polyimide |
US4386116A (en) * | 1981-12-24 | 1983-05-31 | International Business Machines Corporation | Process for making multilayer integrated circuit substrate |
US4508766A (en) * | 1982-04-30 | 1985-04-02 | Ube Industries, Ltd. | Process for producing aromatic imide polymer laminate material |
US4598022A (en) * | 1983-11-22 | 1986-07-01 | Olin Corporation | One-step plasma treatment of copper foils to increase their laminate adhesion |
US4526807A (en) * | 1984-04-27 | 1985-07-02 | General Electric Company | Method for deposition of elemental metals and metalloids on substrates |
Non-Patent Citations (2)
Title |
---|
Khor, et al., "Additive Selection Criteria for Metal-Doped Polyimides", Journal of Polymer Science: Part C: Polymer Letters, vol. 25, 471-475 (1987). |
Khor, et al., Additive Selection Criteria for Metal Doped Polyimides , Journal of Polymer Science: Part C: Polymer Letters, vol. 25, 471 475 (1987). * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372848A (en) * | 1992-12-24 | 1994-12-13 | International Business Machines Corporation | Process for creating organic polymeric substrate with copper |
US5861192A (en) * | 1995-08-03 | 1999-01-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Method of improving adhesive property of polyimide film and polymidefilm having improved adhesive property |
US5960251A (en) * | 1996-04-18 | 1999-09-28 | International Business Machines Corporation | Organic-metallic composite coating for copper surface protection |
US5773132A (en) * | 1997-02-28 | 1998-06-30 | International Business Machines Corporation | Protecting copper dielectric interface from delamination |
CN100355938C (en) * | 2005-11-17 | 2007-12-19 | 上海交通大学 | Laser induced selective chemical plating process for polyimide film |
Also Published As
Publication number | Publication date |
---|---|
DE68914033D1 (en) | 1994-04-28 |
EP0344504A2 (en) | 1989-12-06 |
EP0344504B1 (en) | 1994-03-23 |
JPH0639144B2 (en) | 1994-05-25 |
DE68914033T2 (en) | 1994-10-20 |
EP0344504A3 (en) | 1991-05-02 |
JPH01319941A (en) | 1989-12-26 |
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